bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs (bqSWITCHER™) The bqSWITCHER™ series are highly integrated Li-ion and Li-polymer switch-mode charge management devices targeted at a wide range of portable applications. The bqSWITCHER™ series offers integrated synchronous PWM controller and power FETs, high-accuracy current and voltage regulation, charge preconditioning, charge status, and charge termination, in a small, thermally enhanced QFN package. The system-controlled version provides additional inputs for full charge management under system control. The bqSWITCHER charges the battery in three phases: conditioning, constant current, and constant voltage. Charge is terminated based on userselectable minimum current level. A programmable charge timer provides a safety backup for charge termination. The bqSWITCHER automatically restarts the charge cycle if the battery voltage falls below an internal threshold. The bqSWITCHER automatically enters sleep mode when VCC supply is removed. 2 1 20 19 3 18 4 17 5 16 6 15 7 14 8 13 9 10 11 12 STAT2 or NC PGND PGND CE SNS BAT CELLS or FB or NC TS VTSB STAT1 IN IN PG VCC TTC or CMODE ISET1 ISET2 OUT RHL PACKAGE (TOP VIEW) (bq24100, 03, 03A, 04, 05, 08, 09, 13, 13A, 15) OUT • Ideal For Highly Efficient Charger Designs For Single-, Two- or Three-Cell Li-Ion and Li-Polymer Battery Packs • bq24105 Also for LiFePO4Battery (see Using bq24105 to Charge the LiFePO4 Battery) • Integrated Synchronous Fixed-Frequency PWM Controller Operating at 1.1 MHz With 0% to 100% Duty Cycle • Integrated Power FETs For Up To 2-A Charge Rate • High-Accuracy Voltage and Current Regulation • Available In Both Stand-Alone (Built-In Charge Management and Control) and System-Controlled (Under System Command) Versions • Status Outputs For LED or Host Processor Interface Indicates Charge-In-Progress, Charge Completion, Fault, and AC-Adapter Present Conditions • 20-V Maximum Voltage Rating on IN and OUT Pins • High-Side Battery Current Sensing • Battery Temperature Monitoring • Automatic Sleep Mode for Low Power Consumption • System-Controlled Version Can Be Used In NiMH and NiCd Applications • Reverse Leakage Protection Prevents Battery Drainage • Thermal Shutdown and Protection • Built-In Battery Detection • Available in 20-Pin, 3,5 mm × 4,5 mm QFN Package 23 DESCRIPTION VSS FEATURES 1 APPLICATIONS • • • • Handheld Products Portable Media Players Industrial and Medical Equipment Portable Equipment 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. bqSWITCHER, PowerPAD are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004–2008, Texas Instruments Incorporated bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) TJ CHARGE REGULATION VOLTAGE (V) INTENDED APPLICATION 4.2 V Stand-alone 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) –40°C to 125°C (1) (2) (3) Stand-alone 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) (Blinking status pins) Stand-alone Externally programmable (2.1 V to 15.5 V) Stand-alone 4.2 V (Blinking status pins) Stand-alone 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled 1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled Externally programmable (2.1 V to 15.5 V) System-controlled PART NUMBER (2) (3) MARKINGS bq24100RHLR CIA bq24100RHLT CIA bq24103RHLR CID bq24103RHLT CID bq24103ARHLR CKO bq24103ARHLT CKO bq24104RHLR NXW bq24104RHLT NXW bq24105RHLR CIF bq24105RHLT CIF bq24108RHLR CIU bq24109RHLR CDY bq24113RHLR CIJ bq24113RHLT CIJ bq24113ARHLR CKF bq24113ARHLT CKF bq24115RHLR CIL bq24115RHLT CIL For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. The RHL package is available in the following options: T – taped and reeled in quantities of 250 devices per reel R – taped and reeled in quantities of 3000 devices per reel This product is RoHS-compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for use in specified lead-free soldering processes. ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) UNIT Supply voltage range (with respect to VSS) Input voltage range (with respect to VSS and PGND) IN, VCC 20 V STAT1, STAT2, PG, CE, CELLS, SNS, BAT –0.3 V to 20 V OUT –0.7 V to 20 V CMODE, TS, TTC 7V VTSB 3.6 V ISET1, ISET2 3.3 V Voltage difference between SNS and BAT inputs (VSNS – VBAT) ±1 V Output sink STAT1, STAT2, PG 10 mA Output current (average) OUT 2.2 A TA Operating free-air temperature range –40°C to 85°C TJ Junction temperature range –40°C to 125°C Tstg Storage temperature –65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) 2 300°C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 PACKAGE DISSIPATION RATINGS (1) PACKAGE θJA θJC TA < 40°C POWER RATING DERATING FACTOR ABOVE TA = 40°C RHL (1) 46.87°C/W 2.5°C/W 1.81 W 0.021 W/°C This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This is connected to the ground plane by a 2x3 via matrix. RECOMMENDED OPERATING CONDITIONS MAX UNIT Supply voltage, VCC and IN (Tie together) 4.35 (1) MIN 16 (2) V Operating junction temperature range, TJ –40 125 °C (1) (2) NOM The IC continues to operate below Vmin, to 3.5 V, but the specifications are not tested and not specified. The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the IN or OUT pins. A tight layout minimizes switching noise. ELECTRICAL CHARACTERISTICS TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CURRENTS