Order this document by BD801/D SEMICONDUCTOR TECHNICAL DATA 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 100 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current IC 8.0 Adc Base Current IB 3.0 Adc Total Device Dissipation TC = 25_C Derate above 25_C PD 65 522 Watts mW/_C TJ, Tstg – 55 to + 150 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit θJC 1.92 _C/W Thermal Resistance, Junction to Case CASE 221A–06 TO–220AB ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 100 — Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO 0.1 — mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc DC Current Gain (IC = 1.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) hFE 30 15 — — Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) (IC = 0.05 Adc, IB = 0) Collector–Emitter Saturation Voltage* (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) — 1.0 Vdc Base–Emitter On Voltage* (IC = 3.0 Adc, VCE = 2.0 Vdc) VBE(on) — 1.6 Vdc Current–Gain Bandwidth Product (IC = 0.25 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 — MHz * Pulse Test: Pulse Width 300 µs. Duty Cycle 2.0%. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BD801 IC, COLLECTOR CURRENT (AMP) 10 100 µs 5 TJ = 150°C dc The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power–temperature derating must be observed for both steady state and pulse power conditions. 5 ms 1 0.5 0.1 0.05 BD801 5 10 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1 100 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area 2.0 1.6 IC = 10 mA 100 mA 1.0 A 3.0 A 1.2 0.8 TJ = 25°C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 30 20 50 70 200 100 300 500 Figure 2. Collector Saturation Region 1.8 3.0 VCE = 2.0 V 150°C TJ = 25°C 1.7 1.6 2.0 VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 5.0 25°C – 55°C 1.0 0.7 0.5 1.4 1.2 1.0 0.3 0.6 0.2 0.4 0.2 0.1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 4.0 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.03 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMPS) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 3. Normalized DC Current Gain 2.0 3.0 5.0 Figure 4. “On” Voltage 1.0 D = 0.5 0.5 D = 0.2 0.3 0.2 D = 0.1 0.1 D = 0.05 D = 0.01 0.5 0.03 D = 0 (SINGLE PULSE) 0.02 0.01 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME or PULSE WIDTH (ms) 20 30 50 70 100 200 300 500 700 1000 Figure 5. Thermal Response 2 Motorola Bipolar Power Transistor Device Data BD801 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 3 BD801 Motorola reserves the right to make changes without further notice to any products herein. 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