Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 dB 80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 35 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 9.0 13.5 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 220 1.26 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.8 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 5.0 mAdc hFE 10 — 80 — Cob — 100 130 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF316 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) GPE 10 13 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) η 55 — — % Load Mismatch (VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) ψ NARROW BAND FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power R2 R3 RFC6 + 28 Vdc C13 RFC5 C12 L2 DUT C1 L1 RF INPUT C5 C2 C3 C4 RF OUTPUT RFC4 C6 C9 RFC1 C10 C11 C8 RFC2 C7 R1 RFC3 C1 — 22 pF 100 mil ATC C2, C3 — 24 pF 100 mil ATC C4, C11 — 0.8 – 20 pF JMC #5501 Johanson C5 — 200 pF 100 mil ATC C6 — 240 pF 100 mil ATC C7 — Dipped Mica 1000 pF C8 — 0.1 µF Erie Red Cap C9, C10, C12 — 30 pF 100 mil ATC C13 — 1.0 µF Tantalum L1 — 0.8″, #20 Wire L2 — 1.0″, #20 Wire RFC1, RFC4 — 0.15 µH Molded Coil RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B RFC5 — 2.5″, #20 Wire, 1.5 Turns RFC6 — Ferroxcube VK200–19/4B R1 — 10 Ω, 1/2 W R2, R3 — 10 Ω, 1.0 W Figure 1. 150 MHz Test Amplifier MRF316 2 MOTOROLA RF DEVICE DATA TYPICAL PERFORMANCE CURVES GPE, COMMON EMITTER POWER GAIN (dB) 140 Pout , OUTPUT POWER (WATTS) VCC = 28 V 120 f = 30 MHz 100 80 60 100 MHz 150 MHz 200 MHz 50 MHz 40 20 0 0.2 0.3 0.4 0.5 1 2 0.7 3 Pin, INPUT POWER (WATTS) 4 5 Pout = 80 W VCC = 28 V 22 18 14 10 6 20 10 7 26 Figure 2. Output Power versus Input Power 60 100 140 f, FREQUENCY (MHz) 120 Pin = 8 W 4W 90 2W 70 50 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 8 W 6W 6W 100 4W 80 2W 60 40 f = 150 MHz f = 100 MHz 30 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 Figure 4. Output Power versus Supply Voltage 220 Figure 3. Power Gain versus Frequency 130 110 180 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 Figure 5. Output Power versus Supply Voltage Pout , OUTPUT POWER (WATTS) 110 Pin = 8 W 90 6W 4W 70 2W 50 30 f = 200 MHz 10 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28 Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF316 3 0 1.0 Zin 2.0 3.0 1.0 200 100 2.0 125 3.0 1.0 150 50 4.0 175 f = 30 MHz 150 125 2.0 175 200 3.0 VCC = 28 V, Pout = 80 W 100 ZOL* 4.0 5.0 6.0 7.0 50 8.0 f = 30 MHz f MHz Zin OHMS ZOL* OHMS 30 50 100 125 150 175 200 1.2 – j2.4 1.1 – j2.2 0.3 + j0.7 0.6 + j1.2 0.9 + j1.6 2.2 + j0.3 0.3 + j0.8 5.5 – j6.8 4.5 – j6.0 2.7 – j3.5 2.3 – j2.6 2.0 – j1.7 1.9 – j1.3 2.0 – j0.9 9.0 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 7. Series Equivalent Input–Output Impedance MRF316 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H A U STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF316 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF316 6 ◊ *MRF316/D* MRF316/D MOTOROLA RF DEVICE DATA