VCC > VCC(min), PWM switching I(VCC) I(SLP) VCC supply current Battery discharge sleep current, (SNS, BAT, OUT, FB pins) 10 VCC > VCC(min), PWM NOT switching mA 5 VCC > VCC(min), CE = HIGH 315 0°C ≤ TJ ≤ 65°C, VI(BAT) = 4.2 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 3.5 0°C ≤ TJ ≤ 65°C, VI(BAT) = 8.4 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 5.5 0°C ≤ TJ ≤ 65°C, VI(BAT) = 12.6 V, VCC < V(SLP) or VCC > V(SLP) but not in charge 7.7 µA µA VOLTAGE REGULATION VOREG VIBAT CELLS = Low, in voltage regulation 4.2 CELLS = High, in voltage regulation 8.4 Output voltage, bq24100/08/09 Operating in voltage regulation 4.2 Feedback regulation REF for bq24105/15 only (W/FB) IIBAT = 25 nA typical into pin 2.1 Output voltage, bq24103/03A/04/13/13A Voltage regulation accuracy TA = 25°C V V –0.5% 0.5% –1% 1% 150 2000 –10% 10% CURRENT REGULATION - FAST CHARGE IOCHARGE Output current range of converter VLOWV ≤ VI(BAT) < VOREG, V(VCC) - VI(BAT) > V(DO-MAX) mA 100 mV ≤ VIREG≤ 200 mV, V IREG + 1V RSET1 1000, VIREG Voltage regulated across R(SNS) Accuracy V(ISET1) Output current set voltage V(LOWV) ≤ VI(BAT) ≤ VO(REG), V(VCC) ≤ VI(BAT) × V(DO-MAX) 1 K(ISET1) Output current set factor VLOWV ≤ VI(BAT) < VO(REG) , V(VCC) ≤ VI(BAT) + V(DO-MAX) 1000 Programmed Where 5 kΩ ≤ RSET1 ≤ 10 kΩ, Select RSET1 to program VIREG, VIREG(measured) = IOCHARGE + RSNS (–10% to 10% excludes errors due to RSET1 and R(SNS) tolerances) V V/A PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION VLOWV Precharge to fast-charge transition voltage threshold, BAT, bq24100/03/03A/04/05/08/09 ICs only Copyright © 2004–2008, Texas Instruments Incorporated 68 71.4 75 %VO(REG) Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 3 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com ELECTRICAL CHARACTERISTICS (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) MIN TYP MAX t Deglitch time for precharge to fast charge transition, PARAMETER Rising voltage; tRISE, tFALL = 100 ns, 2-mV overdrive TEST CONDITIONS UNIT 20 30 40 ms IOPRECHG Precharge range VI(BAT) < VLOWV, t < tPRECHG 15 200 mA V(ISET2) Precharge set voltage, ISET2 VI(BAT) < VLOWV, t < tPRECHG K(ISET2) Precharge current set factor 100 mV 1000 V/A 100 mV ≤ VIREG-PRE ≤ 100 mV, V VIREG-PRE Voltage regulated across RSNS-Accuracy IREG*PRE + 0.1V RSET2 1000, (PGM) Where 1.2 kΩ ≤ RSET2 ≤ 10 kΩ, Select RSET1 to program VIREG-PRE, VIREG-PRE (Measured) = IOPRE-CHG × RSNS (–20% to 20% excludes errors due to RSET1 and RSNS tolerances) –20% 20% 15 200 CHARGE TERMINATION (CURRENT TAPER) DETECTION ITERM Charge current termination detection range VI(BAT) > VRCH VTERM Charge termination detection set voltage, ISET2 VI(BAT) > VRCH K(ISET2) Termination current set factor tdg-TERM 100 mV 1000 Charger termination accuracy VI(BAT) > VRCH Deglitch time for charge termination Both rising and falling, 2-mV overdrive tRISE, tFALL = 100 ns –20% mA V/A 20% 20 30 40 ms TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR %LTF Cold temperature threshold, TS, % of bias VLTF = VO(VTSB) × % LTF/100 72.8% 73.5% 74.2% %HTF Hot temperature threshold, TS, % of bias VHTF = VO(VTSB) × % HTF/100 33.7% 34.4% 35.1% %TCO Cutoff temperature threshold, TS, % of bias VTCO = VO(VTSB) × % TCO/100 28.7% 29.3% 29.9% 0.5% 1% 1.5% 20 30 40 LTF hysteresis Deglitch time for temperature fault, TS Both rising and falling, 2-mV overdrive tRISE, tFALL = 100 ns tdg-TS Deglitch time for temperature fault, TS, bq24109, bq24104 VO(VTSB) TS bias output voltage VCC > VIN(min), I(VTSB) = 10 mA 0.1 µF ≤ CO(VTSB) ≤ 1 µF VO(VTSB) TS bias voltage regulation accuracy VCC > IN(min), I(VTSB) = 10 mA 0.1 µF ≤ CO(VTSB) ≤ 1 µF ms 500 3.15 –10% V 10% BATTERY RECHARGE THRESHOLD VRCH tdg-RCH Recharge threshold voltage Below VOREG 75 100 125 mV/cell Deglitch time VI(BAT) < decreasing below threshold, tFALL = 100 ns 10-mV overdrive 20 30 40 ms STAT1, STAT2, AND PG OUTPUTS VOL(STATx) Low-level output saturation voltage, STATx IO = 5 mA 0.5 VOL(PG) Low-level output saturation voltage, PG IO = 10 mA 0.1 V CE CMODE, CELLS INPUTS VIL Low-level input voltage IIL = 5 µA VIH High-level input voltage IIH = 20 µA 0 0.4 1.3 VCC V TTC INPUT tPRECHG Precharge timer tCHARGE Programmable charge timer range t(CHG) = C(TTC) × K(TTC) Charge timer accuracy 0.01 µF ≤ C(TTC) ≤ 0.18 µF KTTC Timer multiplier CTTC Charge time capacitor range VTTC_EN TTC enable threshold voltage 4 Submit Documentation Feedback 1440 1800 25 -10% 2160 s 572 minutes 10% 2.6 0.01 V(TTC) rising min/nF 0.22 200 µF mV Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ELECTRICAL CHARACTERISTICS (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SLEEP COMPARATOR VSLP-ENT Sleep-mode entry threshold VSLP-EXIT Sleep-mode exit hysteresis, tdg-SLP Deglitch time for sleep mode 2.3 V ≤ VI(OUT) ≤ VOREG, for 1 or 2 cells VCC ≤ VIBAT +5 mV VCC ≤ VIBAT +75 mV VI(OUT) = 12.6 V, RIN = 1 kΩ bq24105/15 (1) VCC ≤ VIBAT -4 mV VCC ≤ VIBAT +73 mV 40 160 2.3 V ≤ VI(OUT)≤ VOREG VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, PMOS turns off VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, STATx pins turn off V mV µs 5 20 30 40 3.50 ms UVLO VUVLO-ON IC active threshold voltage VCC rising 3.15 3.30 IC active hysteresis VCC falling 120 150 V mV PWM Internal P-channel MOSFET