BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation f (MHz) VDS (V) CW 861 to 961 28 PL (W) Gp (dB) (typ) ηD (%) ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%) (typ) (typ) (typ) 120 19 57 - - - - −72 [2] 1.5 - - - −31 GSM EDGE 861 to 961 28 48 (AV) 19 40 −61 [1] 2-tone 120 (PEP) 19 46 - 861 to 961 28 [1] ACPR400 at 30 kHz resolution bandwidth [2] ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: ◆ Load power = 48 W (AV) ◆ Gain = 19 dB (typ) ◆ Efficiency = 40 % (typ) ◆ ACPR400 = −61 dBc (typ) ◆ ACPR600 = −72 dBc (typ) ◆ EVMrms = 1.5 % (typ) ■ Easy power control ■ Excellent ruggedness ■ High efficiency ■ Excellent thermal stability ■ Designed for broadband operation (800 MHz to 1000 MHz) ■ Internally matched for ease of use BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 1.3 Applications ■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol BLF4G10-120 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym039 BLF4G10S-120 (SOT502B) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Type number Package Name Description Version BLF4G10-120 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF4G10S-120 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 2 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 °C Min Typ Max Unit PL = 60 W - 0.76 0.85 K/W PL = 120 W - 0.65 0.74 K/W 6. Characteristics Table 6: Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 2.5 3.1 3.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 2.7 3.2 3.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 27 30 - A IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 10 A - 9.0 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A - 0.09 - Ω Crs feedback capacitance - 2.5 - pF VGS = 0 V; VDS = 28 V; f = 1 MHz 7. Application information Table 7: Application information Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz. VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(PEP) = 120 W 18 19 - dB IRL input return loss PL(PEP) = 120 W - −8 −5 dB ηD drain efficiency PL(PEP) = 120 W 44 46 - % IMD3 third order intermodulation distortion PL(PEP) = 120 W - −31 −27 dBc 7.1 Ruggedness in class-AB operation The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 850 mA; PL = 120 W (CW); f = 960 MHz. 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 3 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 001aac400 20.5 80 ηD (%) Gp (dB) 001aac401 20 60 ηD (%) Gp (dB) 60 19.5 19 18.5 40 40 ηD Gp ηD Gp 18 20 20 17.5 16.5 0 50 100 0 200 150 17 0 100 PL (W) PL(PEP) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 001aac402 0 0 300 200 IMD (dBc) Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 001aac403 0 IMD3 (dBc) IMD3 −20 −20 IMD5 −40 −40 IMD7 −60 2 1 4 3 −60 −80 −80 0 100 200 300 0 PL(PEP) (W) 100 200 300 PL(PEP) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; Tcase = 25 °C; f = 960 MHz (1) IDq = 650 mA (2) IDq = 750 mA (3) IDq = 850 mA (4) IDq = 950 mA Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 4 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 001aac404 20 Gp (dB) 60 ηD (%) Gp 19 001aac405 −55 ACPR (dBc) ACPR400 40 −65 20 −75 0 −85 ηD 18 17 0 20 40 60 80 PL(AV) (W) 0 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values 001aac406 4 ACPR600 Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as functions of average load power; typical values 001aac407 −57 4 ACPR (dBc) EVMrms (%) EVM (%) 3 −59 2 −61 1 −63 3 ACPR400 2 EVMrms 1 −65 0 0 20 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz 0 0 40 ηD (%) 60 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 7. GSM EDGE rms EVM as a function of average load power; typical values Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as functions of drain efficiency; typical values 9397 750 14549 Product data sheet 20 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 5 of 14 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x Philips Semiconductors 8. Test information 9397 750 14549 Product