VISHAY TCED1100

TCED1100(G) up to TCED4100
Vishay Telefunken
Optocoupler with Photodarlington Output
Description
The TCED1100/ TCED2100/ TCED4100 consists of
a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
14925
D For appl. class I – IV at mains voltage ≤ 300 V
D For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Coll. Emitter
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D VDE 0884
Anode Cath.
4 PIN
Optocoupler for electrical safety requirements
8 PIN
D IEC 950/EN 60950
16 PIN
14580
Office machines (applied for reinforced
isolation for mains voltage ≤ 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65
C
Safety for mains-operated electronic and
related household apparatus
Order Instruction
Ordering Code
CTR Ranking
1)
TCED1100/ TCED1100G
600%
TCED2100
600%
TCED4100
600%
1) G = Leadform 10.16 mm; G is not market on the body
234
Remarks
4 Pin = Single channel
8 Pin = Dual channel
16 Pin = Quad channel
Rev. A3, 11–Jan–99
TCED1100(G) up to TCED4100
Vishay Telefunken
Features
D Creepage current resistance according to
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 11992
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
D CSA (C–UL) 1577 recognized,
file number E-76222 – Double Protection
D VDE 0884, Certificate number 115667
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
D Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
VDE 0303/IEC 112
Comparative Tracking Index: CTI ≥ 175
D Thickness through insulation ≥ 0.75 mm
D Internal creepage distance > 4 mm
General features:
D Isolation materials according to UL94-VO
D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D Low temperature coefficient of CTR
D G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCED2100/ TCED4100 optional;
suffix letter ‘G’ is not marked on the optocoupler
D Coupling System U
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
6
60
1.5
100
125
Unit
V
mA
A
mW
°C
Symbol
VCEO
VECO
IC
ICM
PV
Tj
Value
35
7
80
100
150
125
Unit
V
V
mA
mA
mW
°C
Symbol
VIO
Ptot
Tamb
Tstg
Tsd
Value
5
250
–40 to +100
–55 to +125
260
Unit
kV
mW
°C
°C
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
tp/T = 0.5, tp ≤ 10 ms
Tamb ≤ 25°C
Coupler
Parameter
Test Conditions
AC isolation test voltage (RMS)
t = 1 min
Total power dissipation
Tamb ≤ 25°C
Operating ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case t ≤ 10 s
Rev. A3, 11–Jan–99
235
TCED1100(G) up to TCED4100
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
IF = 20 mA
VR = 0 V, f = 1 MHz
Symbol
VF
Cj
Min.
Typ.
1.15
50
Max.
1.4
Unit
V
pF
Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 10 V, If = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
32
7
Typ.
Max.
15
100
Unit
V
V
nA
Test Conditions
IF = 20 mA, IC = 5 mA
Symbol
VCEsat
Min.
Typ.
Max.
1
Unit
V
VCE = 5 V, IF = 10 mA,
RL = 100 W
f = 1 MHz
fc
10
kHz
Ck
0.3
pF
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off
current
Coupler
Parameter
Collector emitter
saturation voltage
Cut-off frequency
Coupling capacitance
Current Transfer Ratio (CTR)
Parameter
IC/IF
236
Test Conditions
VCE = 2 V, IF = 1 mA
Type
TCED1100(G)/
TCED2100/
TCED4100
Symbol
CTR
Min.
6.0
Typ.
8.0
Max.
Unit
Rev. A3, 11–Jan–99
TCED1100(G) up to TCED4100
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Isi
Value
130
Unit
mA
Test Conditions
Tamb ≤ 25°C
Symbol
Psi
Value
265
Unit
mW
Test Conditions
Symbol
VIOTM
Tsi
Value
8
150
Unit
kV
°C
Output (Detector)
Parameters
Power dissipation
Coupler
Parameters
Rated impulse voltage
Safety temperature
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Partial discharge test voltage – 100%, ttest = 1 s
Routine test
Partial discharge
g test voltage
g – tTr = 60 s, ttest = 10 s,
Lot test (sample test)
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V,
Tamb = 100°C
VIO = 500 V,
Tamb = 150°C
Symbol
Vpd
Min.
1.6
VIOTM
Vpd
RIO
RIO
8
1.3
1012
1011
RIO
109
Typ.
Max.