on-resistance Internal N-channel MOSFET on-resistance fOSC 7 V ≤ VCC ≤ VCC(max) 400 4.5 V ≤ VCC ≤ 7 V 500 7 V ≤ VCC ≤ VCC(max) 130 4.5 V ≤ VCC ≤ 7 V mΩ 150 Oscillator frequency 1.1 Frequency accuracy –9% MHz 9% DMAX Maximum duty cycle DMIN Minimum duty cycle 100% tTOD Switching delay time (turn on) 20 ns tsyncmin Minimum synchronous FET on time 60 ns 0% Synchronous FET minimum current-off threshold (2) 50 400 mA BATTERY DETECTION IDETECT Battery detection current during time-out fault VI(BAT) < VOREG – VRCH IDISCHRG1 Discharge current tDISCHRG1 Discharge time IWAKE tWAKE 2 mA VSHORT < VI(BAT) < VOREG – VRCH 400 µA VSHORT < VI(BAT) < VOREG – VRCH 1 s Wake current VSHORT < VI(BAT) < VOREG – VRCH 2 mA Wake time VSHORT < VI(BAT) < VOREG – VRCH 0.5 s IDISCHRG2 Termination discharge current Begins after termination detected, VI(BAT) ≤ VOREG 400 µA tDISCHRG2 Termination time 262 ms OUTPUT CAPACITOR COUT Required output ceramic capacitor range from SNS to PGND, between inductor and RSNS CSNS Required SNS capacitor (ceramic) at SNS pin 4.7 10 µF 47 µF 0.1 PROTECTION Threshold over VOREG to turn off P-channel MOSFET, STAT1, and STAT2 during charge or termination states 110 117 2.6 3.6 4.5 A Short-circuit voltage threshold, BAT VI(BAT) falling 1.95 2 2.05 V/cell ISHORT Short-circuit current VI(BAT) ≤ VSHORT TSHTDWN Thermal trip VOVP OVP threshold voltage ILIMIT Cycle-by-cycle current limit VSHORT Thermal hysteresis (1) (2) 35 121 %VO(REG) 65 mA 165 °C 10 °C For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry. N-channel always turns on for ~60 ns and then turns off if current is too low. Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 5 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com TERMINAL FUNCTIONS TERMINAL bq24100, bq24108, bq24109 bq24103, bq24103A bq24104 bq24105 bq24113, bq24113A bq24115 BAT 14 14 14 14 14 I Battery voltage sense input. Bypass it with a 0.1 µF capacitor to PGND if there are long inductive leads to battery. CE 16 16 16 16 16 I Charger enable input. This active low input, if set high, suspends charge and places the device in the low-power sleep mode. Do not pull up this input to VTSB. I Available on parts with fixed output voltage. Ground or float for single-cell operation (4.2 V). For two-cell operation (8.4 V) pull up this pin with a resistor to VCC. 7 I Charge mode selection: low for precharge as set by ISET2 pin and high (pull up to VTSB or <7 V) for fast charge as set by ISET1. 13 I Output voltage analog feedback adjustment. Connect the output of a resistive voltage divider powered from the battery terminals to this node to adjust the output battery voltage regulation. Charger input voltage. NAME CELLS 13 13 CMODE 7 FB IN 13 I/O DESCRIPTION 3, 4 3, 4 3, 4 3, 4 3, 4 I ISET1 8 8 8 8 8 I/O Charger current set point 1 (fast charge). Use a resistor to ground to set this value. ISET2 9 9 9 9 9 I/O Charge current set point 2 (precharge and termination), set by a resistor connected to ground. A low-level CMODE signal selects the ISET2 charge rate, but if the battery voltage reaches the regulation set point, bqSWITCHER changes to voltage regulation regardless of CMODE input. N/C 13 19 19 - No connection. This pin must be left floating in the application. Charge current output inductor connection. Connect a zener TVS diode between OUT pin and PGND pin to clamp the voltage spike to protect the power MOSFETs during abnormal conditions. 1 1 1 1 1 O 20 20 20 20 20 O 5 5 5 5 5 O 17,18 17,18 17,18 17,18 17, 18 SNS 15 15 15 15 15 I Charge current-sense input. Battery current is sensed via the voltage drop developed on this pin by an external sense resistor in series with the battery pack. A 0.1-µF capacitor to PGND is required. STAT1 2 2 2 2 2 O Charge status 1 (open-drain output). When the transistor turns on indicates charge in process. When it is off and with the condition of STAT2 indicates various charger conditions (See Table 1) STAT2 19 19 19 O Charge status 2 (open-drain output). When the transistor turns on indicates charge is done. When it is off and with the condition of STAT1 indicates various charger conditions (See Table 1) TS 12 12 12 I Temperature sense input. This input monitors its voltage against an internal threshold to determine if charging is allowed. Use an NTC thermistor and a voltage divider powered from VTSB to develop this voltage. (See Figure 10) TTC 7 7 7 I Timer and termination control. Connect a capacitor from this node to GND to set the bqSWITCHER timer. When this input is low, the timer and termination detection are disabled. I Analog device input. A 0.1 µF capacitor to VSS is required. OUT PG PGND 12 12 VCC 6 6 6 6 6 VSS 10 10 10 10 10 VTSB 11 11 11 11 11 Exposed Thermal Pad 6 Pad Pad Pad Submit Documentation Feedback Pad Pad Power-good status output (open drain). The transistor turns on when a valid VCC is detected. It is turned off in the sleep mode. PG can be used to drive a LED or communicate with a host processor. Power ground input Analog ground input O TS internal bias regulator voltage. Connect capacitor (with a value between a 0.1-µF and 1-µF) between this output and VSS. There is an internal electrical connection between the exposed thermal pad and VSS. The exposed thermal pad must be connected to the same potential as the VSS pin on the printed circuit board. The power pad can be used as a star ground connection between VSS and PGND. A common ground plane may be used. VSS pin must be connected to ground at all times. