Datasheet

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is now
ams AG
The technical content of this TAOS datasheet is still valid.
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TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
r
r
TAOS023E − SEPTEMBER 2007
D Converts Light Intensity to Output Voltage
D Monolithic Silicon IC Containing
al
id
D
D
1
GND
2
VDD
lv
D
D
D
Photodiode, Operational Amplifier, and
Feedback Components
High Sensitivity
Single Voltage Supply Operation (2.7 V to
5.5 V)
Low Noise (200 μVrms Typ to 1 kHz)
Rail-to-Rail Output
High Power-Supply Rejection (35 dB at
1 kHz)
Compact 3-Leaded Plastic Package
RoHS Compliant (−LF Package Only)
PACKAGE SM
SURFACE MOUNT
SIDELOOKER
(FRONT VIEW)
3
OUT
am
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on A
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nt
st
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D
D
PACKAGE S
SIDELOOKER
(FRONT VIEW)
1
GND
Description
2
VDD
3
OUT
The TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and
a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly
proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 MΩ.
The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear
plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is
RoHS compliant.
Functional Block Diagram
−
Voltage
Output
Available Options
TA
PACKAGE − LEADS
PACKAGE DESIGNATOR
ni
DEVICE
ca
+
ORDERING NUMBER
0°C to 70°C
3-lead Sidelooker
S
TSL257
TSL257
0°C to 70°C
3-lead Sidelooker — Lead (Pb) Free
S
TSL257−LF
TSL257
0°C to 70°C
3-lead Surface-Mount Sidelooker — Lead (Pb) Free
ch
TSL257
SM
TSL257SM−LF
Terminal Functions
Te
TERMINAL
NAME
DESCRIPTION
NO.
GND
1
Ground (substrate). All voltages are referenced to GND.
OUT
3
Output voltage
VDD
2
Supply voltage
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road S Suite 300 S Plano, TX 75074 S (972)
r 673-0759
www.taosinc.com
1
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
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id
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) . . . . . . . . . . . . . . . . . . . . 260°C
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
MIN
MAX
2.7
5.5
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st
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Supply voltage, VDD
lv
Recommended Operating Conditions
Operating free-air temperature, TA
0
UNIT
V
70
°C
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
VD
Dark voltage
TEST CONDITIONS
MIN
Ee = 0
VOM
Maximum output voltage swing
VO
Output voltage
αVD
Temperature coefficient of dark voltage (VD)
VDD = 4.5 V,
No Load
VDD = 4.5 V,
RL = 10 kΩ
Irradiance responsivity
PSRR
Power supply
pp y rejection
j
ratio
IDD
Supply current
MAX
15
4.49
4
Ee = 1.54 μW/cm2, λp = 470 nm, Note 5
Ne
TYP
0
1.6
4.2
2
TA = 0°C to 70°C
−15
λp = 428 nm, see Notes 4 and 8
1.18
λp = 470 nm, see Notes 5 and 8
1.30
λp = 565 nm, see Notes 6 and 8
1.58
λp = 645 nm, see Notes 7 and 8
1.68
fac = 100 Hz, see Note 9
2.4
ca
35
Ee = 1.54 μW/cm2, λp = 470 nm, Note 5
1.9
mV
V
V
μV/°C
V/( W/cm2)
V/(μW/cm
55
fac = 1 kHz, see Note 9
UNIT
3.5
dB
dB
mA
Te
ch
ni
NOTES: 2. Measured with RL = 10 kΩ between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm,
spectral halfwidth Δλ½ = 65 nm.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λp = 470 nm,
spectral halfwidth Δλ½ = 35 nm.
6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm,
spectral halfwidth Δλ½ = 28 nm.
7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm,
spectral halfwidth Δλ½ = 25 nm.
8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus
Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.
9. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.
Copyright E 2007, TAOS Inc.
2
The LUMENOLOGY r Company
r
www.taosinc.com
r
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tr
Output pulse rise time, 10% to 90% of final value
See Note 10 and Figure 1
160
250
μs
tf
Output pulse fall time, 10% to 90% of final value
See Note 10 and Figure 1
150
250
μs
ts
Output settling time to 1% of final value
See Note 10 and Figure 1
330
μs
Integrated noise voltage
f = dc to 1 kHz
Ee = 0
200
μVrms
f = 10 Hz
Ee = 0
6
f = 100 Hz
Ee = 0
6
f = 1 kHz
Ee = 0
7
Output
p noise voltage,
g , rms
μV/√Hz
μ
/
rms
al
id
Vn
lv
NOTE 10: Switching characteristics apply over the range VO = 0.1 V to 4.5 V.
