Order this document by MMPQ2222/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 *Motorola Preferred Device 16 MAXIMUM RATINGS 1 Rating Symbol MMPQ2222 MMPQ2222A Unit VCEO 30 40 Vdc Collector – Base Voltage VCB 60 75 Vdc Emitter – Base Voltage VEB 5.0 Vdc IC 500 mAdc Collector – Emitter Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C PD Total Power Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range Each Transistor Four Transistors Equal Power 0.52 4.2 1.0 8.0 0.8 6.4 2.4 19.2 CASE 751B–05, STYLE 4 SO–16 Watts mW/°C Watts TJ, Tstg mW/°C °C –55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) MMPQ2222 MMPQ2222A V(BR)CEO 30 40 — — — — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMPQ2222 MMPQ2222A V(BR)CBO 60 75 — — — — Vdc V(BR)EBO 5.0 — — — — — Vdc — — — — 50 10 — — 100 Emitter – Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) ICBO MMPQ2222 MMPQ2222A Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width IEBO nAdc nAdc v 300 ms; Duty Cycle v 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 35 50 75 75 100 100 30 40 50 — — — — — — — — — — — — — — 300 — — — — — — — — — — — 0.4 0.3 1.6 1.0 — — — — — — — — 1.3 1.2 2.6 2.0 fT 200 350 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 4.5 — pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 17 — pF Turn–On Time (VCC = 30 Vdc, VBE(off) = –0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ton — 25 — ns Turn–Off Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) toff — 250 — ns ON CHARACTERISTICS DC Current Gain(1) (IC = 100 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 300 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMPQ2222A MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222A — VCE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A Vdc VBE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A Vdc DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product(1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width 2 v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data INFORMATION FOR USING THE SO–16 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm SO–16 SO–16 POWER DISSIPATION The power dissipation of the SO–16 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SO–16 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.0 watts. PD = 150°C – 25°C 125°C/W = 1.0 watts The 125°C/W for the SO–16 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.0 watts. There are other alternatives to achieving higher power dissipation from the SO–16 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 16 9 1 8 –B– P 8 PL 0.25 (0.010) M B S G K C –T– R F X 45 _ SEATING PLANE D 16 PL 0.25 (0.010) M T B S A J M S CASE 751B–05 SO–16 ISSUE J DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ *MMPQ2222/D* MMPQ2222/D Motorola Small–Signal Transistors, FETs and Diodes Device Data