ONSEMI MJ15012

Order this document
by MJ15011/D
SEMICONDUCTOR TECHNICAL DATA
The MJ15011 and MJ15012 are PowerBase power transistors designed for
high–power audio, disk head positioners, and other linear applications. These devices
can also be used in power switching circuits such as relay or solenoid drivers,
dc–to–dc converters or inverters.
• High Safe Operating Area (100% Tested)
1.2 A @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V
VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A
• For Low Distortion Complementary Designs
*Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
250 VOLTS
200 WATTS
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v
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
250
Vdc
Collector–Emitter Voltage
VCEX
250
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
10
15
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2
5
Adc
Emitter Current — Continuous
— Peak (1)
IE
IEM
12
20
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
200
1.14
Watts
W/_C
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
0.875
_C/W
TL
265
_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
250
—
Vdc
Collector Cutoff Current
(VCE = 200 Vdc)
ICEO
—
1
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 15 Vdc)
ICEX
—
500
µAdc
Emitter Cutoff Current
(VBE = 5 Vdc)
IEBO
—
500
µAdc
20
5
100
—
—
—
0.8
25
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 100 mA)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 4 Adc, VCE = 2 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.2 Adc)
(IC = 4 Adc, IB = 0.4 Adc)
VCE(sat)
Vdc
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 2 Vdc)
VBE(on)
—
2
Vdc
Cob
—
750
pF
5
1.4
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, f = 1 MHz)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 0.5 s)
(VCE = 100 Vdc, t = 0.5 s)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
IS/b
Adc
2%.
10
200
VCE = 2 Vdc
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
100
50
20
MJ15011
MJ15012
10
5
2
0.1
0.2
0.5
1
2
IC, COLLECTOR CURRENT
Figure 1. DC Current Gain
2
5
10
5
2
dc
1
0.5
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
0.1
15
20
50
70
100
150 200
30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area
Motorola Bipolar Power Transistor Device Data
300
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*MJ15011/D*
MJ15011/D