INFINEON SMBT5086

PNP Silicon Transistors
SMBT 5086
SMBT 5087
For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
SMBT 5086
SMBT 5087
s2P
s2Q
Q62702-M0002
Q68000-A8319
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
50
Collector-base voltage
VCB0
50
Emitter-base voltage
VEB0
3
Collector current
IC
50
mA
Total power dissipation, TS = 71 ˚C
Ptot
330
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
V
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤
310
Junction - soldering point
Rth JS
≤
240
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBT 5086
SMBT 5087
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
V(BR)CE0
50
–
–
Collector-base breakdown voltage
IC = 100 µA
V(BR)CB0
50
–
–
Emitter-base breakdown voltage, IE = 10 µA
V(BR)EB0
3
–
–
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 35 V, IE = 0
VCB = 35 V, IE = 0, TA = 150 ˚C
ICB0
–
–
–
–
–
–
10
50
20
DC current gain
IC = 100 µA, VCE = 5 V
hFE
IC = 1 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
SMBT 5086
SMBT 5087
SMBT 5086
SMBT 5087
SMBT 5086
SMBT 5087
V
nA
nA
µA
–
150
250
150
250
150
250
–
–
–
–
–
–
500
800
–
–
–
–
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
VCEsat
–
–
0.3
V
Base-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
VBEsat
–
–
0.85
Transition frequency
IC = 0.5 mA, VCE = 5 V, f = 100 MHz
fT
40
–
–
MHz
Output capacitance, VCB = 5 V, f = 1 MHz
Cobo
–
–
4
pF
Small-signal current gain
IC = 1 mA, VCE = 5 V, f = 1 kHz
IC = 1 mA, VCE = 5 V, f = 1 kHz
hfe
AC characteristics
SMBT 5086
SMBT 5087
Noise figure
IC = 100 µA, VCE = 5 V, f = 1 kHz,
RS = 3 kΩ
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
150
250
–
–
600
900
–
–
–
–
3
2
dB
dB
–
–
–
–
3
2
dB
dB
NF
SMBT 5086
SMBT 5087
IC = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz,
RS = 10 kΩ
SMBT 5086
SMBT 5087
1)
–
2
SMBT 5086
SMBT 5087
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V
Semiconductor Group
3
SMBT 5086
SMBT 5087
Base-emitter saturation voltage
IC = f (VBE sat), hFE = 40
Collector-emitter saturation voltage
IC = f (VCE sat), hFE = 40
Collector current IC = f (VBE)
VCE = 1 V
DC current gain hFE = f (IC)
VCE = 1 V
Semiconductor Group
4
SMBT 5086
SMBT 5087
Collector cutoff current ICB0 = f (TA)
Noise figure NF = f (VCE)
IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
Noise figure NF = f (IC)
IC = 0.2 mA, RS = 2 kΩ,VCE = 5 V
Noise figure NF = f (IC)
VCE = 5 V, f = 120 kHz
Semiconductor Group
5
SMBT 5086
SMBT 5087
Noise figure NF = f (IC)
VCE = 5 V, f = 1 kHz
Semiconductor Group
Noise figure NF = f (IC)
VCE = 5 V, f = 10 kHz
6