K814P/ K824P/ K844P Vishay Semiconductors Optocoupler with Phototransistor Output Description The K814P/ K824P/ K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes (reversed polarity) in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Feature phones, answering machines, PABX, fax machines 14925 Coll. Emitter D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) of typical 100% D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, 13947 Features Anode Cath. 4 PIN file number E-76222 8 PIN 16 PIN D CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection D Coupling System U C Order Instruction Ordering Code K814P K824P K844P Rev. A4, 11–Jan–99 CTR Ranking < 20% < 20% < 20% Remarks 4 Pin Single channel 8 Pin Dual channel 16 Pin Quad channel 1 (9) K814P/ K824P/ K844P Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 ±60 ±1.5 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO 1) Ptot Tamb Value 5 250 –40 to +100 Unit kV mW °C Tstg Tsd –55 to +125 260 °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s 1) Related to standard climate 23/50 DIN 50014 2 (9) Rev. A4, 11–Jan–99 K814P/ K824P/ K844P Vishay Semiconductors Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Reverse current Test Conditions IF = ±50 mA VR = ±6 V Symbol VF IR Min. Typ. 1.25 Max. 1.6 10 Unit V mA Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 100 Unit V V nA Test Conditions IF = ± 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V IF = ± 10 mA, VCE = 5 V, RL = 100 f = 1 MHz fc 100 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance W Typ. Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = ± 5 mA Rev. A4, 11–Jan–99 Type Symbol CTR Min. 0.2 Typ. Max. 3.0 Unit 3 (9) K814P/ K824P/ K844P Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 ((see figure g 1)) W VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure g 2)) Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Unit s s s s s s s s m m m m m m m m +5V IF IC = 2 mA ; W RG = 50 tp T = 0.01 tp = 50 s adjusted through input amplitude 96 11698 m IF Channel I 50 W 100 W Channel II Oscilloscope +5V IF = 10 mA IC 10% 0 IC W td m ts ton 50 W W 1k Channel II t tr RG = 50 tp T = 0.01 tp = 50 s Channel I t tp 100% 90% Figure 1. Test circuit, non-saturated operation IF 0 W RL > 1 M CL < 20 pF 13343 0 Symbol td tr tf ts ton toff ton toff Oscilloscope W RL > 1 M CL < 20 pF tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time 13344 Figure 2. Test circuit, saturated operation 4 (9) Figure 3. Switching times Rev. A4, 11–Jan–99 K814P/ K824P/ K844P Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 100 IC – Collector Current ( mA ) I F – Forward Current ( mA ) 100.0 10.0 1.0 0.1 VCE=5V 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 100 10 Figure 8. Collector Current vs. Forward Current 2.0 100 20mA IC – Collector Current ( mA ) VCE=5V IF=5mA 1.5 1.0 0.5 0 –25 1 IF – Forward Current ( mA ) 95 11027 Figure 5. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 100 75 Figure 7. Collector Dark Current vs. Ambient Temperature 1000.0 95 11025 50 Tamb – Ambient Temperature ( °C ) 95 11026 Figure 4. Total Power Dissipation vs. Ambient Temperature 25 IF=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A4, 11–Jan–99 0.1 95 10985 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage 5 (9) K814P/ K824P/ K844P 1.0 t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 0 Saturated Operation VS=5V RL=1k 40 W 30 toff 20 10 ton 0 1 100 10 IC – Collector Current ( mA ) 95 11028 0 5 100 10 1 Non Saturated Operation VS=5V RL=100 8 W ton 6 toff 4 2 0 0.1 95 11029 20 10 m VCE=5V 15 Figure 12. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( s ) 1000 10 IF – Forward Current ( mA ) 95 11031 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 50 1 100 10 IF – Forward Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current Pin 1 Indication 0 95 11030 2 4 6 10 IC – Collector Current ( mA ) Figure 13. Turn on / off Time vs. Collector Current Type K814P 820UTK63 15083 Date Code (YM) 6 (9) Company Production Coupling Logo Location System Indicator Figure 14. Marking example Rev. A4, 11–Jan–99 K814P/ K824P/ K844P Vishay Semiconductors Dimensions of K814P in mm y y weight: ca. 0.25 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14789 Dimensions of K824P in mm y y weight: ca. 0.55 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14784 Rev. A4, 11–Jan–99 7 (9) 14784 K814P/ K824P/ K844P Vishay Semiconductors Dimensions of K844P in mm y y weight: ca. 1.0 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14783 8 (9) Rev. A4, 11–Jan–99 K814P/ K824P/ K844P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A4, 11–Jan–99 9 (9) This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.