Alternate Source/ Second Source Photodiodes VTD31AA (CLD31AA INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD31AA SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. Typ. Max. Short Circuit Current H = 5 mW/cm2, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 5 mW/cm2, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C ID Dark Current H = 0, VR = 15 V 50 nA CJ Junction Capacitance H = 0, V = 0 V 500 pF SR Sensitivity @ Peak ISC TC ISC VOC TC VOC λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp.-50% Resp. Pt. 150 225 .20 .55 400 A/W 1150 nm 860 nm ±60 Degrees 5 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA µA %/°C V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 72