Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1392 IRH9250 AVALANCHE ENERGY AND dv/dt RATED HEXFET® TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.315Ω Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. Product Summary Part Number BVDSS RDS(on) ID IRH9250 -200V 0.315Ω -14A Features: n n n n n n n P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. n They are well-suited for applications such as switching power supplies, motor controls, inver ters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Pre-Radiation Absolute Maximum Ratings Parameter IRH9250 Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current -14 -9 -56 A VGS EAS I AR Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current 150 1.2 ±20 500 -14 W W/K V mJ A EAR dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt 15 -5.5 V/ns TJ TSTG Operating Junction Storage Temperature Range ID @ VGS = -12V, TC = 25°C I D @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C Lead Temperature Weight Notes: See page 4 mJ -55 to 150 oC 300 (0.063 in. (1 .6mm) from case for 10s) 11.5 (typical) To Order g Previous Datasheet Index Next Data Sheet IRH9250 Device Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units -200 — — -0.10 — — — — -2.0 4.0 — — — — — — — — 0.315 0.33 -4.0 — -25 -250 V V/°C IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 8.7 -100 100 200 45 85 60 240 225 175 — LS Internal Source Inductance — 8.7 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 310 55 — — — Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC Test Conditions VGS = 0V, ID = -1.0 mA Reference to 25°C, ID = -1.0 mA VGS = -12V, ID = -9A VGS = -12V, ID = -14A VDS = VGS, ID = -1.0 mA VDS > -15V, IDS = -9A VDS = 0.8 x Max. Rating,VGS = 0V VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125°C VGS = - 20V VGS = 20V VGS = -12V, ID = -14A VDS = Max. Rating x 0.5 VDD = -50V, ID = -14A, RG = 2.35Ω ns nH pF Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = -25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter IS I SM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units — — -14 — — -56 A Test Conditions Modified MOSFET symbol showing the integral Reverse p-n junction rectifier. — — -3.6 V Tj = 25°C, IS = -14A, VGS = 0V — — 740 ns Tj = 25°C, IF = -14A, di/dt ≤ -100 A/µs — — 7.0 µC VDD ≤ -14V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Notes: See page 4 Min. Typ. Max. Units Test Conditions — — — Typical socket mount — — 0.12 0.83 30 — To Order K/W Previous Datasheet Index Next Data Sheet IRH9250 Device Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at Inter national Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and postradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Table 1. Low Dose Rate International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier PChannel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects environment and the results are shown in Table 3. IRH9250 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage VSD High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. 100K Rads (Si) Min. Max. Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) ➀ Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 10 5 Rads (Si), no change in limits are specified in DC parameters. Units Test Conditions V µA Ω VGS = 0V, ID = -1.0 mA VGS = VDS, ID = -1.0 mA VGS = -20V VGS = 20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, ID = -9A V TC = 25°C, I S = -14A,VGS = 0V -200 -2.0 — — — — — -4.0 -100 100 -25 0.315 nA — -3.6 Table 2. High Dose Rate 1011 Rads (Si)/sec1012 Rads (Si)/sec Parameter VDSS Min. Typ Max. Min.Typ. Max. Units Drain-to-Source Voltage — IPP di/dt L1 — — 27 — -160 — — -160 Test Conditions V Applied drain-to-source voltage during gamma-dot -100 — — -100 — A Peak radiation induced photo-current — -800 — — -160 A/µsec Rate of rise of photo-current — — 0.5 — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ion/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS -200 V Ni 28 1 x 105 ~41 -200 5 To Order Previous Datasheet Index Next Data Sheet IRH9250 Device Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting T J = 25°C, EAS = [0.5 * L * (I2L) * [BVDSS/(BVDSS-VDD)] Peak IL = -14A, VGS = -12V, 25 ≤ RG ≤ 200Ω ISD ≤ -14A, di/dt ≤ -140 A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35ý Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Radiation Characteristics Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. 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