MOTOROLA BU406

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by BU406/D
SEMICONDUCTOR TECHNICAL DATA
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV’s and CRT’s.
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7 AMPERES
NPN SILICON
POWER TRANSISTORS
60 WATTS
150 and 200 VOLTS
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v
v
High Voltage: VCEV = 330 or 400 V
Fast Switching Speed: tf = 750 ns (max)
Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
Packaged in Compact JEDEC TO–220AB
MAXIMUM RATINGS
Rating
Symbol
BU406
BU407
Unit
Collector–Emitter Voltage
VCEO
200
150
Vdc
Collector–Emitter Voltage
VCEV
400
330
Vdc
Collector–Base Voltage
VCBO
400
330
Vdc
Emitter Base Voltage
VEBO
6
Vdc
Collector Current — Continuous
Peak Repetitive
Peak (10 ms)
IC
7
10
15
Adc
Base Current
IB
4
Adc
Total Device Dissipation, TC = 25_C
Derate above TC = 25_C
PD
60
0.48
Watts
W/_C
TJ, Tstg
– 65 to 150
_C
Operating and Storage
Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.08
_C/W
Thermal Resistance, Junction to Ambient
RθJA
70
_C/W
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
TL
275
_C
CASE 221A–06
TO–220AB
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
200
150
—
—
—
—
Vdc
—
—
—
—
—
—
5
0.1
1
IEBO
—
—
1
mAdc
Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
VCE(sat)
—
—
1
Vdc
Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
VBE(sat)
—
—
1.2
Vdc
VEC
—
—
2
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage(1)
(IC = 100 mAdc, IB = 0)
BU406
BU407
Collector Cutoff Current
(VCE = Rated VCEV, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C)
Emitter Cutoff Current
(VEB = 6 Vdc, IC = 0)
ICES
BU406, BU407
mAdc
ON CHARACTERISTICS (1)
Forward Diode Voltage (IEC = 5 Adc) “D” only
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
1%.
Volts
(continued)
REV 2
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
fT
10
—
—
MHz
Cob
—
80
—
pF
tc
—
—
0.75
µs
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(VCC = 40 Vdc, IC = 5 Adc,
IB1 = IB2 = 0.5 Adc, L = 150 µH)
100
50
30
TJ = 100°C
25°C
VCE = 5 V
20
10
0.1
2
3
0.2 0.3 0.5
0.7 1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
70
10
5
7
10
dc
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1
0.1
TC = 25°C
2
3
BU407
BU406
5 7 10
50 70 100
20 30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
200
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*BU406/D*
BU406/D