data sheet C18 C17 C9 +VG R2 L4 C8 C13 L1 C3 C4 C2 L5 C1 L2 R3 VDD C10 C12 Q1 L3 L6 L11 RF in L7 L8 L9 L10 C6 C14 C7 C5 C16 L12 RF out C15 C11 001aac408 Fig 9. Class-AB test circuit for operation at 960 MHz UHF power LDMOS transistor 6 of 14 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. See Table 8 for list of components. BLF4G10-120; BLF4G10S-120 Rev. 01 — 10 January 2006 R1 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x Philips Semiconductors 9397 750 14549 Product data sheet C18 L4 C9 R1 R2 L1 +VG C17 R3 C8 C4 C10 VDD C13 C12 C3 L6 L7 L9 L8 L11 L10 C14 C1 L12 C16 C15 C6 C7 C5 C11 The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Duroid dielectric (εr = 2.5), thickness 31 mils. The other side is unetched and serves as a ground plane. See Table 8 for list of components. Fig 10. Component layout for 960 MHz test circuit UHF power LDMOS transistor 7 of 14 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 001aac409 BLF4G10-120; BLF4G10S-120 Rev. 01 — 10 January 2006 L5 L3 L2 C2 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor Table 8: List of components (see Figure 9 and Figure 10) Component Description Dimensions multilayer ceramic chip capacitor 30 pF C2, C12 multilayer ceramic chip capacitor [1] 47 pF C3, C13 multilayer ceramic chip capacitor [1] 300 pF multilayer ceramic chip capacitor [1] 6.2 pF multilayer ceramic chip capacitor [1] 7.5 pF [2] 0.8 pF to 8 pF C1 C4 C5 C6, C7, C11, trimmer capacitors (Tekelec) C15 C8 multilayer ceramic chip capacitor C9 tantalum capacitor 20 nF 10 µF; 35 V C10 multilayer ceramic chip capacitor [1] C14 multilayer ceramic chip capacitor [1] 5.1 pF multilayer ceramic chip capacitor [1] 56 pF C17 tantalum capacitor [3] 10 µF; 35 V C18 electrolytic capacitor 220 µF; 63 V L1 ferrite bead (long) grade 4S2 L2 3 turn inductor ID 4.5 mm, Cu-wire diameter 1 mm L3 4 turn inductor ID 3 mm, Cu-wire diameter 1 mm L4 ferrite bead (short) C16 6.8 pF grade 4S2 stripline [4] Z0 = 50 Ω (W × L) 2 mm × 17.2 mm L6 stripline [4] Z0 = 50 Ω (W × L) 2 mm × 25.4 mm L7 stripline [4] Z0 = 25 Ω (W × L) 5.6 mm × 17.4 mm stripline [4] Z0 = 10 Ω (W × L) 16 mm × 10.2 mm stripline [4] Z0 = 10 Ω (W × L) 16 mm × 10.2 mm L10 stripline [4] Z0 = 25 Ω (W × L) 5.6 mm × 17.4 mm L11 stripline [4] Z0 = 50 Ω (W × L) 2 mm × 25.4 mm L12 stripline [4] Z0 = 50 Ω (W × L) 2 mm × 17.2 mm R1 SMD resistor 8.2 Ω; 0.1 W R2 SMD resistor 4.7 Ω; 0.1 W R3 metal film resistor 10 Ω; 0.6 W L5 L8 L9 [1] American Technical Ceramics type 100B or capacitor of same quality. [2] Mounted flat. [3] Low ESR. [4] Striplines are on a double copper-clad Ultralam 2000 PCB (εr = 2.5); thickness = 31 mils. 9397 750 14549 Product data sheet Value [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 8 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 9 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502B Fig 12. Package outline SOT502B 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 10 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 9: Abbreviations Acronym Description ACPR Adjacent Channel Power Ratio CDMA Code Division Multiple Access CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution ESR Equivalent Series Resistance EVM Error Vector Magnitude GSM Global System for Mobile communications IDq quiescent drain current LDMOS Laterally Diffused Metal Oxide Semiconductor PEP Peak Envelope Power RF Radio Frequency SMD Surface-Mount Device VSWR Voltage Standing-Wave Ratio 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 11 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 11. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BLF4G10-120_ 4G10S-120_1 20060110 Product data sheet - 9397 750 14549 - 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 12 of 14 BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14549 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 13 of 14 Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14549 Published in The Netherlands