BT139-500E thru BT139-800E ® Pb BT139-500E thru BT139-800E Pb Free Plating Product SENSITIVE & STANDARD(16A SCRs) 2 VDRM ≤ 500V (BT139-500E) VDRM ≤ 600 V (BT139-600E) VDRM ≤ 800 V (BT139-800E) IT(RMS) ≤ 16 A 1 : T1 2 : T2 3:G Applications: NoteA Motor control 3 1 Industrial and domestic lighting Heating Static switching NoteA: Features Blocking voltage to 800 V 1:main terminal1 (T1) On-state RMS current to 16 A 2:main terminal2 (T2) Ultra low gate trigger current 3:gate (G) NoteA ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings 3 12 Unit BT139-500E BT139-600E BT139-800E VDRM VRRM IT(RMS) ITSM Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current Non-repetitive peak on-state current PGM Peak gate power PG(AV) Average gate power Tstg Storage temperature range Operating junction temperature Tj 500 600 800 V 500 600 800 16 A 140 A 5 W 0.5 W -45 to +150 °C 110 °C THERMAL CHARACTERISTICS Symbol R∂j-mb R∂JA Ratings Thermal resistance junction to mounting base Thermal resistance junction to ambient Rev.02 © 2006 Thinki Semiconductor Co.,Ltd. Value Unit ≤ 1.2 ≤ 60 °C/W Page 1/2 http://www.thinkisemi.com/ BT139-500E thru BT139-800E ® ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDRM Ratings Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IGT Gate trigger current VGT Gate trigger voltage IL Latching current IH Holding current ID Off-state leakage current VT On-state voltage dVD/dt Critical rate of rise of off-state voltage dVCOM/dt Critical rate of rise of change commutatating current tgt Gate controlled turn-on time Rev.02 © 2006 Thinki Semiconductor Co.,Ltd. Test Condition(s) Min Typ Max BT139-500E ID = 0.1 mA BT139-600E BT139-800E BT139-500E ID = 0.5 mA BT139-600E BT139-800E T2+ G+ VD = 12 V T2+ GRL = 100 Ω T2- GT2- G+ T2+ G+ VD = 12 V T2+ GRL = 100 Ω T2- GT2- G+ T2+ G+ T2+ GVD = 12 V IGT = 100 mA T2- GT2- G+ 500 600 800 500 600 800 - - 30 30 30 100 1.5 1.5 1.5 1.8 60 90 60 90 - - 50 mA - - 0.5 mA - - 1.65 V 100 250 - V/µs - 20 - V/µs - 2 - µs IT = 200 mA, IGT = 50 mA VD = VDRM max Tj = 125°C IT = 10 A VDM = 67% VDRMmax Tj = 125°C Exponential waveform; gate open circuit VD = 400 V; Tj = 95 °C dIcom/dt = 7.2 A/ms IT = 16 A gate open circuit ITM = 20 A; VD = VDRMmax IG = 0.1 A; dIG/dt = 5 A/µs Unit V mA V mA Page 2/2 http://www.thinkisemi.com/