SD103A thru SD103C Small-Signal Diode Schottky Diodes Features For general purpose applications The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. These diodes are also available in the MiniMELF case with type designations LL103A thru LL103C. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Peak inverse voltage Power dissipation (Infinite heatsink) S D 103A S D 103B S D 103C Symbol Value Unit VRRM 40 30 20 Volts Ptot Single cycle surge 60 Hz sine wave IFSM Thermal resistance junction to ambient air RθJA (1) 400 15 0.3 Amps (1) o (1) Junction temperature Tj 125 Storage temperature range TS -55 to +150 Notes: mW (1) C/mW o C o C 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 691 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit IR VR=30V VR=20V VR=10V - - 5 5 5 uA Forward voltage drop VF IF=20mA IF=200mA - - 0.37 0.6 Volt Junction capacitance Ctot VR=0V, f=1MHz - 50 - pF trr IF=IR=50mA to 200mA, recover to 0.1IR - 10 - ns Leakage current S D 103A S D 103B S D 103C Reverse recovery time RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 692 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 693