PHILIPS BLF4G10-120

BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1:
Typical performance
RF performance at Th = 25 °C in a common base class-AB test circuit.
Mode of
operation
f
(MHz)
VDS
(V)
CW
861 to 961 28
PL
(W)
Gp
(dB)
(typ)
ηD
(%)
ACPR400 ACPR600 EVMrms IMD3
(dBc)
(dBc)
(dBc)
(%)
(typ)
(typ)
(typ)
120
19
57
-
-
-
-
−72 [2]
1.5
-
-
-
−31
GSM EDGE 861 to 961 28
48 (AV)
19
40
−61 [1]
2-tone
120 (PEP) 19
46
-
861 to 961 28
[1]
ACPR400 at 30 kHz resolution bandwidth
[2]
ACPR600 at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an IDq of 850 mA:
◆ Load power = 48 W (AV)
◆ Gain = 19 dB (typ)
◆ Efficiency = 40 % (typ)
◆ ACPR400 = −61 dBc (typ)
◆ ACPR600 = −72 dBc (typ)
◆ EVMrms = 1.5 % (typ)
■ Easy power control
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (800 MHz to 1000 MHz)
■ Internally matched for ease of use
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2:
Pinning
Pin
Description
Simplified outline
Symbol
BLF4G10-120 (SOT502A)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym039
BLF4G10S-120 (SOT502B)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF4G10-120
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G10S-120
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+15
V
ID
drain current
-
12
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
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Product data sheet
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Rev. 01 — 10 January 2006
2 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-case)
thermal resistance from
junction to case
Tcase = 80 °C
Min
Typ
Max
Unit
PL = 60 W
-
0.76
0.85
K/W
PL = 120 W
-
0.65
0.74
K/W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
Min
Typ
Max Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
2.5
3.1
3.5
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 900 mA
2.7
3.2
3.7
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
3
µA
IDSX
drain cut-off current
VGS = VGS(th) + 6 V;
VDS = 10 V
27
30
-
A
IGSS
gate leakage current
VGS = 15 V; VDS = 0 V
-
-
300
nA
gfs
forward transconductance
VDS = 10 V; ID = 10 A
-
9.0
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 6 V;
ID = 6 A
-
0.09 -
Ω
Crs
feedback capacitance
-
2.5
-
pF
VGS = 0 V; VDS = 28 V;
f = 1 MHz
7. Application information
Table 7:
Application information
Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz.
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(PEP) = 120 W
18
19
-
dB
IRL
input return loss
PL(PEP) = 120 W
-
−8
−5
dB
ηD
drain efficiency
PL(PEP) = 120 W
44
46
-
%
IMD3
third order intermodulation
distortion
PL(PEP) = 120 W
-
−31
−27
dBc
7.1 Ruggedness in class-AB operation
The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 850 mA; PL = 120 W (CW); f = 960 MHz.
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Product data sheet
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Rev. 01 — 10 January 2006
3 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
001aac400
20.5
80
ηD
(%)
Gp
(dB)
001aac401
20
60
ηD
(%)
Gp
(dB)
60
19.5
19
18.5
40
40
ηD
Gp
ηD
Gp
18
20
20
17.5
16.5
0
50
100
0
200
150
17
0
100
PL (W)
PL(PEP) (W)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
001aac402
0
0
300
200
IMD
(dBc)
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
001aac403
0
IMD3
(dBc)
IMD3
−20
−20
IMD5
−40
−40
IMD7
−60
2
1
4
3
−60
−80
−80
0
100
200
300
0
PL(PEP) (W)
100
200
300
PL(PEP) (W)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
VDS = 28 V; Tcase = 25 °C; f = 960 MHz
(1) IDq = 650 mA
(2) IDq = 750 mA
(3) IDq = 850 mA
(4) IDq = 950 mA
Fig 3. Intermodulation distortion as a function of peak
envelope load power; typical values
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
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Rev. 01 — 10 January 2006
4 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
001aac404
20
Gp
(dB)
60
ηD
(%)
Gp
19
001aac405
−55
ACPR
(dBc)
ACPR400
40
−65
20
−75
0
−85
ηD
18
17
0
20
40
60
80
PL(AV) (W)
0
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
20
40
60
80
PL(AV) (W)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
001aac406
4
ACPR600
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
functions of average load power; typical values
001aac407
−57
4
ACPR
(dBc)
EVMrms
(%)
EVM
(%)
3
−59
2
−61
1
−63
3
ACPR400
2
EVMrms
1
−65
0
0
20
40
60
80
PL(AV) (W)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
0
0
40
ηD (%)
60
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
Fig 7. GSM EDGE rms EVM as a function of average
load power; typical values
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14549
Product data sheet
20
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
5 of 14
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Philips Semiconductors
8. Test information
9397 750 14549
Product data sheet
C18
C17
C9
+VG
R2
L4
C8
C13
L1
C3
C4
C2
L5
C1
L2
R3
VDD
C10 C12
Q1
L3
L6
L11
RF in
L7
L8
L9
L10
C6
C14
C7
C5
C16
L12
RF out
C15
C11
001aac408
Fig 9. Class-AB test circuit for operation at 960 MHz
UHF power LDMOS transistor
6 of 14
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
See Table 8 for list of components.
