NLAS323 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the US8 package. The use of advanced 0.6 micron CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. • • • • • • • • • • • On Resistance is 20 Typical at 5.0 V Matching is < 1.0 Between Sections 2.0 to 6.0 V Operating Range Ultra Low < 5.0 pC Charge Injection Ultra Low Leakage < 1.0 nA at 5.0 V, 25 C Wide Bandwidth > 200 MHz, −3.0 dB 2000 V ESD (Human Body Model) Ron Flatness 6.0 at 5.0 V US8 Package Independent, Positive Enable Pb−Free Package is Available* http://onsemi.com MARKING DIAGRAM 8 8 1 A4 D US8 US SUFFIX CASE 493 1 A4 = Device Code D = Date Code PIN ASSIGNMENT NO1 1 NO1 COM1 1 8 2 7 VCC IN1 IN2 3 6 COM2 GND 4 5 NO2 2 COM1 3 IN2 4 GND 5 NO2 6 COM2 7 IN1 8 VCC FUNCTION TABLE Figure 1. Pinout On/Off Enable Input State of Analog Switch L H Off On ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 6 1 Publication Order Number: NLAS323/D NLAS323 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage 0.5 to 7.0 V VI DC Input Voltage 0.5 to 7.0 V VO DC Output Voltage 0.5 to 7.0 V IIK DC Input Diode Current VI < GND 50 mA IOK DC Output Diode Current VO < GND 50 mA IO DC Output Sink Current 50 mA ICC DC Supply Current per Supply Pin 100 mA IGND DC Ground Current per Ground Pin 100 mA TSTG Storage Temperature Range 65 to 150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage (Note 1) 260 °C 150 °C 250 °C/W 250 mW Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 150 N/A V Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC Positive DC Supply Voltage 2.0 5.5 V VIN Digital Input Voltage (Enable) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (NO, COM) GND VCC V TA Operating Temperature Range, All Package Types −55 +125 °C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V Vcc = 3.3 V + 0.3 V Vcc = 5.0 V + 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS323 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol Parameter Condition VCC −55 to 25C <85C <125C Unit VIH Minimum High−Level Input Voltage, Enable Inputs 2.0 3.0 4.5 5.5 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 V VIL Maximum Low−Level Input Voltage, Enable Inputs 2.0 3.0 4.5 5.5 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 V IIN Maximum Input Leakage Current, Enable Inputs VIN = 5.5 V or GND 0 V to 5.5 V +0.1 +1.0 +1.0 A ICC Maximum Quiescent Supply Current (per package) Enable and VIS = VCC or GND 5.5 1.0 1.0 2.0 A DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Max Limit Symbol Parameter Condition VCC −55 to 25C <85C <125C Unit RON Maximum On Resistance (Figures 8 − 12) VIN = VIH VIS = VCC to GND IIsI = <10.0mA 3.0 4.5 5.5 45 30 25 50 35 30 55 40 35 RFLAT(ON) On Resistance Flatness VIN = VIH IIsI = <10.0 mA VIS = 1 V, 2 V, 3.5 V 4.5 4.0 4.0 5.0 INO(OFF) Off Leakage Current, Pin 2 (Figure 3) 5.5 1.0 10 100 nA ICOM(OFF) Off Leakage Current, Pin 1 (Figure 3) 5.5 1.0 10 100 nA VIN = VIL VNO = 1.0 V, VCOM = 4.5 V or VCOM = 1.0 V and VNO 4.5 V VIN = VIL VNO = 4.5 V or 1.0 V VCOM = 1.0 V or 4.5 V AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit VCC Symbol Parameter Test Conditions (V) −55 to 25C Min <85C Typ Max Min Typ <125C Max Min Typ Max Unit tON Turn−On Time RL = 300 CL = 35 pF (Figures 4, 5, and 13) 2.0 3.0 4.5 5.5 7.0 5.0 4.5 4.5 14 10 9.0 9.0 16 12 11 11 16 12 11 11 ns tOFF Turn−Off Time RL = 300 CL = 35 pF (Figures 4, 5, and 13) 2.0 3.0 4.5 5.5 11.0 7.0 5.0 5.0 22 14 10 10 24 16 12 12 24 16 12 12 ns Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM(OFF) CCOM(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8.0 10 10 20 http://onsemi.com 3 pF NLAS323 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC Limit V 25°C Unit BW Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response Res onse VIS = 0 dBm VIS centered between VCC and GND (Figures 6 and 14) 3.0 4.5 5.5 190 200 220 MHz VONL Maximum Feedthrough On Loss VIS = 0 dBm @ 10 kHz VIS centered between VCC and GND (Figure 6) 3.0 4.5 5.5 −2 −2 2 −2 dB VISO Off−Channel Isolation kHz; VIS = 1.0 V RMS f = 100 kHz VIS centered between VCC and GND (Figures 6 and 15) 3.0 4.5 5.5 −93 dB Q Charge Injection Enable In Input ut to Common I/O VIS = VCC to GND, FIS = 20 kHz tr = tf = 3.0 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figures 6 and 16) 3.0 5.5 1.5 3.0 pC C Total Harmonic Distortion THD + Noise FIS = 20 Hz to 1 MHz, RL = Rgen = 600 , CL = 50 pF F VIS = 3.0 VPP sine wave VIS = 5.0 VPP sine wave (Figure 17) (Fi 3.3 5.5 0.3 0.15 1.00E+05 1.00E+04 1.00E+03 1.00E+02 LEAKAGE (pA) THD 1.00E+01 1.00E+00 ICOM(ON) 1.00E−01 1.00E−02 1.00E−03 ICOM(OFF) 1.00E−04 1.00E−05 1.00E−06 INO(OFF) 1.00E−07 −55 −35 −15 5 25 45 65 85 105 125 145 TEMPERATURE (°C) Figure 3. Switch Leakage vs. Temperature http://onsemi.com 4 % NLAS323 VCC DUT VCC Input NO 50% 50% 0V COM VOUT 0.1 F 300 VOH 35 pF 90% 90% Output VOL Input tON tOFF Figure 4. tON/tOFF VCC VCC Input DUT 300 NO COM 50% 50% 0V VOUT VOH 35 pF Output 10% 10% VOL Input tOFF Figure 5. tON/tOFF http://onsemi.com 5 tON NLAS323 DUT Reference COM Transmitted NO 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3.0 dB below VONL Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT NO VCC VIN COM GND CL Output Off VIN Figure 7. Charge Injection: (Q) http://onsemi.com 6 On Off VOUT NLAS323 80 80 70 70 60 VCC = 2.0 50 50 RON () RON () 60 40 VCC = 2.5 30 −55°C 30 25°C VCC = 3.0 20 40 20 85°C VCC = 4.5 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 125°C 0 5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCOM (VOLTS) VIS (VOLTS) Figure 8. RON vs. VCOM and VCC (@25C) Figure 9. RON vs. VCOM and Temperature, VCC = 2.0 V 45 2 30 40 20 25 RON () RON () 30 −55°C 20 25°C 15 10 15 125°C 25°C 85°C 10 85°C 5 125°C 5 0 −55°C 25 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2.2 2.4 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCOM (VOLTS) VCOM (VOLTS) Figure 10. RON vs. VCOM and Temperature, VCC = 2.5 V Figure 11. RON vs. VCOM and Temperature, VCC = 3.0 V 3 35.0 18 30.0 16 −55°C 25°C 25.0 12 TIME (nS) RON () 14 85°C 10 8 15.0 4 5.0 2 0.0 2.0 0 tON 10.0 125°C 6 20.0 tOFF 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 3.0 4.5 5.0 5.5 VCC (V) VCOM (VOLTS) Figure 12. RON vs. VCOM and Temperature, VCC = 4.5 V Figure 13. Switching Time vs. Supply Voltage, T = 25C http://onsemi.com 7 NLAS323 0 0 0 BANDWIDTH (dB/Div) Phase (Degrees) 5 VCC = 5.0 V TA = 25°C 0.01 0.1 1 10 PHASE (Degrees) 10 OFF ISOLATION (dB/Div) Bandwidth (On − Loss) −50 VCC = 5.0 V TA = 25°C −100 100 300 0.01 0.1 FREQUENCY (MHz) 1 10 100 300 FREQUENCY (MHz) Figure 14. ON Channel Bandwidth and Phase Shift Over Frequency Figure 15. Off Channel Isolation 100 1.60 1.40 VCC = 5.0 V 1.20 10 0.80 THD (%) Q (pC) 1.00 VCC = 3.0 V 1 3.3 V 0.60 0.40 0.1 5.5 V 0.20 0.00 0.0 0.01 1.0 2.0 3.6 3.0 VCOM (V) 4.0 4.5 10 5.0 100 1000 10000 100000 1000000 FREQUENCY (Hz) Figure 16. Charge Injection vs. VCOM Figure 17. THD vs. Frequency DEVICE ORDERING INFORMATION Device Nomenclature Circuit Indicator Technology Device Function Package Suffix Package Shipping† NLAS323US NL AS 323 US US8 178 mm (7″) 3000 / Tape & Reel NLAS323USG NL AS 323 US US8 (Pb−Free) 178 mm (7″) 3000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 NLAS323 PACKAGE DIMENSIONS US8 US SUFFIX CASE 493−02 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION “A” DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055”) PER SIDE. 4. DIMENSION “B” DOES NOT INCLUDE INTER−LEAD FLASH OR PROTRUSION. INTER−LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055”) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076−0.0203 MM. (300−800 “). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002 “). −X− A 8 J −Y− 5 DETAIL E B L 1 4 R S G P U C −T− SEATING PLANE H 0.10 (0.004) T K D N 0.10 (0.004) M T X Y R 0.10 TYP V M F DETAIL E http://onsemi.com 9 DIM A B C D F G H J K L M N P R S U V MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0 6 5 10 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0 6 5 10 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC NLAS323 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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