PARAMETER MEASUREMENT INFORMATION
am
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st
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VDD
Pulse
Generator
Ee
2
LED
(see Note A)
Input
−
3
+
90%
RL
TSL257
1
tf
tr
Output
Output
(see Note B)
10%
90%
10%
VOLTAGE WAVEFORM
TEST CIRCUIT
NOTES: A. The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: λp = 470 nm,
tr < 1 μs, tf < 1 μs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF.
Te
ch
ni
ca
Figure 1. Switching Times
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
www.taosinc.com
r
3
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
TYPICAL CHARACTERISTICS
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
PHOTODIODE SPECTRAL RESPONSIVITY
80
Normalized to
470 nm
1.2
1.0
0.8
0.6
0.4
0.2
60
50
40
30
20
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Relative Responsivity
70
Power Supply Rejection Ratio — dB
1.4
al
id
TA = 25°C
lv
1.6
10
0
300
500
700
900
λ − Wavelength − nm
0
1100
102
10
Figure 2
ca
5
ni
4
3
0
10
Copyright E 2007, TAOS Inc.
4
0.6
0.5
0.4
0.3
0.1
20
30
40
50
60
TA − Free-Air Temperature − °C
Te
0
0.7
0.2
ch
V D− Dark Voltage − mV
6
Normalized Response
0.8
7
1
NORMALIZED RESPONSE
vs
ANGULAR DISPLACEMENT
0.9
8
2
106
1.0
VDD = 5 V
9
105
Figure 3
DARK VOLTAGE
vs
FREE-AIR TEMPERATURE
10
103
104
f − Frequency − Hz
70
0
−90
−70
−50
−30 −10
10
30
50
Angular Displacement − 5
Figure 4
70
90
Figure 5
The LUMENOLOGY r Company
r
www.taosinc.com
r
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
APPLICATION INFORMATION
PCB Pad Layout
Suggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 6.
1.0
1.0
al
id
1.0
1.0
am
lc s
on A
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nt
st
il
1.0
lv
3.2
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
Te
ch
ni
ca
Figure 6. Suggested SM Package PCB Layout
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
www.taosinc.com
r
5
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
MECHANICAL DATA
The device is supplied in a clear plastic three-lead sidelooker through-hole package (S).
PACKAGE S
PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE
TOP VIEW
1.64
FRONT VIEW
lv
R 0.90
am
lc s
on A
te G
nt
st
il
2.60
al
id
4.60
SIDE VIEW
2.30
0.15
Note B
1.80
4.60
1
1.56
0.42
Pb
Lead Free
Available
ch
2y2
ni
ca
14.86 + 0.50
0.47 TYP
0.42
Te
NOTES: A. All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.
B. Dimension is to center of lens arc, which is located below the package face.
C. The integrated photodiode active area is round with a typical diameter of 0.75 mm and is typically located in the center of the lens
and 0.97 mm below the top of the lens surface.
D. Index of refraction of clear plastic is 1.55.
E. Lead finish for TSL257: solder dipped, 63% Sn/37% Pb. Lead finish for TSL257−LF: solder dipped, 100% Sn.
F. This drawing is subject to change without notice.
Figure 7. Package S — Single-In-Line Side-Looker Package Configuration
Copyright E 2007, TAOS Inc.
6
The LUMENOLOGY r Company
r
www.taosinc.com
r
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
MECHANICAL DATA
PACKAGE SM
PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGE
TOP VIEW
FRONT VIEW
lv
R 0.90
1.64
am
lc s
on A
te G
nt
st
il
2.60
al
id
4.60
SIDE VIEW
0.15 Note B
2.30
1.80
4.60
0.62 + 0.10
0.62 +0.10
−0.15
5.73 + 0.50
Pb
ch
2y2
0.47 TYP
0.42
Lead Free
All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.
Dimension is to center of lens arc, which is located below the package face.
The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.
Index of refraction of clear plastic is 1.55.
Lead finish for TSL257SM−LF: solder dipped, 100% Sn.
This drawing is subject to change without notice.
Te
NOTES: A.
B.
C.
D.
E.
F.
2.59
0.42
ni
ca
1.00
1.97
Figure 8. Package SM — Surface Mount Side-Looker Package Configuration
The LUMENOLOGY r Company
Copyright E 2007, TAOS Inc.
r
www.taosinc.com
r
7
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
LEAD-FREE (Pb-FREE) and GREEN STATEMENT
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id
Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current
RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous
materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified
lead-free processes.
Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and
Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).
am
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on A
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st
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lv
Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and
belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,
and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate
information from third parties. TAOS has taken and continues to take reasonable steps to provide representative
and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and
chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other
limited information may not be available for release.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
ca
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
Te
ch
ni
LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced
Optoelectronic Solutions Incorporated.
Copyright E 2007, TAOS Inc.
8
The LUMENOLOGY r Company
r
www.taosinc.com
r