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 TYPICAL APPLICATION CIRCUITS LOUT BQ24100 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done 3 Charge IN OUT 1 4 IN 6 VCC 2 STAT1 PGND 18 RSNS 10 mH OUT 20 COUT D1 PGND 17 Battery Pack Pack+ 0.1W 10 mF Pack- MMBZ18VALT1 103AT 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 7.5 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 9.31 KW RT1 442 KW RT2 RISET2 TS 12 13 NC VTSB 11 0.1 mF 0.1 mF 0.1 mF Figure 1. Stand-Alone 1-Cell Application BQ24103 BQ24104 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge LOUT 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH COUT D1 Pack+ 0.1W 10 mF Pack- MMBZ18VALT1 PGND 17 (see Note A) 2 Battery Pack 103AT STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 7.5 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 0.1 mF 9.31 KW RT1 442 KW RT2 RISET2 TS 12 13 CELLS VTSB 11 0.1 mF 0.1 mF VIN 10 kW A. Zener diode not needed for bq24103A and bq24104. Figure 2. Stand-Alone 2-Cell Application Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 7 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com TYPICAL APPLICATION CIRCUITS (continued) LOUT BQ24105 VIN 1.5 KW 10 mF CIN 1.5 KW Adapter Present 1.5 KW Done 3 Charge IN OUT 1 4 IN 6 VCC 2 STAT1 PGND 18 RSNS 10 mH OUT 20 COUT D1 Battery Pack Pack+ 0.1W 10 mF Pack- MMBZ18VALT1 PGND 17 103AT 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 7.5 KW RISET1 ISET1 8 VTSB 7.5 KW CTTC 16 CE ISET2 9 10 VSS 0.1 mF 9.31 KW RT1 442 KW RT2 RISET2 0.1 mF TS 12 13 FB VTSB 11 0.1 mF 301 KW 0.1 mF 100 KW Figure 3. Stand-Alone 2-Cell Application BQ24113, BQ24113A VIN 3 IN OUT 1 4 IN OUT 20 6 VCC 2 STAT1 PGND 18 LOUT 10 mH 0.1 mF CIN 10 mF RSNS COUT D1 0.1W 10 mF Pack+ Pack- MMBZ18VALT1 PGND 17 (see Note A) 19 NC Battery Pack 103AT SNS 15 5 PG BAT 14 7 CMODE ISET1 8 7.5 KW RISET1 VTSB 7.5 KW 16 CE 10 VSS 13 CELLS ISET2 9 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF TO HOST CONTROLLER A. Zener diode not needed for bq24113A. Figure 4. System-Controlled Application 8 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 TYPICAL OPERATING PERFORMANCE EFFICIENCY vs CHARGE CURRENT EFFICIENCY vs CHARGE CURRENT 100 100 VI = 9 V 90 90 VI = 5 V Efficiency - % Efficiency - % VI = 16 V 80 VI = 16 V 70 V(BAT) = 4.2 V 1-Cell 60 80 70 V(BAT) = 8.4 V 2-Cell 60 50 50 0 0.5 1 1.5 I(BAT) - Charge Current - A Figure 5. Copyright © 2004–2008, Texas Instruments Incorporated 2 0 0.5 1 1.5 2 I(BAT) - Charge Current - A Figure 6. Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 9 10 Submit Documentation Feedback VCC Term & Timer Disable VCC VTSB VCC VSS TTC STAT2 STAT1 CE PG VTSB VCC IN IN 0.5V 1V Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 CE CHARGE 50 mV BAT TERM OVP Charge (STATE MACHINE) TIMER FF CHAIN PRE-CHG TIMEOUT TIMER CLK *Patent Pending #36889 TG CONTROL LOGIC DSABL_TERM PRE-CHARGE WAKE DISCHARGE 0.75V bq2410x VCC V(3.6A) Icntrl Sense FET VCC-6V Poff VCC PG 2.1V 0.25V SLEEP VCC-6V bqSWITCHER VCC VTSB Voltage Reference Vuvlo UVLO/POR POR CHARGE SLEEP + - VIN Protection PMOS FET is OFF when not charging or in SLEEP to prevent discharge of battery when IN < BAT OVP MOD FAST CHG TIMEOUT RESET SLEEP SYNCH PkILim VSHORT BAT_PRS_ disch LowV Term_Det Vrch UVLO/ POR SUSPEND 6V VCC-6V VCC BG VSHORT LowV 30ms Dgltch BAT_PRS_dischg Vovp Q R Q S I 2.1V BAT VCC + - SNS+ 1V TS SPIN SUSPEND FASTCHG Disable BAT 20uA VCC Ibat Reg + - + - + - TCO HTF LTF 30ms dgltch PRE-CHG Disable 0.1V FASTCHG Disable TEMP SUSPEND 0.1V SNS + 1k - TERM SLEEP SUSPEND 1V Vbat Reg + 2.1V 20uA VCC VCC RAMP (Vpp=VCC/10) VCC RAMP OSC VCC/10 * COMPENSATION Discharge Charge Wake Vrch 30ms Dgltch Vreg BAT CLAMP Synch Gate Drive TG + V(150 mA) Isynch PkILim or OVP TIMEOUT FAULT SUSPEND TERM UVLO/POR MOD OVP SYNCH TIMEOUT PkILim BG Sense FET 1C 2C FB SPIN BAT 1k Term_Det VTSB + - 10 Co 10 F H Lo Rsns TS ISET2 ISET1 VTSB RSET2 RSET1 FB CELLS (bq24103/04/13) FB (bq24105/15) N/C (bq24100) VTSB BAT SNS PGND PGND OUT OUT to FB FB SPIN ONLY + Pack+ Temp Pack- bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com FUNCTIONAL BLOCK DIAGRAM Copyright © 2004–2008, Texas Instruments Incorporated bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 OPERATIONAL FLOW CHART POR Check for Battery Presence Battery Detect? No Indicate BATTERY ABSENT Yes Suspend Charge TS Pin in LTF to HTF Range? No Indicate CHARGE SUSPEND Yes VBAT <VLOWV Yes Regulate IPRECHG Reset and Start T30min timer Indicate ChargeIn-Progress No Suspend Charge Reset and Start FSTCHG timer TS pin in LTF to TCO range? Regulate Current or Voltage Yes No Indicate CHARGE SUSPEND No TS pin in LTF to HTF range? Indicate ChargeIn-Progress No VBAT <VLOWV Suspend Charge TS Pin in LTF to TCO Range? Yes Yes No Indicate CHARGE SUSPEND Yes No T30min Expired? No TS pin in LTF to HTF range? FSTCHG Timer Expired? No Yes Yes Yes VBAT <VLOWV Yes No - Fault Condition - Enable I DETECT No ITERM detection? Indicate Fault No Yes Battery Replaced? (Vbat < Vrch?) - Turn Off Charge - Enable I DISCHG for tDISCHG2 Indicate ChargeIn-Progress *NOTE: If the TTC pin is pulled