VISHAY LL5711

LL5711 and LL6263
Schottky Diodes
Features
MiniMELF (SOD-80C)
Cathode Band
.063 (1.6)
Dia.
.051 (1.3)
.019 (0.48)
.011 (0.28)
.146 (3.7)
.130 (3.3)
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching
and low logic level applications.
• This diode is also available in the DO-35 case
with type designation 1N5711 and 1N6263.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
VRRM
70
60
V
Power Dissipation (Infinite Heatsink)
Ptot
400(1)
mW
Maximum Single Cycle Surge 10µs Square Wave
IFSM
2.0
A
Junction Temperature
Tj
125
°C
Storage Temperature Range
TS
–55 to +150
°C
LL5711
LL6263
Peak Inverse Voltage
Electrical Characteristics (T
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)R
IR = 10µA
70
60
—
—
—
—
V
Leakage Current
IR
VR = 50V
—
—
200
nA
Forward Voltage Drop
VF
IF = 1.0mA
IF = 15mA
—
—
—
—
0.41
1.0
V
Junction Capacitance
Ctot
VR = 0V, f = 1MHz
—
—
2.2
pF
trr
IF = IR = 5mA,
recover to 0.1IR
—
—
1
ns
J
Reverse Breakdown Voltage
Reverse Recovery Time
LL5711
LL6263
Note: (1) Valid provided that electrodes are kept at ambient temperature.
10/6/00
LL5711 and LL6263
Schottky Diodes
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)