MUR1020GD thru MUR1060GD ® Pb MUR1020GD thru MUR1060GD Pb Free Plating Product 10.0 Ampere Dual Doubler Tandem Ultra Fast Recovery Rectifiers Unit : inch (mm) TO-220AB Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability .419(10.66) .196(5.00) .163(4.16) .387(9.85) .139(3.55) MIN .038(0.96) .019(0.50) .1(2.54) .624(15.87) .548(13.93) .50(12.7)MIN .269(6.85) .177(4.5)MAX Mechanical Data ¬ Case:TO-220AB Heatsink ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:As marked on diode body ¬ Mounting position: Any ¬ Weight: 2.2 gram approximately .226(5.75) .054(1.39) .045(1.15) .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "CT" Negative Common Anode Suffix "CA" Case Doubler Tandem Polarity Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MUR1020CT MUR1020CA MUR1020GD MUR1040CT MUR1040CA MUR1040GD MUR1060CT MUR1060CA UNIT MUR1060GD Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified o Current TC=100 C IF(AV) 10.0 A IFSM 100 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 5.0 A VF 0.98 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR 1.3 uA 250 uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 65 Operating Junction and Storage Temperature Range V 10.0 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) 1.7 R JC 2.2 TJ, TSTG -55 to +150 pF o CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MUR1020GD thru MUR1060GD ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 100 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10 8 6 4 2 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 80 60 40 20 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 50 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o MUR1020GD MUR1040GD 5 MUR1060GD 1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/