ETC IRFY9140M

PD - 94197A
POWER MOSFET
THRU-HOLE (TO-257AA)
IRFY9140,IRFY9140M
100V, P-CHANNEL
®
HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number
RDS(on)
ID
Eyelets
IRFY9140
0.20 Ω
-15.8A
Glass
IRFY9140M
0.20 Ω
-15.8A
Glass
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
„
„
„
„
„
„
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY9140C, IRFY9140CM
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-15.8
-10
-60
100
0.8
±20
640
-15.8
10
-5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300(0.063in./1.6mm from case for 10 sec)
3.3 (Typical)
C
g
For footnotes refer to the last page
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1
10/03/01
IRFY9140, IRFY9140M
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
6.2
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
—
V
-0.1
—
V/°C
—
0.20
Ω
—
—
—
—
-4.0
—
-25
-250
V
S( )
—
—
—
—
—
—
—
—
—
6.8
-100
100
30
7.1
21
35
85
85
65
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -10A ➃
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -10A ➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -15.8A
VDS = -50V
Ω
Electrical Characteristics
µA
nA
nC
VDD = -50V, ID = -15.8A,
VGS = -10V, RG =7.5Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
—
—
—
1400
600
200
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-15.8
-60
-4.2
280
3.6
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = -15.8A, VGS = 0V ➃
Tj = 25°C, IF = -15.8A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 1.25
0.21 —
—
80
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFY9140, IRFY9140M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID=-15.8A
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFY9140, IRFY9140M
ID=-15.8A
3a
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
-I D , D rai n C u rre n t (A )
O P E R AT IO N I N T H IS A R E A L IM I T E D
B Y R D S(on)
100
100µs
10
1m s
TC = 2 5 °C
T J = 1 5 0 °C
S ing le P uls e
1
1
10ms
A
10
100
1000
-V D S , D ra in -to -S o u rc e V o lta g e (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFY9140, IRFY9140M
Negative I D, Drain Current (Amps)
30
RD
V DS
VGS
25
D.U.T.
RG
-
20
+
V DD
VGS
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
td(on)
A
0
25
50
75
100
125
150
tr
t d(off)
tf
VGS
10%
T C , C a s e T em pe ra ture (°C )
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
T he rm al R esponse (Z th J C )
10
1
D = 0 . 50
0 .2 0
PDM
0 .1 0
0.1
t
1
t2
0 .0 5
0 .0 2
0 .0 1
Notes:
1. Duty factor D = t / t
1
2
S IN G L E P U L S E
( TH E R M A L R E S P O N S E )
2. Peak TJ = PDM x ZthJC
0.01
0.00001
0.0001
0.001
0.01
+T
C
0.1
1
t 1 , R ectan gular P u lse D ur ation (s ec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFY9140, IRFY9140M
VGS
-20V
-
D.U.T
RG
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
E A S , S in g le P uls e A v a la nc h e E ne rgy (m J )
L
VDS
800
600
400
200
0
I = -1 9A
V
= -25 V
25
I AS
50
A
75
100
125
150
175
S ta rtin g TJ , J un c tion Te m p e ra ture (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-10V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFY9140, IRFY9140M
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -50V, starting TJ = 25°C, L= 5.1mH
Peak IL = -15.8A, VGS = -10V
➂ ISD ≤ -15.8A, di/dt ≤ -200A/µs,
VDD ≤ -100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information..
Data and specifications subject to change without notice. 10/01
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