ONSEMI BUX85

Order this document
by BUX85/D
SEMICONDUCTOR TECHNICAL DATA
2 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS
50 WATTS
The BUX85 is designed for high voltage, high speed power switching applications
like converters, inverters, switching regulators, motor control systems.
SPECIFICATIONS FEATURES:
• VCEO(sus) 450 V
• VCES(sus) 1000 V
• Fall time = 0.3 µs (typ) at IC = 1.0 A
• VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A
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x
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Symbol
BUX84
BUX85
Unit
Collector–Emitter Voltage
Rating
VCEO(sus)
400
450
Vdc
Collector–Emitter Voltage
VCES
800
1000
Vdc
Emitter Base Voltage
VEBO
5
IC
ICM
2
3.0
IB
IBM
0.75
1.0
Collector Current
— Continuous
— Peak (1)
Vdc
Adc
Base Current
— Continuous
— Peak (1)
Adc
Reverse Base Current — Peak
IBM
1
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
50
400
Watts
mW/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.5
_C/W
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
TL
275
_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Maximum Lead Temperature for Soldering Purpose:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BUX85
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x
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
—
—
Vdc
—
—
—
—
0.2
1.5
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, (L = 25 mH) See fig. 1
Collector Cutoff Current
(VCES = Rated Value)
(VCES = Rated Value, TC = 125_C)
ICES
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
—
—
1
mAdc
hFE
30
50
—
—
—
—
—
—
0.8
1
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.1 Adc, VCE = 5 V)
Collector–Emitter Saturation Voltage
(IC = 0.3 Adc, IB = 30 mAdc)
(IC = 1 Adc, IB = 200 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VBE(sat)
—
—
1.1
Vdc
fT
4
—
—
MHz
ton
—
0.3
0.5
µs
ts
—
2
3.5
µs
tf
—
0.3
—
µs
tf
—
—
1.4
µs
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 1 0 Vdc, f = 1 MHz)
SWITCHING CHARACTERISTICS
Turn–on Time
Storage Time
Fall Time
Fall Time
VCC = 250 Vdc, IC = 1 A
IB1 = 0.2 A, IB2 = 0.4 A
See fig. 2
Same above cond. at TC = 95_C
(1) Pulse Test: PW = 300 µs, Duty Cycle
2
2%.
Motorola Bipolar Power Transistor Device Data
BUX85
+6 V
L
250
HOR
OSCILLOSCOPE
VERT
~
30 – 60 Hz
4V
+
100 Ω
250
IC
(mA)
100
MIN VCEOsust
0
VCEO (V)
1Ω
Figure 1. Test Circuit for VCEOsust
tr ≤ 30 ns
IBon
90
IB %
10
t
IBoff
WAVEFORM
ICon
90
IC %
10
0
t
tf
ts
ton
+ 25 V
BD139
680 µF
250 Ω
200 Ω
100 µF
T
VCC
250 V
100 Ω
T.U.T.
VIM
30 Ω
tµ
100 Ω
VI
50 Ω
680 µF
BD140
Figure 2. Switching Times/Test Circuit
Motorola Bipolar Power Transistor Device Data
3
BUX85
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
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4
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Motorola Bipolar Power Transistor Device Data
*BUX85/D*
BUX85/D