VISHAY SL03

SL02 to SL04
VISHAY
Vishay Semiconductors
Small Surface Mount Schottky Diodes
\
Features
•
•
•
•
•
For surface mounted applications
Low-profile package
Ideal for automated placement
Low power loss, high efficiency
High temperature soldering: 260 °C/10 seconds at
terminals
17249
Mechanical Data
Case: JEDEC DO-219-AB (SMF) Plastic case
Polarity: Color band denotes cathode end
Weight: approx. 0.01g
Packaging codes-options:
G1-10 K per 13 " reel (8 mm tape), 50 K/box
G2-3 K per 7 " reel (8 mm tape), 30 K/box
Parts Table
Part
Type differentiation
Marking
Package
SL02
Single Diodes
S2
SMF
SL03
Single Diodes
S3
SMF
SL04
Single Diodes
S4
SMF
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave
Document Number 85687
Rev. 3, 21-Feb-03
Ttp = 109 °C
Part
Symbol
Value
Unit
SL02
VRRM
20
V
SL03
VRRM
30
V
SL04
VRRM
40
V
SL02
VRMS
14
V
SL03
VRMS
21
V
SL04
VRMS
28
V
SL02
VDC
20
V
SL03
VDC
30
V
SL04
VDC
40
V
IF(AV)
1.1
A
IFSM
40
A
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SL02 to SL04
VISHAY
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
RθJA
180
K/W
Maximum operating junction
temperature
TJ
125
°C
Storage temperature range
TSTG
- 55 to 150
°C
Thermal resistance junction to
ambient air2)
2)Mounted
on epoxy substrate with 3 x 3mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Typ.
Max
Unit
SL02
VF
0.360
0.385
V
SL03
VF
0.395
0.43
V
SL04
VF
0.450
0.51
V
1.1 A
SL02
VF
0.420
V
1.1 A
SL03
VF
0.450
V
1.1 A
SL04
VF
0.530
V
TA = 25 °C
SL02
IR
250
µA
TA = 100 °C
SL02
IR
8.0
mA
TA = 25 °C
SL03
IR
130
µA
TA = 100 °C
SL03
IR
6.0
mA
TA = 25 °C
SL04
IR
20
µA
TA = 100 °C
SL04
IR
6.0
mA
1)
Instaneous forward voltage at 0.5
Typical instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
1)
Pulse test: 300 µs pulse width, 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
Junction Capacitance (pF)
Average Forward Current (A)
1.5
1.0
0.5
100
SL02
50
10
0
10
30
50
70
90
110
130
150
Lead temperature (°C)
Figure 1. Forward Current Derating Curve
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2
150
SL04
0
17379
200
17380
0
2
4
6
8
10
12
Reverse Voltage (V)
Figure 2. Typical Junction Capacitance
Document Number 85687
Rev. 3, 21-Feb-03
SL02 to SL04
VISHAY
10000
10
TJ = 100°C
1
Instantaneous Reverse Current (µ A)
Instantaneous Forward Current (A)
Vishay Semiconductors
TJ = 100°C
1000
TJ = 75°C
0.1
TJ = 50°C
0.01
TJ = 25°C
0.001
Pulse Width = 300µs
1% Duty Cycle
0.0001
0
0.2
0.1
17381
0.3
0.5
0.4
0.6
0.7
0.8
0.9
TJ = 50°C
10
TJ = 25°C
1
0
17384
Figure 3. Typical Instantaneous Forward Characterisics - SL02
100
0.1
1.0
Instantaneous Forward Voltage (V)
TJ = 75°C
5
10
15
20
25
30
35
Reverse Voltage (V)
Figure 6. Typical Reverse Current Characteristics - SL03
10000
Instantaneous Reverse Current (µA)
TJ = 100°C
TJ = 75°C
1000
TJ = 50°C
100
TJ = 25°C
10
1
15
10
5
0
17382
20
25
Reverse Voltage (V)
Instantaneous Forward Current (A)
Figure 4. Typical Reverse Current Characteristics - SL02
10
TJ = 100°C
1
TJ = 75°C
0.1
TJ = 50°C
0.01
TJ = 25°C
0.001
Pulse Width = 300µs
1% Duty Cycle
0.0001
0
0.1
17383
0.2
0.3
0.4 0.5
0.6
0.7
0.8
0.9 1.0
Instantaneous Forward Voltage (V)
Figure 5. Typical Instantaneous Forward Characteristics - SL03
Document Number 85687
Rev. 3, 21-Feb-03
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SL02 to SL04
VISHAY
Vishay Semiconductors
Package Dimensions in mm
Cathode Band
T op View
1.8 ± 0.1
1.0 ± 0.2
2.8 ± 0.1
5
0.05 - 0.30
0.98 ± 0.1
5
Z
0.60 ± 0.25
Detail Z
enlarged
0.00 - 0.10
3.7 ± 0.2
17247
Mounting Pad Layout
1.6
1.2
1.2
17248
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Document Number 85687
Rev. 3, 21-Feb-03
SL02 to SL04
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85687
Rev. 3, 21-Feb-03
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