MOTOROLA MMDJ3P03BJT

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by MMDJ3P03BJT/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
SO–8 for Surface Mount Applications
• Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
DUAL BIPOLAR
POWER TRANSISTOR
PNP SILICON
30 VOLTS
3 AMPERES
• High DC Current Gain — hFE
= 140 (Min) @ IC = 1.2 Adc
= 125 (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.24 Vdc (Max) @ IC = 1.2 Adc
= 0.60 Vdc (Max) @ IC = 5.0 Adc
• Miniature SO–8 Surface Mount Package – Saves Board Space
CASE 751–05, Style 16
(SO–8)
C
E
B
C
E
B
Schematic
Emitter–1
1
8
Collector–1
Base–1
2
7
Collector–1
Emitter–2
3
6
Collector–2
Base–2
4
5
Collector–2
Top View
Pinout
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCB
45
Vdc
VCEO
30
Vdc
VEB
± 8.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Base Current — Continuous
IB
1.0
Adc
TJ, Tstg
– 55 to + 150
_C
Symbol
Max
Unit
RθJC
62.5
_C/W
Total Power Dissipation @ TA = 25_C(1)
Derate above 25_C
PD
2.0
16
Watts
mW/_C
Maximum Temperature for Soldering
TL
260
_C
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction to Ambient(1)
(1) Mounted on 2” sq. FR–4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
 Motorola, Inc. 1997
Motorola Bipolar Power Transistor Device Data
1
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MMDJ3P03BJT
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
—
—
—
—
20
—
—
10
—
—
—
0.14
—
—
0.20
0.24
0.60
—
—
1.40
—
—
1.10
140
125
—
180
—
—
—
100
—
—
135
—
—
105
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200
VCEO(sus)
Vdc
µAdc
ICER
)
Emitter Cutoff Current
(VBE = 5.0 Vdc)
µAdc
IEBO
ON CHARACTERISTICS(1)
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
DC Current Gain
(IC = 1.2 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
Vdc
Vdc
Vdc
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 8.0 Vdc)
Cib
Current–Gain — Bandwidth Product(2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
pF
pF
fT
MHz
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
2
Motorola Bipolar Power Transistor Device Data
MMDJ3P03BJT
1.0
VBE(sat)
150°C
25°C
–55°C
100
V, VOLTAGE (V)
h FE , DC CURRENT GAIN
1000
10
0.1
VCE(sat)
VCE = 2 V
IC/IB = 125
1.0
0.01
1.0
0.1
0.01
10
1.0
0.1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
1.00
1000
IC = 0.8 A
IC = 1.2 A
0.75
CAPACITANCE (pF)
VCE(sat) , COLLECTOR–EMITTER VOLTAGE (V)
0.01
0.50
0.25
Cob
100
IC = 0.5 A
0
10
1.0
100
10
0.1
10
1.0
IB, BASE CURRENT (mA)
VR, REVERSE BIAS (V)
Figure 3. Collector Saturation Region
Figure 4. Capacitance
100
R thja(t) , EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1.0
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
CHIP
JUNCTION
NORMALIZED TO qja AT 10 s
0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W
177.14 F
0.01
0.0253 F
0.1406 F
0.5064 F
2.9468 F
SINGLE PULSE
AMBIENT
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Thermal Response
Motorola Bipolar Power Transistor Device Data
3
MMDJ3P03BJT
PACKAGE DIMENSIONS
–A–
M
1
4
R
4X
0.25 (0.010)
–B–
X 45 _
B
M
5
P
8
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
J
M_
C
F
G
–T–
K
SEATING
PLANE
8X
D
0.25 (0.010)
M
T B
S
A
S
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.18
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
STYLE 16:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
EMITTER, DIE #1
BASE, DIE #1
EMITTER, DIE #2
BASE, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #2
COLLECTOR, DIE #1
COLLECTOR, DIE #1
CASE 751–05
ISSUE P
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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4
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Motorola Bipolar Power Transistor Device
Data
MMDJ3P03BJT/D