Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTOR IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Ω, (SEE) RAD HARD HEXFET 600Volt, 0.60Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHM2C50SE IRHM7C50SE BV DSS RDS(on) ID 600V 0.60Ω 10.4A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Pre-Radiation Absolute Maximum Ratings Parameter IRHM2C50SE, IRHM7C50SE Units I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight 10.4 6.5 41.6 150 1.2 ±20 500 10.4 15 3.0 A W W/K V mJ A mJ V/ns -55 to 150 oC 300 (0.063 in (1.6 mm) from case for 10 sec) 9.3 (typical) To Order g Previous Datasheet Index Next Data Sheet IRHM2C50SE, IRHM7C50SE Devices Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage 600 — — V ∆BVDSS/∆TJ — 0.45 — V/°C VGS(th) gfs IDSS Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current — — 2.5 3.0 — — — — — — — — 0.60 0.65 4.5 — 50 250 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 8.7 100 -100 150 30 75 55 190 210 130 — LS Internal Source Inductance — 8.7 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2700 300 61 — — — Ω V S( ) Ω RDS(on) Typ Max Units µA nA nC ns nH pF Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =6.5A VGS = 12V, ID = 10.4A VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 6.5A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 10.4A VDS = Max Rating x 0.5 VDD = 300V, ID = 10.4A, RG = 2.35Ω Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 10.4 41.6 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.62 1200 16 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 10.4A, VGS = 0V Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/µs VDD ≤ 30V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max — — — — 0.83 — 48 0.21 — To Order Units Test Conditions K/W Typical socket mount Previous Datasheet Index Next Data Sheet IRHM2C50SE, IRHM7C50SE Devices Radiation Characteristics Radiation Performance of Rad Hard HEXFETs of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Every manufacturing lot is tested in a low dose rate Rads (Si) no changes in limits are specified in DC (total dose) environment per MlL-STD-750, test parameters. method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a High dose rate testing may be done on a special 12 VDSS bias condition equal to 80% of the device rated request basis using a dose rate up to 1 x 10 Rads voltage per note 7. Pre- and post-radiation limits of (Si)/Sec. the devices irradiated to 0.5 X 105 Rads(Si) and 1 x International Rectifier radiation hardened HEXFETs 105 Rads (Si) are identical and are presented in Table have been characterized in neutron and heavy ion 1, column 1, IRHM2C50SE and IRHM7C50SE, re- Single Event Effects (SEE) environments. Single Event spectively. The values in Table 1 will be met for either Effects characterization is shown in Table 3. International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Table 1. Low Dose Rate IRHM2C50SE 50K Rads (Si) IRHM7C50SE 100K Rads (Si) Units Min Max Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate Test Conditions 600 2.5 — — — — — 4.5 100 -100 50 0.60 nA µA Ω VGS = 0V, I D = 1.0mA VGS = VDS, I D = 1.0mA VGS = 20V VGS = -20V VDS =0.8 x Max Rating, VGS=0V VGS = 12V, ID =6.5A — 1.62 V TC = 25°C, IS = 10.4A,VGS = 0V V 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Min Typ Max — — 480 Drain-to-Source Voltage IPP di/dt L1 — — 20 Table 3. Single Event Effects 6.4 — — — 16 — Min Typ Max Units Test Conditions — — 480 V Applied drain-to-source voltage during gamma-dot — 6.4 — A Peak radiation induced photo-current — — 2.3 A/µsec Rate of rise of photo-current 137 — — µH Circuit inductance required to limit di/dt Parameter Typical Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS 600 V Ni 28 1 x 105 ~35 480 -5 To Order Previous Datasheet Index Next Data Sheet IRHM2C50SE, IRHM7C50SE Devices Radiation Characteristics Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50V, Starting T J = 25°C, EAS = [0.5 * L * ( ) * [BVDSS/(BV DSS-V DD)] Peak IL = 10.4A, VGS = 12V, 25 ≤ RG ≤ 200Ω ISD ≤ 10.4A, di/dt ≤ 130A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — TO-254AA 3 2 1 Conforms to JEDEC Outline TO-254AA Legend: 1 Drain 2 Source 3 Gate Notes: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. All dimensions are shown in millimeters (inches). 3. Optional leadforms available in either orientation Optional Leadforms for Outline TO-254AA CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/96 To Order