ES8D thru ES8J ® Pb ES8D thru ES8J Pb Free Plating Product 8.0 Ampere Surface Mount Super Fast Recovery Rectifiers SMC / DO-214AB O .280 (7.11) .260 (6.60) .012 (.305) .006 (.152) Mechanical Data .245(6.22) .220(5.59) .128(3.25) Special for Automotive LED/HID lamp For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 .103(2.62) .079(2.00) Unit: inch ( mm ) .108(2.75) Features Cases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.093 gram .050 (1.27) .008(.203) .002(.051) .030 (0.76) .320 (8.13) .305 (7.75) Maximum Ratings and Electrical Characteristics Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% O Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A Maximum DC Reverse Current o @T A =25 C at Rated DC Blocking Voltage o @ T A =100 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: Units Symbol ES8D ES8G ES8G V RRM 200 400 600 V V RMS 140 280 420 V V DC 200 400 600 V I(AV) 8.0 A I FSM 125 A VF 0.98 1.3 1.7 V IR 10 350 uA uA Trr 35 nS 30 75 20 -55 to +150 -55 to +150 pF Cj R θJA R θJL TJ T STG 45 o C/W C C o o 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas Rev.02 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ES8D thru ES8J ® FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS INSTANTANEOUS REVERSE CURRENT. ( A) AVERAGE FORWARD CURRENT. (A) 10.0 8.0 4.0 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 Tj=1250C 10 Tj=850C 1 Tj=25 0C 0.1 PEAK FORWARD SURGE CURRENT. (A) 125 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 100 0.01 0 40 60 80 100 120 140 80 60 40 80 20 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 INSTANTANEOUS FORWARD CURRENT. (A) 100 10 1 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 60 JUNCTION CAPACITANCE.(pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=25 0C f=1.0MHz Vsig=50mVp-p 50 40 30 20 8 0.1 10 0 0 1 100 10 0.01 0.4 0.6 0.8 REVERSE VOLTAGE. (V) 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms Rev.02 © 2006 Thinki Semiconductor Co.,Ltd. 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Page 2/2 http://www.thinkisemi.com/