TSL257 HIGHSENSITIVITY LIGHTTOVOLTAGE CONVERTER TAOS023A – JULY 2000 Converts Light Intensity to Output Voltage Monolithic Silicon IC Containing PACKAGE (FRONT VIEW) Photodiode, Operational Amplifier, and Feedback Components High Sensitivity Single Voltage Supply Operation (2.7 V to 5.5 V) Low Noise (200 µVrms Typ to 1 kHz) Rail-to-Rail Output High Power-Supply Rejection (35 dB at 1 kHz) Compact 3-Leaded Plastic Package 1 2 3 GND VDD OUT Description The TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 MΩ. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear plastic sidelooker package with an integral lens. Functional Block Diagram – Voltage Output + Terminal Functions TERMINAL NAME DESCRIPTION NO. GND 1 Ground (substrate). All voltages are referenced to GND. OUT 3 Output voltage VDD 2 Supply voltage www.taosinc.com Copyright 2001, TAOS Inc. Texas Advanced Optoelectronic Solutions Inc. 800 Jupiter Road, Suite 205 Plano, TX 75074 (972) 673-0759 1 TSL257 HIGHSENSITIVITY LIGHTTOVOLTAGE CONVERTER TAOS023A – JULY 2000 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. Recommended Operating Conditions Supply voltage, VDD Operating free-air temperature, TA MIN MAX UNIT 2.7 5.5 V 0 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted) (see Notes 2 and 3) PARAMETER VD TEST CONDITIONS Dark voltage MIN Ee = 0 TYP 0 VDD = 4.5 V, No Load VDD = 4.5 V, RL = 10 kΩ 15 Maximum output voltage swing VO Output voltage Ee = 1.54 µW/cm2, λp = 470 nm, Note 5 αVD Temperature coefficient of dark voltage (VD) TA = 0°C to 70°C –15 λp = 428 nm, see Notes 4 and 8 1.18 λp = 470 nm, see Notes 5 and 8 1.30 λp = 565 nm, see Notes 6 and 8 1.58 λp = 645 nm, see Notes 7 and 8 1.68 Irradiance responsivity PSRR Power supply y rejection j ratio IDD Supply current UNIT mV 4.49 VOM Ne MAX fac = 100 Hz, see Note 9 4 4.2 1.6 2 V 2.4 µV/°C V/( W/cm2) V/(µW/cm 55 fac = 1 kHz, see Note 9 35 Ee = 1.54 µW/cm2, λp = 470 nm, Note 5 1.9 V dB dB 3.5 mA NOTES: 2. Measured with RL = 10 kΩ between output and ground. 3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. 4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm, spectral halfwidth ∆λ½ = 65 nm. 5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λp = 470 nm, spectral halfwidth ∆λ½ = 35 nm. 6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm, spectral halfwidth ∆λ½ = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm, spectral halfwidth ∆λ½ = 25 nm. 8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 9. Power supply rejection ratio PSRR is defined as 20 log (∆VDD(f)/∆VO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V. Copyright 2001, TAOS Inc. 2 www.taosinc.com TSL257 HIGHSENSITIVITY LIGHTTOVOLTAGE CONVERTER TAOS023A – JULY 2000 Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tr Output pulse rise time, 10% to 90% of final value See Note 10 and Figure 1 160 250 µs tf Output pulse fall time, 10% to 90% of final value See Note 10 and Figure 1 150 250 µs ts Output settling time to 1% of final value See Note 10 and Figure 1 330 µs Integrated noise voltage f = dc to 1 kHz Ee = 0 200 µVrms f = 10 Hz Ee = 0 6 f = 100 Hz Ee = 0 6 f = 1 kHz Ee = 0 7 Vn Output noise voltage, g , rms µV/√Hz µ √ rms NOTE 10: Switching characteristics apply over the range VO = 0.1 V to 4.5 V. PARAMETER MEASUREMENT INFORMATION VDD Pulse Generator Ee 2 Input LED (see Note A) – 3 tf tr Output + 90% RL TSL257 1 Output (see Note B) 10% 90% 10% VOLTAGE WAVEFORM TEST CIRCUIT NOTES: A. The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: λp = 470 nm, tr < 1 µs, tf < 1 µs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF. Figure 1. Switching Times www.taosinc.com Copyright 2001, TAOS Inc. 3 TSL257 HIGHSENSITIVITY LIGHTTOVOLTAGE CONVERTER TAOS023A – JULY 2000 TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION RATIO vs FREQUENCY PHOTODIODE SPECTRAL RESPONSIVITY 1.6 80 Normalized to 470 nm TA = 25°C Power Supply Rejection Ratio — dB 1.4 Relative Responsivity 1.2 1.0 0.8 0.6 0.4 0.2 70 60 50 40 30 20 10 0 300 0 500 700 900 λ – Wavelength – nm 1100 102 10 Figure 2 0.9 8 0.8 Normalized Response V D– Dark Voltage – mV 1.0 9 7 6 5 4 3 0.7 0.6 0.5 0.4 0.3 2 0.2 1 0.1 0 10 30 50 20 40 60 TA – Free-Air Temperature – °C 70 0 –90 –70 –50 –30 –10 10 30 50 Angular Displacement – Figure 4 Copyright 2001, TAOS Inc. 4 106 NORMALIZED RESPONSE vs ANGULAR DISPLACEMENT VDD = 5 V 0 105 Figure 3 DARK VOLTAGE vs FREE-AIR TEMPERATURE 10 103 104 f – Frequency – Hz 70 90 Figure 5 www.taosinc.com TSL257 HIGHSENSITIVITY LIGHTTOVOLTAGE CONVERTER TAOS023A – JULY 2000 MECHANICAL DATA The TSL257 is implemented in a clear 3-leaded package with a molded focusing lens. 0.072 (1,84) 0.057 (1,44) 0.189 (4,80) 0.173 (4,40) 0.165 (4,20) 0.150 (3,80) 0.032 (0,80) 0.016 (0,40) 0.071 (1,80) R 0.035 (0,90) 0.071 (1,8) 0.110 (2,80) 0.016 (0,40) 0.189 (4,80) 0.173 (4,40) 0.029 (0,75) 0.079 (2,00) 0.039 (1,00) 0.027 (0,70) 0.102 (2,6) 0.026 (0,65) 0.630 (16,00) 0.531 (13,50) 0.018 (0,45) 0.018 (0,45) 0.079 (2,00) 0.079 (2,00) Figure 6. Package Configuration NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. All dimensions apply before solder dip. Package body is a clear nonfilled optically transparent material Index of refraction of clear plastic is 1.55. www.taosinc.com Copyright 2001, TAOS Inc. 5 TSL257 HIGHSENSITIVITY LIGHTTOVOLTAGE CONVERTER TAOS023A – JULY 2000 PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK. TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of Texas Advanced Optoelectronic Solutions Incorporated. Copyright 2001, TAOS Inc. 6 www.taosinc.com