Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) 5.0 W, 960 – 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • RF Performance Curves given for 28 Vdc and 36 Vdc Operation • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 336E–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous (1) IC 1.25 mAdc Total Device Dissipation @ TA = 25°C (1) Derate above 25°C PD 25 143 Watt mW/°C Storage Temperature Range Tstg – 65 to + 200 °C TJ 200 °C Symbol Max Unit RθJC 7.0 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF10005 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 1.0 mAdc hFE 20 — 100 — Cob — 7.0 10 pF Common–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) GPB 8.5 10.3 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) η 45 55 — % Load Mismatch (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz, VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 28 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power + 28 Vdc L1 Z10 C3 C4 + C5 – C2 Z9 D.U.T. RF INPUT Z2 Z4 Z1 Z5 Z6 C1, C2, C3 — 220 pF 100 mil Chip Capacitor C4 — 0.1 µF C5 — 47 µF/50 V Electrolytic L1 — 3 turn #18 AWG, 1/8″ ID, 0.18″ Long C1 Z8 Z7 Z3 RF OUTPUT Z1 – Z10 — Microstrip, see details below Board Material — 0.030″ Glass Teflon, 2.0 oz. Copper, εr = 2.55 0.20 0.050 0.25 0.57 0.70 0.40 0.13 0.050 0.37 0.08 0.375 0.25 0.25 0.40 1.45 0.70 0.20 0.30 0.40 0.00 0.000 0.650 1.125 0.30 0.275 0.080 1.385 2.365 0.16 0.660 1.91 1.96 0.20 0.50 2.365 0.90 Figure 1. Test Circuit MRF10005 2 MOTOROLA RF DEVICE DATA 9 8 8 Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) 9 f = 960 MHz 7 6 1215 MHz 5 4 3 VCC = 28 Vdc 2 7 1215 MHz 6 5 4 3 VCC = 36 Vdc 2 1 1 0 f = 960 MHz 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power Pout = 5 W, VCC = 28 V f = 960 MHz 1025 Zin 1090 Zo = 25 Ω f MHz Zin OHMS ZOL* OHMS 960 1025 1090 1150 1215 6.5 + j8.5 10.0 + j7.0 11.2 + j4.9 10.8 + j2.0 7.8 + j0.0 7.4 – j18.9 7.2 – j17.4 7.1 – j16.3 7.15 – j14.3 7.8 – j11.2 1150 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. 1215 1215 ZOL* 1150 1025 1090 f = 960 MHz Figure 4. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10005 3 PACKAGE DIMENSIONS –A– G H Q 1 2 PL 0.25 (0.010) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– 3 K 2 D F N STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE E C U DIM A B C D E F G H K N Q U INCHES MIN MAX 0.790 0.810 0.253 0.267 0.144 0.160 0.093 0.107 0.074 0.080 0.002 0.006 0.560 BSC 0.043 0.057 0.346 0.394 0.243 0.257 0.125 0.135 0.117 0.128 MILLIMETERS MIN MAX 20.07 20.57 6.43 6.78 3.66 4.06 2.37 2.71 1.88 2.03 0.06 0.15 14.22 BSC 1.10 1.44 8.79 10.10 6.18 6.52 3.18 3.42 2.98 3.25 –T– SEATING PLANE CASE 336E–02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF10005 4 ◊ *MRF10005/D* MRF10005/D MOTOROLA RF DEVICE DATA