SFH628A / SFH6286 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Low Input Current Features • • • • High Common-mode Interference Immunity Isolation Test Voltage, 5300 VRMS Low Coupling Capacitance Good CTR Linearity Depending on Forward Current • Low CTR Degradation • High Collector-emitter Voltage, VCEO = 55 V 1 A/C 1 4 C C/A 2 3 E 1 i179080 Agency Approvals • UL - File No. E52744 System Code J Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation to an operation voltage of 400 VRMS or DC. • DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Applications Order Information Telecom Industrial Controls Battery Powered Equipment Office Machines Part Description The SFH628A (DIP) and SFH6286 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Remarks SFH628A-2 CTR 63 - 200 %, DIP-4 SFH628A-3 CTR 100 - 320 %, DIP-4 SFH628A-4 CTR 160 - 500 %, DIP-4 SFH6286-2 CTR 63 - 200 %, SMD-4 SFH6286-3 CTR 100 - 320 %, SMD-4 SFH6286-4 CTR 160 - 500 %, SMD-4 SFH628A-2-X006 CTR 63 - 200 %, DIP-4 400 mil (option 6) SFH628A-3-X006 CTR 100 - 320 %, DIP-4 400 mil (option 6) SFH628A-3-X007 CTR 100 - 320 %, SMD-4 (option 7) SFH628A-4-X006 CTR 160 - 500 %, DIP-4 400 mil (option 6) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition DC Forward current Surge forward current Document Number 83722 Rev. 1.4, 26-Apr-04 t ≤ 10 µs Symbol Value Unit IF ± 50 mA IFSM ± 2.5 A www.vishay.com 1 SFH628A / SFH6286 VISHAY Vishay Semiconductors Output Symbol Value Unit Collector-emitter voltage Parameter Test condition VCE 55 V Emitter-collector voltage VEC 7.0 V IC 50 mA Collector current tp ≤ 1.0 ms IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Creepage distance ≥ 7.0 mm Clearance ≥ 7.0 mm Insulation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDEO 303, part 1 175 Power dissipation Coupler Parameter Test condition Isolation test voltage between emitter and detector, refer to Climate DIN 40046, part2, Nov.74 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω ≥ Storage temperature range Tstg - 55 to +150 °C Ambient temperature range Tamb - 55 to +100 °C Tj 100 °C Tsld 260 °C Junction temperature Soldering temperature max. 10 s. Dip Soldering distance to seating plane ≥ 1.5 mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 5.0 mA Test condition VF 1.1 1.5 Capacitance VR = 0 V, f = 1.0 MHz CO 45 pF Rthja 1070 K/W Thermal resistance Symbol Min Unit V Output Parameter Test condition Collector-emitter leakage current VCE = 10 V Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz Thermal resistance www.vishay.com 2 Symbol ICEO Min Typ. Max Unit 10 200 nA CCE 7 pF Rthja 500 K/W Document Number 83722 Rev. 1.4, 26-Apr-04 SFH628A / SFH6286 VISHAY Vishay Semiconductors Coupler Parameter Test condition Collector-emitter saturation voltage Part Symbol Typ. Max Unit IF = ± 1.0 mA, IC = 0.5 mA SFH628A-2 SFH6286-2 VCEsat Min 0.25 0.4 V IF = ± 1.0 mA, IC = 0.8 mA SFH628A-3 SFH6286-3 VCEsat 0.25 0.4 V IF = ± 1.0 mA, IC = 1.25 mA SFH628A-4 SFH6286-4 VCEsat 0.25 0.4 V Typ. Max Unit 200 % Current Transfer Ratio Parameter Test condition IC/IF Part Symbol