PD - 94197A POWER MOSFET THRU-HOLE (TO-257AA) IRFY9140,IRFY9140M 100V, P-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. TO-257AA Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Glass Eyelets For Space Level Applications Refer to Ceramic Version Part Numbers IRFY9140C, IRFY9140CM Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -15.8 -10 -60 100 0.8 ±20 640 -15.8 10 -5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300(0.063in./1.6mm from case for 10 sec) 3.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 10/03/01 IRFY9140, IRFY9140M @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage -100 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 6.2 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — — — — — — — Typ Max Units — — V -0.1 — V/°C — 0.20 Ω — — — — -4.0 — -25 -250 V S( ) — — — — — — — — — 6.8 -100 100 30 7.1 21 35 85 85 65 — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -10A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -10A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -10V, ID = -15.8A VDS = -50V Ω Electrical Characteristics µA nA nC VDD = -50V, ID = -15.8A, VGS = -10V, RG =7.5Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) — — — 1400 600 200 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -15.8 -60 -4.2 280 3.6 Test Conditions A V nS µC Tj = 25°C, IS = -15.8A, VGS = 0V ➃ Tj = 25°C, IF = -15.8A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max Units — — — — 1.25 0.21 — — 80 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFY9140, IRFY9140M Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics ID=-15.8A Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFY9140, IRFY9140M ID=-15.8A 3a Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 -I D , D rai n C u rre n t (A ) O P E R AT IO N I N T H IS A R E A L IM I T E D B Y R D S(on) 100 100µs 10 1m s TC = 2 5 °C T J = 1 5 0 °C S ing le P uls e 1 1 10ms A 10 100 1000 -V D S , D ra in -to -S o u rc e V o lta g e (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFY9140, IRFY9140M Negative I D, Drain Current (Amps) 30 RD V DS VGS 25 D.U.T. RG - 20 + V DD VGS 15 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 td(on) A 0 25 50 75 100 125 150 tr t d(off) tf VGS 10% T C , C a s e T em pe ra ture (°C ) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms T he rm al R esponse (Z th J C ) 10 1 D = 0 . 50 0 .2 0 PDM 0 .1 0 0.1 t 1 t2 0 .0 5 0 .0 2 0 .0 1 Notes: 1. Duty factor D = t / t 1 2 S IN G L E P U L S E ( TH E R M A L R E S P O N S E ) 2. Peak TJ = PDM x ZthJC 0.01 0.00001 0.0001 0.001 0.01 +T C 0.1 1 t 1 , R ectan gular P u lse D ur ation (s ec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFY9140, IRFY9140M VGS -20V - D.U.T RG + IAS tp VVDD DD DRIVER A 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit E A S , S in g le P uls e A v a la nc h e E ne rgy (m J ) L VDS 800 600 400 200 0 I = -1 9A V = -25 V 25 I AS 50 A 75 100 125 150 175 S ta rtin g TJ , J un c tion Te m p e ra ture (°C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -10V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFY9140, IRFY9140M Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -50V, starting TJ = 25°C, L= 5.1mH Peak IL = -15.8A, VGS = -10V ➂ ISD ≤ -15.8A, di/dt ≤ -200A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 10/01 www.irf.com 7