BLF4G10-120; BLF4G10S-120
Rev. 01 — 10 January 2006
R1
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
Philips Semiconductors
9397 750 14549
Product data sheet
C18
L4
C9
R1
R2 L1
+VG
C17
R3
C8
C4 C10
VDD
C13
C12
C3
L6
L7
L9
L8
L11
L10 C14
C1
L12
C16
C15
C6
C7
C5
C11
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Duroid dielectric (εr = 2.5), thickness 31 mils.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.
Fig 10. Component layout for 960 MHz test circuit
UHF power LDMOS transistor
7 of 14
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
001aac409
BLF4G10-120; BLF4G10S-120
Rev. 01 — 10 January 2006
L5
L3
L2
C2
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
Table 8:
List of components (see Figure 9 and Figure 10)
Component Description
Dimensions
multilayer ceramic chip capacitor
30 pF
C2, C12
multilayer ceramic chip capacitor
[1]
47 pF
C3, C13
multilayer ceramic chip capacitor
[1]
300 pF
multilayer ceramic chip capacitor
[1]
6.2 pF
multilayer ceramic chip capacitor
[1]
7.5 pF
[2]
0.8 pF to 8 pF
C1
C4
C5
C6, C7, C11, trimmer capacitors (Tekelec)
C15
C8
multilayer ceramic chip capacitor
C9
tantalum capacitor
20 nF
10 µF; 35 V
C10
multilayer ceramic chip capacitor
[1]
C14
multilayer ceramic chip capacitor
[1]
5.1 pF
multilayer ceramic chip capacitor
[1]
56 pF
C17
tantalum capacitor
[3]
10 µF; 35 V
C18
electrolytic capacitor
220 µF; 63 V
L1
ferrite bead (long)
grade 4S2
L2
3 turn inductor ID 4.5 mm,
Cu-wire diameter 1 mm
L3
4 turn inductor ID 3 mm,
Cu-wire diameter 1 mm
L4
ferrite bead (short)
C16
6.8 pF
grade 4S2
stripline
[4]
Z0 = 50 Ω
(W × L) 2 mm × 17.2 mm
L6
stripline
[4]
Z0 = 50 Ω
(W × L) 2 mm × 25.4 mm
L7
stripline
[4]
Z0 = 25 Ω
(W × L) 5.6 mm × 17.4 mm
stripline
[4]
Z0 = 10 Ω
(W × L) 16 mm × 10.2 mm
stripline
[4]
Z0 = 10 Ω
(W × L) 16 mm × 10.2 mm
L10
stripline
[4]
Z0 = 25 Ω
(W × L) 5.6 mm × 17.4 mm
L11
stripline
[4]
Z0 = 50 Ω
(W × L) 2 mm × 25.4 mm
L12
stripline
[4]
Z0 = 50 Ω
(W × L) 2 mm × 17.2 mm
R1
SMD resistor
8.2 Ω; 0.1 W
R2
SMD resistor
4.7 Ω; 0.1 W
R3
metal film resistor
10 Ω; 0.6 W
L5
L8
L9
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
Mounted flat.
[3]
Low ESR.
[4]
Striplines are on a double copper-clad Ultralam 2000 PCB (εr = 2.5); thickness = 31 mils.
9397 750 14549
Product data sheet
Value
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
8 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
9397 750 14549
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
9 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502B
Fig 12. Package outline SOT502B
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Product data sheet
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Rev. 01 — 10 January 2006
10 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 9:
Abbreviations
Acronym
Description
ACPR
Adjacent Channel Power Ratio
CDMA
Code Division Multiple Access
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
ESR
Equivalent Series Resistance
EVM
Error Vector Magnitude
GSM
Global System for Mobile communications
IDq
quiescent drain current
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PEP
Peak Envelope Power
RF
Radio Frequency
SMD
Surface-Mount Device
VSWR
Voltage Standing-Wave Ratio
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Rev. 01 — 10 January 2006
11 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
11. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BLF4G10-120_
4G10S-120_1
20060110
Product data sheet
-
9397 750 14549
-
9397 750 14549
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
12 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
14. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
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Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 10 January 2006
13 of 14
Philips Semiconductors
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
17. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
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Date of release: 10 January 2006
Document number: 9397 750 14549
Published in The Netherlands