THINKISEMI MUR860H

MUR820H thru MUR860H
®
Pb
MUR820H thru MUR860H
Pb Free Plating Product
8.0 Ampere Ultra Fast Rectifiers for Power Chargers
TO-220AC
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Mechanical Data
¬ Case: Molded TO-220AC
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:Color band denotes cathode
¬ Mounting position: Any
¬ Weight: 2.03 gram approximately
Unit : inch (mm)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR820H
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
o
Current TC=100 C
MUR840H
MUR860H
IF(AV)
8.0
A
IFSM
125
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
0.98
1.3
uA
250
uA
nS
Trr
35
Typical junction Capacitance (Note 2)
CJ
65
Typical Thermal Resistance (Note 3)
Temperature Range
V
10.0
Maximum Reverse Recovery Time (Note 1)
Operating Junction and Storage
1.7
R JC
2.2
TJ, TSTG
-55 to + 150
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR820H thru MUR860H
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
125
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
100
75
50
25
0
0
50
100
150
1
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
100
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE, C
MUR820H
MUR840H
o
8
10
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
MUR860H
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
1.6
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/