low, the safety timer and termination are disabled; the charger continues to regulate, and the STAT pins indicate charge in progress. Yes Charge Complete VBAT < VRCH ? If the TTC pin is pulled high (VTSB), only the safety timer is disabled (termination is normal). No Indicate DONE * Battery Removed Yes Indicate BATTERY ABSENT Figure 7. Stand-Alone Version Operational Flow Chart Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 11 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com POR SLEEP MODE Vcc > VI(BAT) Checked at All Times No No Indicate SLEEP MODE Yes /CE=Low Yes Regulate IO(PRECHG) CMODE=Low Yes Indicate ChargeIn-Progress No Yes /CE=High No Regulate Current or Voltage Indicate ChargeIn-Progress Yes Yes CMODE=High or VIBAT in VREG Yes No CMODE=Low No No /CE=High Yes Turn Off Charge Indicate DONE Yes No /CE=Low Yes Figure 8. System-Controlled Operational Flow Chart 12 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 DETAILED DESCRIPTION The bqSWITCHER™ supports a precision Li-ion or Li-polymer charging system for one-, two-, or three-cell applications. See Figure 7 and Figure 8 for a typical charge profile. Precharge Phase Voltage Regulation and Charge Termination Phase Current Regulation Phase Regulation Voltage Regulation Current Charge Voltage VLOW VSHORT Charge Current Precharge and Termination ISHORT Programmable Safety Timer Precharge Timer UDG-04037 Figure 9. Typical Charging Profile PWM Controller The bq241xx provides an integrated fixed 1MHz frequency voltage-mode controller with Feed-Forward function to regulate charge current or voltage. This type of controller is used to help improve line transient response, thereby simplifying the compensation network used for both continuous and discontinuous current conduction operation. The voltage and current loops are internally compensated using a Type-III compensation scheme that provides enough phase boost for stable operation, allowing the use of small ceramic capacitors with very low ESR. There is a 0.5V offset on the bottom of the PWM ramp to allow the device to operate between 0% to 100% duty cycle. The internal PWM gate drive can directly control the internal PMOS and NMOS power MOSFETs. The high-side gate voltage swings from VCC (when off), to VCC-6 (when on and VCC is greater than 6V) to help reduce the conduction losses of the converter by enhancing the gate an extra volt beyond the standard 5V. The low-side gate voltage swings from 6V, to turn on the NMOS, down to PGND to turn it off. The bq241xx has two back to back common-drain P-MOSFETs on the high side. An input P-MOSFET prevents battery discharge when IN is lower than BAT. The second P-MOSFET behaves as the switching control FET, eliminating the need of a bootstrap capacitor. Cycle-by-cycle current limit is sensed through the internal high-side sense FET. The threshold is set to a nominal 3.6A peak current. The low-side FET also has a current limit that decides if the PWM Controller will operate in synchronous or non-synchronous mode. This threshold is set to 100mA and it turns off the low-side NMOS before the current reverses, preventing the battery from discharging. Synchronous operation is used when the current of the low-side FET is greater than 100mA to minimize power losses. Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 13 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com Temperature Qualification The bqSWITCHER continuously monitors battery temperature by measuring the voltage between the TS pin and VSS pin. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop this voltage. The bqSWITCHER compares this voltage against its internal thresholds to determine if charging is allowed. To initiate a charge cycle, the battery temperature must be within the V(LTF)-to-V(HTF) thresholds. If battery temperature is outside of this range, the bqSWITCHER suspends charge and waits until the battery temperature is within the V(LTF)-to-V(HTF) range. During the charge cycle (both precharge and fast charge), the battery temperature must be within the V(LTF)-to-V(TCO) thresholds. If battery temperature is outside of this range, the bqSWITCHER suspends charge and waits until the battery temperature is within the V(LTF)-to-V(HTF) range. The bqSWITCHER suspends charge by turning off the PWM and holding the timer value (i.e., timers are not reset during a suspend condition). Note that the bias for the external resistor divider is provided from the VTSB output. Applying a constant voltage between the V(LTF)-to-V(HTF) thresholds to the TS pin disables the temperature-sensing feature. VO(VTSB) ´ RTHCOLD ´ RTHHOT ´ 1 - 1 VLTF VHTF RT2 = RTHHOT ´ ( VO(VTSB) -1 VHTF VO(VTSB) -1 VLTF ) - RTHCOLD ´ ( VO(VTSB) -1 VLTF ) Where: VLTF = VO(VTSB) ´ % LTF¸100 / 100 VHTF = VO(VTSB) ´ % HTF¸100 / 100 RT1 = 1 + 1 RT2 RTHCOLD (1) VCC Charge Suspend Charge Suspend V(LTF) Temperature Range to Initiate Charge V(HTF) V(TCO) Charge Suspend Temperature Range During Charge Cycle Charge Suspend VSS Figure 10. TS Pin Thresholds Battery Preconditioning (Precharge) On power up, if the battery voltage is below the VLOWV threshold, the bqSWITCHER applies a precharge current, IPRECHG, to the battery. This feature revives deeply discharged cells. The bqSWITCHER activates a safety timer, tPRECHG, during the conditioning phase. If the VLOWV threshold is not reached within the timer period, the bqSWITCHER turns off the charger and enunciates FAULT on the STATx pins. In the case of a FAULT condition, the bqSWITCHER reduces the current to IDETECT. IDETECT is used to detect a battery replacement condition. Fault condition is cleared by POR or battery replacement. 