PNP Silicon Transistors SMBT 5086 SMBT 5087 For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 5086 SMBT 5087 s2P s2Q Q62702-M0002 Q68000-A8319 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 50 Collector-base voltage VCB0 50 Emitter-base voltage VEB0 3 Collector current IC 50 mA Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 5086 SMBT 5087 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 50 – – Collector-base breakdown voltage IC = 100 µA V(BR)CB0 50 – – Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 3 – – Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0, TA = 150 ˚C ICB0 – – – – – – 10 50 20 DC current gain IC = 100 µA, VCE = 5 V hFE IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V SMBT 5086 SMBT 5087 SMBT 5086 SMBT 5087 SMBT 5086 SMBT 5087 V nA nA µA – 150 250 150 250 150 250 – – – – – – 500 800 – – – – Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VCEsat – – 0.3 V Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VBEsat – – 0.85 Transition frequency IC = 0.5 mA, VCE = 5 V, f = 100 MHz fT 40 – – MHz Output capacitance, VCB = 5 V, f = 1 MHz Cobo – – 4 pF Small-signal current gain IC = 1 mA, VCE = 5 V, f = 1 kHz IC = 1 mA, VCE = 5 V, f = 1 kHz hfe AC characteristics SMBT 5086 SMBT 5087 Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, RS = 3 kΩ Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 150 250 – – 600 900 – – – – 3 2 dB dB – – – – 3 2 dB dB NF SMBT 5086 SMBT 5087 IC = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz, RS = 10 kΩ SMBT 5086 SMBT 5087 1) – 2 SMBT 5086 SMBT 5087 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBT 5086 SMBT 5087 Base-emitter saturation voltage IC = f (VBE sat), hFE = 40 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 SMBT 5086 SMBT 5087 Collector cutoff current ICB0 = f (TA) Noise figure NF = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Noise figure NF = f (IC) IC = 0.2 mA, RS = 2 kΩ,VCE = 5 V Noise figure NF = f (IC) VCE = 5 V, f = 120 kHz Semiconductor Group 5 SMBT 5086 SMBT 5087 Noise figure NF = f (IC) VCE = 5 V, f = 1 kHz Semiconductor Group Noise figure NF = f (IC) VCE = 5 V, f = 10 kHz 6