PD - 90639A IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-39) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V. In addition to the well established characterstics of HEXFETs , they have the added advantage of providing low drive requirements to interface power loads to logic level IC’s and microprocessors. Fields of applications include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gatedrive voltage. The HEXFET technology is the key to International Rectifier’s advanced line of logic level power MOSFET transistors. The efficient geometry and unique processing of the HEXFET achieve very low on-state resistance combined with high transconductance and great device ruggedness. . TO-39 Features: n n n n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Low Drive Requirements Execellent Temperature Stability Fast Switching Speeds Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 5.0V, TC = 25°C ID @ VGS = 5.0V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 5.3 3.4 21 20 0.16 ±10 120 5.3 2.0 5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical) C g For footnotes refer to the last page www.irf.com 1 08/08/01 IRLF120 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 100 — — V — 0.13 — V/°C — — 1.0 3.1 — — — — — — — — 0.35 0.42 2.0 — 250 1000 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 7.0 100 -100 13 2.4 7.1 13 53 30 27 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 480 150 30 — — Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 5.0V, ID = 3.2A ➃ VGS = 4.0V, ID = 2.7A ➃ VDS = VGS, ID = 250µA VDS = 50V, IDS = 3.2A ➃ VDS= 100V, VGS=0V VDS = 80V VGS = 0V, TJ = 125°C VGS = 10V VGS = -10V VGS =5.0V, ID = 5.3A VDS= 80V Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 50V, ID = 5.3A, VGS =5.0V, RG = 18Ω ns Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) nH VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 5.3 21 2.5 220 1.1 Test Conditions A V nS µC Tj = 25°C, IS = 5.3A, VGS = 0V ➃ Tj = 25°C, IF = 5.3A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units — — — — 6.25 175 °C/W Test Conditions Typical socket mount. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRLF120 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs.Temperature 3 IRLF120 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRLF120 RD V DS VGS D.U.T. RG + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. CaseTemperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLF120 1 5V L VD S D .U .T RG IA S VGS 20V D R IV E R + - VD D A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 5.0 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLF120 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25 V, Starting TJ = 25°C, L= 6.1mH Peak IAS = 5.3A, VGS =5.0V, RG= 25Ω ➂ ISD ≤ 5.3A, di/dt ≤ 110A/µs, VDD≤ 100V, TJ ≤ 150°C Suggested RG =18 Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions —TO-205AF ( TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/01 www.irf.com 7