BYM36 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated Hermetically sealed package Very low switching losses Low reverse current 949588 Mechanical Data • High reverse voltage Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Applications Switched mode power supplies High-frequency inverter circuits Parts Table Part Type differentiation Package BYM36A VR = 200 V; IFAV = 3 A SOD-64 BYM36B VR = 400 V; IFAV = 3 A SOD-64 BYM36C VR = 600 V; IFAV = 3 A SOD-64 BYM36D VR = 800 V; IFAV = 2.9 A SOD-64 BYM36E VR = 1000 V; IFAV = 2.9 A SOD-64 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Test condition see electrical characteristics Junction and storage temperature range Document Number 86012 Rev. 1.6, 12-Aug-04 Symbol Value Unit VR = VRRM 200 V BYM36B VR = VRRM 400 V BYM36C VR = VRRM 600 V BYM36D VR = VRRM 800 V BYM36E VR = VRRM 1000 V tp = 10 ms, half sinewave Average forward current Non repetitive reverse avalanche energy Part BYM36A I(BR)R = 1 A, inductive load IFSM 65 A BYM36A-BYM36C IFAV 3 A BYM36D-BYM36E IFAV 2.9 A ER 20 mJ Tj = Tstg - 55 to + 175 °C www.vishay.com 1 BYM36 VISHAY Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit l = 10 mm, TL = constant RthJA 25 K/W on PC Board with spacing \re\n25 mm RthJA 70 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition IF = 3 A Forward voltage IF = 3 A, Tj = 175 °C Reverse current Reverse breakdown voltage Symbol Max Unit VF Min Typ. 1.6 V BYM36DBYM36E VF 1.78 V BYM36ABYM36C VF 1.22 V BYM36DBYM36E VF 1.28 V VR = VRRM IR 5 µA VR = VRRM, Tj = 150 °C IR 100 µA IR = 100 µA IF = 0.5 A, IR = 1 A, iR = 0.25 A Reverse recovery time Part BYM36ABYM36C BYM36A V(BR)R 300 V BYM36B V(BR)R 500 V BYM36C V(BR)R 700 V BYM36D V(BR)R 900 V BYM36E V(BR)R 1100 V BYM36ABYM36C trr 100 ns BYM36DBYM36E trr 150 ns 600 500 R thJA = 25 K/W 1000V 400 800V 300 600V R thJA = 70 K/W 200 400V 100 0 95 9705 200V 0 40 80 120 160 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 2 4 BYM36A, BYM36B, BYM36C 3 R thJA = 25 K/W 2 R thJA =70 K/W 1 V R = VRRM Half Sinewave 0 200 Tj – Junction Temperature ( ° C ) www.vishay.com I FAV - Average Forward Current ( A ) PR - Maximum Reverse Power Dissipation (mW Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0 95 9706 40 80 120 160 200 Tamb - Ambient Temperature ( °C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Document Number 86012 Rev. 1.6, 12-Aug-04 BYM36 VISHAY Vishay Semiconductors I FAV – Average Forward Current ( A ) 4 100 3 R thJA = 25 K/W 2 R thJA = 70 K/W 1 V R =V RRM Half Sinewave 0 0 40 10 1 Tj = 25°C 0.1 0.01 BYM36D, BYM36E 0.001 80 120 200 160 Tamb – Ambient Temperature ( °C ) 95 9707 Tj = 175°C I F – Forward Current ( A ) BYM36D, BYM36E 0 1 2 4 3 V F – Forward Voltage ( V ) 95 9709 Figure 6. Max. Forward Current vs. Forward Voltage Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 CD – Diode Capacitance ( pF ) I R - Reverse Current ( µA ) 90 100 10 V R = VRRM 1 0.1 0 40 80 120 160 60 50 40 30 20 10 0.1 16302 Figure 4. Max. Reverse Current vs. Junction Temperature 70 0 200 Tj - Junction T emperature ( ° C ) 95 9704 f =1 MHz 80 1 10 100 V R – Reverse Voltage ( V ) Figure 7. Diode Capacitance vs. Reverse Voltage I F – Forward Current ( A ) 100 Tj = 175°C 10 1 Tj = 25° C 0.1 0.01 0.001 0 95 9708 BYM36A, BYM36B, BYM36C 1 2 3 4 V F – Forward Voltage ( V ) Figure 5. Max. Forward Current vs. Forward Voltage Document Number 86012 Rev. 1.6, 12-Aug-04 www.vishay.com 3 BYM36 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. www.vishay.com 4 4.0 (0.156) max. 26 (1.014) min. 94 9587 Document Number 86012 Rev. 1.6, 12-Aug-04 BYM36 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86012 Rev. 1.6, 12-Aug-04 www.vishay.com 5