NTE NTE56040

NTE56040 & NTE56041
TRIAC, 4A Sensitive Gate
Description:
The NTE56040 and NTE56041 are glass passivated, sensitive gate TRIACs in a TO220 type package
designed for use in general purpose bidirectional switching and phase control applications, where
high sensitivity is required in all four quadrants.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56041 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed
3A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
2.5
10
mA
MT2 (+), G (–)
–
4.0
10
mA
MT2 (–), G (–)
–
5.0
10
mA
MT2 (–), G (+)
–
11
25
mA
–
3.0
15
mA
MT2 (+), G (–)
–
10
20
mA
MT2 (–), G (–)
–
2.5
15
mA
MT2 (–), G (+)
–
4.0
20
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
IL
VD = 12V, IT = 0.1A
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
2.2
15
mA
On–State Voltage
VT
IT = 5A
–
1.4
1.7
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
VD = VDRMmax, TJ = +125°C
–
0.1
0.5
mA
dVD/dt
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
–
50
–
V/µs
tgt
ITM = 6A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
Gate Controlled Turn–On Time
.420 (10.67)
Max
.110 (2.79)
MT2
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.070 (1.78) Max
.500
(12.7)
Min
MT1
Gate
.100 (2.54)
MT2