COSMOSIC SEMICONDUCTOR CO. FM MODULATOR - INFRARED TRANSMITTER GENERAL DESCRIPTION The hs2k219 is high speed ic types are frequency modulator. fabricated withsilicon gate CMOS technology . It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. all inputs are equipped with protection circuits against static discharge or transient excess voltage . FEATURE: Output frequency range 50khz ~ 15Mhz . Automatic power on/off function . Low voltage and low power consumption . High speed max(3v=10Mhz);(5v=15Mhz) Low power dissipation icc=4uA(max.)at ta=25 Wide operating voltage range vcc(opr)=2 ~ 5v RECOMMENDED OPERATING CONDITIONS: Supply voltage vcc 2.5v to 5v ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Supply voltage range Vcc VALUE -0.5 ~ 7 UNIT V DC vcc/ground current Icc +_50 mA Power dissipation PD 180 (MFP) mW Storage temperature Tstg - 20 ~ 120 Lead temperature 10sec TL 300 PACKAGE OUTLINES 5.4MAX 7.8 10.5MAX 0.1 0.15 1.8MAX 0.43 1.27 0.5 Note Lead pitch is 1.27 and tolerance is ± 0.12 against theoretical center of each lead that is obtain on the basis of No.1 and No.14 leads. HS2k219 : 8-lead DIL ; plastic (with internal heat spreader) (SOT97A) . HS2k219:8-lead mini-pack ; plastic (DIP16 ; SOT96A) . HS2k219 INTEGRATED CIRCUIT Pin functions pin no. symbol Description pin no. symbol Description 1 Vcc1 Power supply 8 Fo2 Frequency out 2 Modu.1 Fm modulation in 9 Tc Off time control 3 F adj.1 Frequency adjust 10 Tr2 Trigger on 4 Vss1 GND 11 Vcc2 Power supply 5 Modu.2 Fm modulation in 12 Fo1 Frequency out 6 F adj.2 Frequency adjust 13 Nc 7 Vss2 GND 14 Tr1 Trigger on block diagram . Tr1 Nc Fo1 Trigger modu.1. Tr2 Tc Fo2 Trigger modu. & osc Vcc1 Vcc2 F adj.1 buffer Vss1 modu. & osc modu.2 F adj.2 buffer Vss2 HS2K219 APPENDIX DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION Ta=25 Ta=-4085 VCC MIN TYP MAX Input Leakage current R/C Terminal off-state current Quiescent Supply Current Active-State * Supply Current IIN IIN ICC ICC’ VIN=VCC or GND VIN=VCC or GND VIN=VCC or GND VIN=VCC or GND MIN UNIT MAX 6.0 ± 0 .1 ± 0 .1 uA 6.0 ± 0 .5 ± 0 .5 uA 6.0 4.0 40.0 uA 2.0 4.5 6.0 40 0.1 0.2 120 0.3 0.6 160 0.4 0.8 uA mA mA AC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Ta=25 TEST CONDITION Ta=-4085 VCC MIN TYP MAX Fm modulation in Vco in Output Transition Time tTLH tTHL Output Frequency Output Pulse Width Error Between CircuitsIn same Package fWOUT ∆ tWOUT MIN UNIT MAX R14=56k Ω 5.0 200 250 300 30 8 7 VR1=5k Ω R15=1.5k Ω 2.0 4.5 6.0 3.0 5.0 3.2 75 15 13 95 19 16 VR1=5k Ω R15=1.8k Ω 3.0 5.0 2.8 mhz VR1=5k Ω R15=3.3k Ω 3.0 5.0 2.3 mhz ±1 % mv ns mhz AC ELECTRICAL CHARACTERISTICSContinuous PARAMETER SYMBOL Ta=25 TEST CONDITION Ta=-4085 UNIT VCC MIN TYP MAX Minimum Trigger 5.0 Level Minimum Trigger Pulse Width Trigger Off Time tWH tWL tREM Power Dissipation Capacitance CPD MAX 300 mv 2.0 5.0 0.2 0.06 C19=0.1u 2 5.0 2 1.2 s C19= 22u 2 5.0 80 60 s 2.0 5.0 0 0 0 0 us uF tRR Minimum Clear Removal Time MIN ms Application Circuit C2 10u R4 330 R9 6K8 C11 1u C15 1n U3 R18 47 D1 1N4148 78L05 R2 C1 820P 5K1 U1 BA3308F C3 100P R11 R14 U2 HS2K219 56K 12K 7 OP2 NC 8 L IN JK1 R3 10K C4 1u C9 C25 VR1 5K C14 220P NC 12 R13 4M7 4 VSS VDD 11 C20 R16 15K 2 GND IN1 13 R6 1 OP1 NC 14 R IN JK2 820P C19 10u 560k 100P R22 3.3 C21 100P 56K FAY Q1 C5343SFG Q2 C5344SFY DAG R8 330 R10 6K8 C12 COSMOSIC SEMICONDUCTOR CO. 1u C16 1n IRT 470P 7 VSS FO2 8 5K1 C6 10u R19 D5 C27 C24 5K R17 R12 12K 100P 2n2 6 RES TC1 9 VR2 C5 IRT 5 RIN TR2 10 1u C7 D4 R15 12K 3 NC C8 150P 3 RES FO1 12 47u D3 IRT 100n 4 ALC NF1 11 R7 10K 100n IRT 47u 5 VCC NF2 10 47K D2 C26 2 LIN NC 13 C10 R5 C23 220P 6 NC IN2 9 47K 2n2 1 VDD TR1 14 C13 R1 C18 C17 C22 150P 47u R20 470 R21 3.3 C28 470P JK3 DC-12V