Alternate Source/ Second Source Photodiodes VTD34 (BPW34 INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These photodiodes are designed to provide excellent sensitivity at low levels of irradiance. Storage Temperature: Operating Temperature: -20°C to 80°C -20°C to 80°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD34 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC TC ISC VOC TC VOC Short Circuit Current 1000 Lux, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 1000 Lux, 2850 K VOC Temperature Coefficient 2850 K Typ. 50 300 Max. 70 µA .20 %/°C 365 mV -2.0 mV/°C ID Dark Current H = 0, VR = 10 V 2 CJ Junction Capacitance @ 1 MHz, VR = 0 V 60 pF 50 nsec 0.60 A/W tR/tF Rise/Fall Time @ 1 kΩ Lead VR = 10 V, 833 nm SR Sensitivity @ Peak λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp.-50% Resp. Pt. NEP Noise Equivalent Power D* 400 1100 nm nm ±50 Degrees 4.8 x 10 -14 W ⁄ Hz V 5.7 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA nA 900 40 Specific Detectivity 30 x 1012 cm Hz / W Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 73