Unit
kV
kV
kV
W
W
W
VIOTM
300
V
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Photodarlington
Psi ( mW )
250
200
VPd
150
VIOWM
VIORM
100
IR-Diode
Isi ( mA )
50
P
tot
– Total Power Dissipation ( mW )
(construction test only)
0
t3 ttest t4
0
0
14887
25
50
75
100
125
Tamb – Ambient Temperature ( °C )
Figure 1. Derating diagram
Rev. A3, 11–Jan–99
150
t1
13930
tTr = 60 s
t2
tstres
t
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
237
TCED1100(G) up to TCED4100
Vishay Telefunken
Switching Characteristics
Parameter
Rise time
Fall time
IF
0
Test Conditions
VCC = 2 V, IC = 10 mA, RL = 100 W ((see figure
g
3))
Adjusted through
IC= 10 mA ; input amplitude
RG = 50 W
tp
0.01
T
t1 = 1 ms
Typ.
300
250
Unit
ms
ms
96 11698
+ VCC
IF
Symbol
tr
tf
IF
0
+
t
tp
Channel I
IC
50 W
Channel II
RL
14779
Figure 3. Test circuit
w
w
Oscilloscope
RI
CI 1 M W
20 pF
100%
90%
10%
0
t
tr
td
ts
ton
tp
tion
td
tr
ton (= td + tr)
tf
toff
pulse duradelay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 4. Switching times
238
Rev. A3, 11–Jan–99
TCED1100(G) up to TCED4100
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
1.3
100000
IF=10mA
1.1
1.0
0.9
0.8
0
1000
100
10
1
20
40
60
80
100
Tamb – Ambient Temperature ( °C
)
14389
VCE=10V
IF=0
10000
ICEO– Collector Dark Current,
with open Base ( nA )
VF – Forward Voltage ( V )
1.2
20
Figure 5. Forward Voltage vs. Ambient Temperature
30
40
50
60
70
80
90
100
Tamb – Ambient Temperature ( °C
)
14392
Figure 8. Collector Dark Current vs.
Ambient Temperature
1000.0
VCE=2V
100.0
IC – Collector Current ( mA )
I F – Forward Current ( mA )
1000.0
10.0
1.0
100.0
10.0
1.0
0.1
0
0.1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
14390
1.0
10.0
100.0
IF – Forward Current ( mA )
14393
Figure 6. Forward Current vs. Forward Voltage
Figure 9. Collector Current vs. Forward Current
1.4
1.3
100.0
VCE=5V
IF=1mA
IF=2mA
IC – Collector Current ( mA )
CTR rel – Relative Current Transfer Ratio
1.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
14391
Tamb – Ambient Temperature ( °C
)
Figure 7. Relative Current Transfer Ratio vs.
Ambient Temperature
Rev. A3, 11–Jan–99
1mA
10.0
0.5m
A
0.1m
A
0.1
0.1
14394
0.2mA
1.0
1.0
10.0
100.0
VCE – Collector Emitter Voltage ( V
)
Figure 10. Collector Current vs. Collector Emitter Voltage
239
TCED1100(G) up to TCED4100
10000
1.1
CTR – Current Transfer Ratio ( % )
VCEsat – Collector Emitter Saturation Voltage ( V )
Vishay Telefunken
CTR=200
%
1.0
100
%
50
%
25
%
0.9
0.8
0.7
0.6
1
14395
10
Figure 11. Collector Emitter Saturation Voltage vs.
Collector Current
Pin 1 Indication
1000
100
10
0.1
100
IC – Collector Current ( mA )
VCE=2V
14396
1.0
10.0
100.0
IF – Forward Current ( mA )
Figure 13. Current Transfer Ratio vs. Forward Current
Type
ED1100
820UTK63
15084
Date
Code
(YM)
Coupling
System
Indicator
Company
Logo
Production
Location
Figure 12. Marking example
240
Rev. A3, 11–Jan–99
TCED1100(G) up to TCED4100
Vishay Telefunken
Dimensions of TCED1100 in mm
weight:
creepage distance:
air path:
y
y
ca. 0.25 g
6 mm
6 mm
after mounting on PC board
96 12231
Dimensions of TCED1100G in mm
Leadform 10.16 mm (G_type)
weight:
creepage distance:
air path:
y
y
ca. 0.25 g
8 mm
8 mm
after mounting on PC board
9612234
Rev. A3, 11–Jan–99
241
TCED1100(G) up to TCED4100
Vishay Telefunken
Dimensions of TCED2100 in mm
y
y
weight:
creepage distance:
air path:
ca. 0.5 g
6 mm
6 mm
after mounting on PC board
96 12228
Dimensions of TCED4100 in mm
weight:
creepage distance:
air path:
y
y
ca. 1.1 g
6 mm
6 mm
after mounting on PC board
96 12227
242
Rev. A3, 11–Jan–99