Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers • Specified 20 Volt, 2.0 GHz Characteristics: Output Power — 0.5 Watt Power Gain — 10 to 11 dB 10 – 11 dB 1.0 – 4.0 GHz 0.5 WATT MICROWAVE LINEAR POWER TRANSISTORS • 100% Tested for Load Mismatch at All Phase Angles with ∞:1 VSWR • Gold Metallization for Improved Reliability • Diffused Ballast Resistors MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 22 Vdc Collector–Base Voltage VCES 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc TJ 200 °C Tstg – 65 to + 200 °C Operating Junction Temperature Storage Temperature Range CASE 400–01, STYLE 1 (TW200) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 40 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 22 — — Vdc Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V(BR)CES 50 — — Vdc Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0) V(BR)CBO 45 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 0.25 mAdc hFE 20 — 120 — Cob — — 3.5 pF OFF CHARACTERISTICS Collector Cutoff Current (VCB = 28 V, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) (continued) REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRW54001 2–1 ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCE = 20 V, Pout = 0.5 W, f = 2.0 GHz, IE = 120 mA) GPE 10 — — dB Load Mismatch (VCE = 20 V, IE = 120 mA, Pout = 0.5 W, f = 2.0 GHz, Load VSWR = ∞:1, All Phase Angles) ψ Cutoff Frequency (VCE = 20 V, IE = 120 mA) fτ 4.0 4.5 — GHz Gain Linearity (VCE = 20 V, IE = 120 mA, f = 2.0 GHz, Po1 = 0.5 W, Po2 = 0.5 mW) LG — — — — – 0.2 + 1.0 dB Intermodulation Distortion, 3rd Order (VCE = 20 V, IE = 120 mA, Po (PEP) = 0.5 W, Tones at 2.0 GHz and 2.005 GHz) IMD — – 30 — dB FUNCTIONAL TESTS No Degradation in Output Power TYPICAL CHARACTERISTICS 1.25 12 1 G PE , UNCOMPRESSED GAIN (dB) Pout, POWER OUTPUT (WATTS) VCE = 20 V 15 V 0.75 10 V 0.5 0.25 0 f = 2 GHz TFLANGE = 25°C 0 50 100 150 IE, EMITTER CURRENT (mA) 200 11 VCE = 20 V 11 10 15 V 10 9 10 V 9 8 8 7 f = 2 GHz TFLANGE = 25°C 0 250 0 Figure 1. 1.0 dB Compression Point versus Emitter Current 25 50 75 IE, EMITTER CURRENT (mA) 100 125 Figure 2. Gain versus Emitter Current 500 24 0.5 0.4 54001 18 12 0.3 0.2 Gp @ Po = 0.5 W 6 0.1 0 0.1 0.5 1 2 f, FREQUENCY (GHz) 3 4 5 Figure 3. Gain and 1.0 dB Compressed Power versus Frequency MRW54001 2–2 0 TFLANGE = 25°C IC, COLLECTOR CURRENT (mA) VCE = 20 V IE = 120 mA TFLANGE = 25°C 30 G PE , GAIN (dB) 0.6 Pout, POWER OUTPUT (WATTS) Po 400 300 200 100 0 ≈ BIAS FOR BEST GAIN 0 5 10 15 20 22 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 25 Figure 4. DC Safe Operating Area MOTOROLA RF DEVICE DATA S11 S21 S12 S22 VCE (Volts) IC (mA) f (GHz) Mag ∠φ Mag ∠φ Mag ∠φ Mag ∠φ 20 100 0.5 1.0 1.3 1.5 1.7 2.0 2.3 2.5 2.7 32 3.3 3.5 3.7 4.0 0.76 0.76 0.76 0.75 0.76 0.76 0.74 0.73 0.72 0.69 0.64 0.61 0.57 0.51 – 177 159 148 141 134 124 113 106 98 85 71 60 47 24 6.65 3.24 2.46 2.07 1.80 1.51 1.27 1.15 1.06 0.95 0.86 0.81 0.77 0.70 74 39 21 9.0 – 1.0 – 14 – 33 – 43 – 52 – 67 – 81 – 94 – 103 – 119 0.03 0.03 0.04 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.09 0.10 0.10 0.11 20 24 25 24 24 22 13 9.0 5.0 – 4.0 – 14 – 22 – 30 – 44 0.43 0.50 0.56 0.60 0.64 0.68 0.74 0.76 0.77 0.82 0.85 0.87 0.80 0.92 – 73 – 104 – 120 – 130 – 140 – 152 – 167 – 173 179 170 161 155 149 141 Table 1. MRW54001 Common Emitter S–Parameters The graph shown below displays MTTF in hours x ampere2 emitter current for each of the devices. Life tests at elevated temperatures have correlated to better than ±10% to the theoretical prediction for metal failure. Divide MTTF by IC2 for MTTF in a particular application. MTTF FACTOR (HRS x AMP2) 10,000,000 1,000,000 100,000 10,000 1,000 100 80 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) Figure 5. MTTF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA MRW54001 2–3 PACKAGE DIMENSIONS K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 1 4 2 DIM A C D F H J K N 3 D F STYLE 1: PIN 1. 2. 3. 4. C H J N INCHES MIN MAX 0.203 0.207 0.049 0.065 0.055 0.065 0.025 0.035 0.017 0.023 0.002 0.004 0.280 0.320 0.123 0.133 MILLIMETERS MIN MAX 5.16 5.25 1.25 1.65 1.40 1.65 0.64 0.88 0.44 0.58 0.06 0.10 7.12 8.12 3.13 3.37 COLLECTOR EMITTER BASE EMITTER A CASE 400–01 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. 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