TCED1100(G) up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14925 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Coll. Emitter Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. VDE Standards These couplers perform safety functions according to the following equipment standards: D VDE 0884 Anode Cath. 4 PIN Optocoupler for electrical safety requirements 8 PIN D IEC 950/EN 60950 16 PIN 14580 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 C Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 1) TCED1100/ TCED1100G 600% TCED2100 600% TCED4100 600% 1) G = Leadform 10.16 mm; G is not market on the body 234 Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Features D Creepage current resistance according to Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 11992 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 – Double Protection D CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection D VDE 0884, Certificate number 115667 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175 D Thickness through insulation ≥ 0.75 mm D Internal creepage distance > 4 mm General features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCED2100/ TCED4100 optional; suffix letter ‘G’ is not marked on the optocoupler D Coupling System U Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 35 7 80 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 5 250 –40 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t ≤ 10 s Rev. A3, 11–Jan–99 235 TCED1100(G) up to TCED4100 Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 20 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.15 50 Max. 1.4 Unit V pF Test Conditions IC = 1 mA IE = 100 mA VCE = 10 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. 15 100 Unit V V nA Test Conditions IF = 20 mA, IC = 5 mA Symbol VCEsat Min. Typ. Max. 1 Unit V VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz fc 10 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Current Transfer Ratio (CTR) Parameter IC/IF 236 Test Conditions VCE = 2 V, IF = 1 mA Type TCED1100(G)/ TCED2100/ TCED4100 Symbol CTR Min. 6.0 Typ. 8.0 Max. Unit Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge g test voltage g – tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 8 1.3 1012 1011 RIO 109 Typ. Max. Unit kV kV kV W W W VIOTM 300 V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Photodarlington Psi ( mW ) 250 200 VPd 150 VIOWM VIORM 100 IR-Diode Isi ( mA ) 50 P tot – Total Power Dissipation ( mW ) (construction test only) 0 t3 ttest t4 0 0 14887 25 50 75 100 125 Tamb – Ambient Temperature ( °C ) Figure 1. Derating diagram Rev. A3, 11–Jan–99 150 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 237 TCED1100(G) up to TCED4100 Vishay Telefunken Switching Characteristics Parameter Rise time Fall time IF 0 Test Conditions VCC = 2 V, IC = 10 mA, RL = 100 W ((see figure g 3)) Adjusted through IC= 10 mA ; input amplitude RG = 50 W tp 0.01 T t1 = 1 ms Typ. 300 250 Unit ms ms 96 11698 + VCC IF Symbol tr tf IF 0 + t tp Channel I IC 50 W Channel II RL 14779 Figure 3. Test circuit w w Oscilloscope RI CI 1 M W 20 pF 100% 90% 10% 0 t tr td ts ton tp tion td tr ton (= td + tr) tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 4. Switching times 238 Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1.3 100000 IF=10mA 1.1 1.0 0.9 0.8 0 1000 100 10 1 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 14389 VCE=10V IF=0 10000 ICEO– Collector Dark Current, with open Base ( nA ) VF – Forward Voltage ( V ) 1.2 20 Figure 5. Forward Voltage vs. Ambient Temperature 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 14392 Figure 8. Collector Dark Current vs. Ambient Temperature 1000.0 VCE=2V 100.0 IC – Collector Current ( mA ) I F – Forward Current ( mA ) 1000.0 10.0 1.0 100.0 10.0 1.0 0.1 0 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 14390 1.0 10.0 100.0 IF – Forward Current ( mA ) 14393 Figure 6. Forward Current vs. Forward Voltage Figure 9. Collector Current vs. Forward Current 1.4 1.3 100.0 VCE=5V IF=1mA IF=2mA IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio 1.5 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30–20–10 0 10 20 30 40 50 60 70 80 90 100 14391 Tamb – Ambient Temperature ( °C ) Figure 7. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A3, 11–Jan–99 1mA 10.0 0.5m A 0.1m A 0.1 0.1 14394 0.2mA 1.0 1.0 10.0 100.0 VCE – Collector Emitter Voltage ( V ) Figure 10. Collector Current vs. Collector Emitter Voltage 239 TCED1100(G) up to TCED4100 10000 1.1 CTR – Current Transfer Ratio ( % ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Telefunken CTR=200 % 1.0 100 % 50 % 25 % 0.9 0.8 0.7 0.6 1 14395 10 Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Pin 1 Indication 1000 100 10 0.1 100 IC – Collector Current ( mA ) VCE=2V 14396 1.0 10.0 100.0 IF – Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current Type ED1100 820UTK63 15084 Date Code (YM) Coupling System Indicator Company Logo Production Location Figure 12. Marking example 240 Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Dimensions of TCED1100 in mm weight: creepage distance: air path: y y ca. 0.25 g 6 mm 6 mm after mounting on PC board 96 12231 Dimensions of TCED1100G in mm Leadform 10.16 mm (G_type) weight: creepage distance: air path: y y ca. 0.25 g 8 mm 8 mm after mounting on PC board 9612234 Rev. A3, 11–Jan–99 241 TCED1100(G) up to TCED4100 Vishay Telefunken Dimensions of TCED2100 in mm y y weight: creepage distance: air path: ca. 0.5 g 6 mm 6 mm after mounting on PC board 96 12228 Dimensions of TCED4100 in mm weight: creepage distance: air path: y y ca. 1.1 g 6 mm 6 mm after mounting on PC board 96 12227 242 Rev. A3, 11–Jan–99