PD - 91285D POWER MOSFET THRU-HOLE (TO-257AA) IRFY044C,IRFY044CM 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. TO-257AA Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited For Space Level Applications Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 16* 16* 156 100 0.8 ±20 100 16* 10 4.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical) C g * Current is limited by pin diameter For footnotes refer to the last page www.irf.com 1 4/18/01 IRFY044C, IRFY044CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions 60 — — V VGS = 0V, ID = 1.0mA — 0.68 — V/°C Reference to 25°C, ID = 1.0mA — — 0.04 Ω 2.0 17 — — — — — — 4.0 — 25 250 V S( ) — — — — — — — — — — — — — — — — — — — 6.8 100 -100 88 15 52 23 130 81 79 — VGS = 10V, ID = 16A ➃ VDS = VGS, ID = 250µA VDS > 15V, IDS = 16A ➃ VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 16A VDS = 30V Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 30V, ID = 16A, RG = 9.1Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2400 1100 230 — — — VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 16* 156 2.5 220 1.6 Test Conditions A V nS µC Tj = 25°C, IS = 16A, VGS = 0V ➃ Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by pin diameter Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max Units — — — — 1.25 0.21 — — 80 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFY044C, IRFY044CM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16A Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFY044C, IRFY044CM 16A 3 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFY044C, IRFY044CM V DS VGS RD D.U.T. RG + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFY044C, IRFY044CM 15V L VDS D .U .T. RG IA S 20V 1 D R IV E R + - VD D A 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V 0 .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFY044C, IRFY044CM Foot Notes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 16A, di/dt ≤ 100A/µs, maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 0.78mH Peak IL = 16A, VGS = 10V ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 60V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7