Min IF = ± 1.0 mA, VCE = 0.5 V SFH628A-2 SFH6286-2 CTR 63 IF = ± 0.5 mA, VCE = 1.5 V SFH628A-2 SFH6286-2 CTR 32 IF = ± 1.0 mA, VCE = 0.5 V SFH628A-3 SFH6286-3 CTR 100 IF = ± 0.5 mA, VCE = 1.5 V SFH628A-3 SFH6286-3 CTR 50 IF = ± 1.0 mA, VCE = 0.5 V SFH628A-4 SFH6286-4 CTR 160 IF = ± 0.5 mA, VCE = 1.5 V SFH628A-4 SFH6286-4 CTR 80 100 % 320 160 % % 500 250 % % Switching Characteristics Max Unit Turn-on time Parameter VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω Test condition ton 6.0 µs Rise time VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω tr 3.5 µs Turn-off time VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω toff 5.5 µs Fall time VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω tf 5.0 µs ± IF RL Symbol Min Typ. VCC Input Pulse IC 10% Output Pulse 90% 47 Ω tr ton isfh618a_11 tf t off isfh618a_12 Fig. 1 Test Circuit Document Number 83722 Rev. 1.4, 26-Apr-04 Fig. 2 Test Circuit and Waveforms www.vishay.com 3 SFH628A / SFH6286 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) VCE = 0.5 V, CTR = f (TA) IF = 1.0 mA, VF = f (TA) isfh618a_01 isfh618a_04 Fig. 3 Current Transfer Ratio (typ.) Fig. 6 Diode Forward Voltage (typ.) VCE = 0.5 V, CTR = f (TA) TA = 25°C, f = 1.0 MHz, CEE = f (VCE) isfh618a_01 isfh618a_02 isfh618a_05 Fig. 4 Current Transfer Ratio (typ.) Fig. 7 Transistor Capacitance TA = 25°C, CE = f (VCE, IF) TA = 25°C, VF = f (IF) isfh618a_03 Fig. 5 Diode Forward Voltage (typ.) www.vishay.com 4 isfh618a_06 Fig. 8 Output Characteristics Document Number 83722 Rev. 1.4, 26-Apr-04 SFH628A / SFH6286 VISHAY Vishay Semiconductors IF = f (TA) isfh618a_07 Fig. 9 Permissible Forward Current Diode Ptot = f (TA) isfh618a_08 Fig. 10 Permissible Power Dissipation TA = 25°C, IF = 1.0 mA, VCC = 5.0 V, tON, tR, tOFF, tF, = f (RL) isfh618a_09 Fig. 11 Switching times (typ.) Document Number 83722 Rev. 1.4, 26-Apr-04 www.vishay.com 5 SFH628A / SFH6286 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .031 (.79) typ. .050 (1.27) typ. .030 (.76) .045 (1.14) .300 (7.62) typ. .130 (3.30) .150 (3.81) 10° 4° typ. .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) .018 (.46) .022 (.56) i178027 .230 (5.84) .250 (6.35) 3°–9° .110 (2.79) .130 (3.30) .008 (.20) .012 (.30) Package Dimensions in Inches (mm) SMD pin one ID .030 (.76) .100 (2.54) R .010 (.25) .070 (1.78) .255 (6.48) .268 (6.81) .315 (8.00) min .435 (11.05) 3 4 .375 (9.52) .305 (10.03) .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .060 (1.52) .296 (7.52) .312 (7.90) 10° .031 (.79) typ. .010 (.25) typ. .130 (3.30) .150 (3.81) ISO Method A i178029 4° typ. 1.00 (2.54)typ. .050 (1.27) typ. www.vishay.com 6 .0098 (.249) .035 (.102) Lead coplanarity .004 max. .315 (8.00) min. .020 (.508) .040 (1.02) 3°–7° Document Number 83722 Rev. 1.4, 26-Apr-04 SFH628A / SFH6286 VISHAY Vishay Semiconductors Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .315 (8.0) MIN. 18487 Document Number 83722 Rev. 1.4, 26-Apr-04 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 7 SFH628A / SFH6286 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83722 Rev. 1.4, 26-Apr-04