LL101A thru LL101C Small-Signal Diode Schottky Diodes Features For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the DO-35 case with type designations SD101A thru SD101C. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Peak inverse voltage LL101A LL101B LL101C Symbol Value Unit VRRM 60 50 40 Volts 400 (1) mW Power dissipation (Infinite heatsink) Ptot Maximum single cycle surge 10 us square wave IFSM 2.0 Tj 125 o C -55 to +150 o C Junction temperature Storage temperature range Notes: TS 1. Valid provided that electrodes are kept at ambient temperature. 707 Amps Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit Reverse breakdown voltage LL101A LL101B LL101C V(BR)R IR=10uA 60 50 40 - - Volts Leakage current LL101A LL101B LL101C IR VR=50V - - 200 200 200 nA IF=1mA - - 0.41 0.4 0.39 Volt IF=15mA - - 1.0 0.95 0.9 Volt Ctot VR=0V, f=1MHz - - 2.0 2.1 2.2 pF trr IF=IR=5mA, recover to 0.1IR - - 1 ns Forward voltage drop Junction capacitance Reverse recovery time LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C VF 708 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 709