Order this document by MMBT589LT1/D SEMICONDUCTOR TECHNICAL DATA # " # #" $" !!" " " "! A Device of the mX Family COLLECTOR 3 30 Volts 2.0 Amps PNP Transistor 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector – Emitter Voltage VCEO –30 Vdc Collector – Base Voltage VCBO – 50 Vdc Emitter – Base Voltage VEBO – 5.0 Vdc IC –1.0 Adc ICM –2.0 A Symbol Max Unit PD (1) 310 mW 2.5 mW/°C RqJA (1) 403 °C/W PD (2) 710 mW 5.7 mW/°C 176 °C/W Collector Current — Continuous Collector Current — Peak CASE 318 – 08, STYLE 6 SOT23LF (TO – 236AB) DEVICE MARKING MMBT589LT1 = G3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature RqJA (2) PDsingle (3) mW 575 TJ, Tstg – 55 to +150 °C 1. FR– 4 @ Minimum Pad 2. FR– 4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 Thermal Clad is a trademark of the Bergquist Company mX : MicroExecutive Family of High Performance Surface Mount Devices Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1998 1 MMBT589LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –30 — –50 — –5.0 — — –0.1 — –0.1 — –0.1 100 100 80 40 — 300 — — — — — –0.25 –0.30 –0.65 — –1.2 — –1.1 100 — — 15 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –30 Vdc, IE = 0) ICBO Collector–Emitter Cutoff Current (VCES = –30 Vdc) ICES Emitter Cutoff Current (VEB = –4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (Figure 1) (IC = –1.0 mA, VCE = –2.0 V) (IC = –500 mA, VCE = –2.0 V) (IC = –1.0 A, VCE = –2.0 V) (IC = 2.0 A, VCE = –2.0 V) hFE Collector – Emitter Saturation Voltage (1) (Figure 3) (IC = –0.5 A, IB = –0.05 A) (IC = –1.0 A, IB = 0.1 A) (IC = –2.0 A, IB = –0.2 A) VCE(sat) Base – Emitter Saturation Voltage (1) (Figure 2) (IC = –1.0 A, IB = –0.1 A) Base – Emitter Turn–on Voltage (1) (IC = –1.0 A, VCE = –2.0 V) VBE(sat) Cutoff Frequency (IC = –100 mA, VCE = –5.0 V, f = 100 MHz) fT Output Capacitance (f = 1.0 MHz) V V VBE(on) Cobo V MHz pF 1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT589LT1 200 230 210 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = –2.0 V 100 50 VCE = –1.0 V 125°C 190 170 150 25°C 130 110 90 –55°C 70 0 50 0.01 0.001 0.1 1.0 10 1000 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain versus Collector Current Figure 2. DC Current Gain versus Collector Current VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 1.0 0.9 VBE(sat) 0.8 V, VOLTAGE (VOLTS) 100 IC, COLLECTOR CURRENT (AMPS) 1.0 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 0 10 1.0 100 0.8 0.75 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.6 1000 mA 0.4 100 mA 50 mA 10 mA 0 0.1 IC/IB = 10 IC, COLLECTOR CURRENT (AMPS) 0.8 0.01 0.9 0.85 IC, COLLECTOR CURRENT (mA) 1.0 0.2 0.95 1000 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 1.0 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBT589LT1 IC , COLLECTOR CURRENT (AMPS) 10 SINGLE PULSE TEST AT Tamb = 25°C 1s 100 ms 10 ms 1.0 1 ms 100 ms 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 0.2 0.1 1.0E+00 0.05 0.02 D = 0.01 Rthja , (t) 1.0E–01 1.0E–02 r(t) 1.0E–03 1E–05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT589LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. Motorola Small–Signal Transistors, FETs and Diodes Device Data SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 5 MMBT589LT1 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 3 B S 1 V 2 DIM A B C D G H J K L S V G C D H J K CASE 318–08 ISSUE AF INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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