14 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 The magnitude of the precharge current, IO(PRECHG), is determined by the value of programming resistor, R(ISET2), connected to the ISET2 pin. K (ISET2) V (ISET2) I O(PRECHG) + ǒR(ISET2) R(SNS)Ǔ (2) where RSNS is the external current-sense resistor V(ISET2) is the output voltage of the ISET2 pin K(ISET2) is the V/A gain factor V(ISET2) and K(ISET2) are specified in the Electrical Characteristics table. Battery Charge Current The battery charge current, IO(CHARGE), is established by setting the external sense resistor, R(SNS), and the resistor, R(ISET1), connected to the ISET1 pin. In order to set the current, first choose R(SNS) based on the regulation threshold VIREG across this resistor. The best accuracy is achieved when the VIREG is between 100mV and 200mV. V IREG R (SNS) + I OCHARGE (3) If the results is not a standard sense resistor value, choose the next larger value. Using the selected standard value, solve for VIREG. Once the sense resistor is selected, the ISET1 resistor can be calculated using the following equation: K V ISET1 R ISET1 + ISET1 RSNS I CHARGE (4) Battery Voltage Regulation The voltage regulation feedback occurs through the BAT pin. This input is tied directly to the positive side of the battery pack. The bqSWITCHER monitors the battery-pack voltage between the BAT and VSS pins. The bqSWITCHER is offered in a fixed single-cell voltage version (4.2 V) and as a one-cell or two-cell version selected by the CELLS input. A low or floating input on the CELLS selects single-cell mode (4.2 V) while a high-input through a resistor selects two-cell mode (8.4 V). For the bq24105 and bq24115, the output regulation voltage is specified as: (R1 + R2) VOREG = R2 x VIBAT (5) where R1 and R2 are resistor divider from BAT to FB and FB to VSS, respectively. The bq24105 and bq24115 recharge threshold voltage is specified as: (R1 + R2) VRCH = R2 x 50 mV Copyright © 2004–2008, Texas Instruments Incorporated (6) Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 15 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com Charge Termination and Recharge The bqSWITCHER monitors the charging current during the voltage regulation phase. Once the termination threshold, ITERM, is detected, the bqSWITCHER terminates charge. The termination current level is selected by the value of programming resistor, R(ISET2), connected to the ISET2 pin. K (ISET2) V TERM I TERM + ǒR(ISET2) R(SNS)Ǔ (7) where R(SNS) is the external current-sense resistor VTERM is the output of the ISET2 pin K(ISET2) is the A/V gain factor VTERM and K(ISET2) are specified in the Electrical Characteristics table As a safety backup, the bqSWITCHER also provides a programmable charge timer. The charge time is programmed by the value of a capacitor connected between the TTC pin and GND by the following formula: t CHARGE + C(TTC) K(TTC) (8) where C(TTC) is the capacitor connected to the TTC pin K(TTC) is the multiplier A • • • • new charge cycle is initiated when one of the following conditions is detected: The battery voltage falls below the VRCH threshold. Power-on reset (POR), if battery voltage is below the VRCH threshold CE toggle TTC pin, described as follows. In order to disable the charge termination and safety timer, the user can pull the TTC input below the VTTC_EN threshold. Going above this threshold enables the termination and safety timer features and also resets the timer. Tying TTC high disables the safety timer only. 16 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 Sleep Mode The bqSWITCHER enters the low-power sleep mode if the VCC pin is removed from the circuit. This feature prevents draining the battery during the absence of VCC. Charge Status Outputs The open-drain STAT1 and STAT2 outputs indicate various charger operations as shown in Table 1. These status pins can be used to drive LEDs or communicate to the host processor. Note that OFF indicates that the open-drain transistor is turned off. Table 1. Status Pins Summary STAT1 STAT2 Charge-in-progress Charge State ON OFF Charge complete OFF ON Charge suspend, timer fault, overvoltage, sleep mode, battery absent OFF OFF Table 2. Status Pins Summary (bq24104, bq24108 and bq24109 only) Charge State STAT1 STAT2 OFF OFF Charge-in-progress ON OFF Charge complete OFF ON Battery over discharge, VI(BAT) < V(SC) ON/OFF (0.5 Hz) OFF Charge suspend (due to TS pin and internal thermal protection) ON/OFF (0.5 Hz) OFF Precharge timer fault ON/OFF (0.5 Hz) OFF Fast charge timer fault ON/OFF (0.5 Hz) OFF OFF OFF Battery absent Sleep mode PG Output The open-drain PG (power good) indicates when the AC-to-DC adapter (i.e., VCC) is present. The output turns on when sleep-mode exit threshold, VSLP-EXIT, is detected. This output is turned off in the sleep mode. The PG pin can be used to drive an LED or communicate to the host processor. CE Input (Charge Enable) The CE digital input is used to disable or enable the charge process. A low-level signal on this pin enables the charge and a high-level VCC signal disables the charge. A high-to-low transition on this pin also resets all timers and fault conditions. Note that the CE pin cannot be pulled up to VTSB voltage. This may create power-up issues. Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 17 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com Timer Fault Recovery As shown in FIGURE 10, bqSWITCHER provides a recovery method to deal with timer fault conditions. The following summarizes this method. Condition 1 VI(BAT) above recharge threshold (VOREG - VRCH) and timeout fault occurs. Recovery method: bqSWITCHER waits for the battery voltage to fall below the recharge threshold. This could happen as a result of a load on the battery, self-discharge or battery removal. Once the battery falls below the recharge threshold, the bqSWITCHER clears the fault and enters the battery absent detection routine. A POR or CE toggle also clears the fault. Condition 2 Charge voltage below recharge threshold (VOREG – VRCH) and timeout fault occurs Recovery method: Under this scenario, the bqSWITCHER applies the IDETECT current. This small current is used to detect a battery removal condition and remains on as long as the battery voltage stays below the recharge threshold. If the battery voltage goes above the recharge threshold, then the bqSWITCHER disables the IDETECT current and executes the recovery method described in Condition 1. Once the battery falls below the recharge threshold, the bqSWITCHER clears the fault and enters the battery absent detection routine. A POR or CE toggle also clears the fault. Output Overvoltage Protection (Applies To All Versions) The bqSWITCHER provides a built-in overvoltage protection to protect the device and other components against damages if the battery voltage gets too high, as when the battery is suddenly removed. When an overvoltage condition is detected, this feature turns off the PWM and STATx pins. The fault is cleared once VIBAT drops to the recharge threshold (VOREG – VRCH). Functional Description for System-Controlled Version (bq2411x) For applications requiring charge management under the host system control, the bqSWITCHER (bq2411x) offers a number of control functions. The following section describes these functions. Precharge And Fast-Charge Control A low-level signal on the CMODE pin forces the bqSWITCHER to charge at the precharge rate set on the ISET2 pin. A high-level signal forces charge at fast-charge rate as set by the ISET1 pin. If the battery reaches the voltage regulation level, VOREG, the bqSWITCHER transitions to voltage regulation phase regardless of the status of the CMODE input. Charge Termination And Safety Timers The charge timers and termination are disabled in the system-controlled versions of the bqSWITCHER. The host system can use the CE input to enable or disable charge. When an overvoltage condition is detected, the charger process stops, and all power FETs are turned off. Inductor, Capacitor, and Sense Resistor Selection Guidelines The bqSWITCHER provides internal loop compensation. With this scheme, best stability occurs when LC resonant frequency, fo is approximately 16 kHz (8 kHz to 32 kHz). Equation 9 can be used to calculate the value of the output inductor and capacitor. Table 3 provides a summary of typical component values for various charge rates. 1 f0 + 2p ǸL OUT C OUT (9) Table 3. Output Components Summary 0.5 A 1A 2A Output inductor, LOUT CHARGE CURRENT 22 µH 10 µH 4.7 µH Output capacitor, COUT 4.7 µF 10 µF 22 µF (or 2 × 10 µF) ceramic Sense resistor, R(SNS) 0.2 Ω 0.1 Ω 0.05 Ω 18 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 Battery Detection For applications with removable battery packs, bqSWITCHER provides a battery absent detection scheme to reliably detect insertion and/or removal of battery packs. POR or VRCH Detection routine runs on power up and if VBAT drops below refresh threshold due to removing battery or discharging battery. Yes Enable I(DETECT) for t(DETECT) VI(BAT)<V(LOWV) No BATTERY PRESENT, Begin Charge No BATTERY PRESENT, Begin Charge Yes Apply I(WAKE) for t(WAKE) VI(BAT) > VO(REG) -VRCH Yes BATTERY ABSENT Figure 11. Battery Absent Detection for bq2410x ICs only The voltage at the BAT pin is held above the battery recharge threshold, VOREG – VRCH, by the charged battery following fast charging. When the voltage at the BAT pin falls to the recharge threshold, either by a load on the battery or due to battery removal, the bqSWITCHER begins a battery absent detection test. This test involves enabling a detection current, IDISCHARGE1, for a period of tDISCHARGE1 and checking to see if the battery voltage is below the short circuit threshold, VSHORT. Following this, the wake current, IWAKE is applied for a period of tWAKE and the battery voltage is checked again to ensure that it is above the recharge threshold. The purpose of this current is to attempt to close an open battery pack protector, if one is connected to the bqSWITCHER. Passing both of the discharge and charge tests indicates a battery absent fault at the STAT pins. Failure of either test starts a new charge cycle. For the absent battery condition, typically the voltage on the BAT pin rises and falls between 0V and VOVPthresholds indefinitely. Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 19 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com VBAT Battery Connected VOREG No Battery Detected 2V/cell No Battery Detected Yes Battery Detected IWAKE IBAT - IDISCHRG1 t DISCHRG1 tWAKE t DISCHRG1 Figure 12. Battery Detect Timing Diagram Battery Detection Example In order to detect a no battery condition during the discharge and wake tests, the maximum output capacitance should not exceed the following: a. Discharge (IDISCHRG1 = 400 µA, tDISCHRG1 = 1s, VSHORT = 2V) I t DISCHRG1 C MAX_DIS + DISCHRG1 V OREG * V SHORT C MAX_DIS + 400 mA 1s 4.2 V * 2 V C MAX_DIS + 182 mF (10) b. Wake (IWAKE = 2 mA, tWAKE = 0.5 s, VOREG – VRCH = 4.1V) I WAKE t WAKE C MAX_WAKE + ǒVOREG * VRCHǓ * 0 V C MAX_WAKE + 2 mA 0.5s (4.2 V * 0.1 V) * 0V C MAX_WAKE + 244 mF (11) Based on these calculations the recommended maximum output capacitance to ensure proper operation of the battery detection scheme is 100 µF which will allow for process and temperature variations. Figure 13 shows the battery detection scheme when a battery is inserted. Channel 3 is the output signal and Channel 4 is the output current. The output signal switches between VOREG and GND until a battery is inserted. Once the battery is detected, the output current increases from 0A to 1.3A, which is the programmed charge current for this application. 20 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 Figure 13. Battery Detection Waveform When a Battery is Inserted Figure 14 shows the battery detection scheme when a battery is removed. Channel 3 is the output signal and Channel 4 is the output current. When the battery is removed, the output signal goes up due to the stored energy in the inductor and it crosses the VOREG – VRCH threshold. At this point the output current goes to 0A and the IC terminates the charge process and turns on the IDISCHG2 for tDISCHG2. This causes the output voltage to fall down below the VOREG – VRCHG threshold triggering a Battery Absent condition and starting the battery detection scheme. Figure 14. Battery Detection Waveform When a Battery is Removed Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 21 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com Current Sense Amplifier BQ241xx family offers a current sense amplifier feature that translates the charge current into a DC voltage. Figure 15 is a block diagram of this feature. OUT ICHARGE SNS RSNS + KISET2 BAT + - + FASTCHG Disable ISET2 RISET2 Figure 15. Current Sense Amplifier The voltage on the ISET2 pin can be used to calculate the charge current. Equation 12 shows the relationship between the ISET2 voltage and the charge current: VISET2 K(ISET2) I CHARGE + R SNS R ISET2 (12) This feature can be used to monitor the charge current (Figure 16) during the current regulation phase (Fastcharge only) and the voltage regulation phase. The schematic for the application circuit for this waveform is shown in Figure 18 CH3 = Inductor Current CH3 500 mA/div CH1 = ISET2 CH3 0A CH1 200 mV/div CH2 = OUT CH1 0V CH2 16 V CH2 10 V/div t = Time = 200 ms/div Figure 16. Current Sense Amplifier Charge Current Waveform 22 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 bqSWITCHER SYSTEM DESIGN EXAMPLE The following section provides a detailed system design example for the bq24100. System Design Specifications: • • • • • • • 1. VIN = 16V VBAT = 4.2V (1-Cell) ICHARGE = 1.33 A IPRECHARGE = ITERM = 133 mA Safety Timer = 5 hours Inductor Ripple Current = 30% of Fast Charge Current Initiate Charge Temperature = 0°C to 45°C Determine the inductor value (LOUT) for the specified charge current ripple: DI L + I CHARGE I CHARGERipple L OUT + L OUT + ǒVINMAX * VBATǓ VBAT ƒ V INMAX DI L 4.2 (16 * 4.2) (1.1 106) (1.33 16 0.3) L OUT + 7.06 mH (13) Set the output inductor to standard 10 µH. Calculate the total ripple current with using the 10 µH inductor: DI L + DI L + ǒVINMAX * VBATǓ VBAT V INMAX 16 ƒ LOUT 4.2 (16 * 4.2) (1.1 106) (10 10 *6) DI L + 0.282 A (14) Calculate the maximum output current (peak current): DI I LPK + I OUT ) L 2 I LPK + 1.33 ) 0.282 2 I LPK + 1.471 A (15) Use standard 10 µH inductor with a saturation current higher than 1.471A. (i.e., Sumida CDRH74-100) Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 23 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com 2. Determine the output capacitor value (OUT) using 16 kHz as the resonant frequency: 1 ƒo + 2p ǸLOUT COUT 1 C OUT + 4p 2 ƒo C OUT + 4p 2 (16 2 L OUT 1 10 3)2 (10 10 *6) C OUT + 9.89 mF (16) Use standard value 10 µF, 25V, X5R, ±20% ceramic capacitor (i.e., Panasonic 1206 ECJ-3YB1E106M 3. Determine the sense resistor using the following equation: V R SNS + RSNS I CHARGE (17) In order to get better current regulation accuracy (±10%), let VRSNS be between 100 mV and 200 mV. Use VRSNS = 100 mV and calculate the value for the sense resistor. R SNS + 100 mV 1.33 A R SNS + 0.075 W (18) This value is not standard in resistors. If this happens, then choose the next larger value which in this case is 0.1Ω. Using the same equation (15) the actual VRSNS will be 133mV. Calculate the power dissipation on the sense resistor: P RSNS + I CHARGE P RSNS + 1.332 2 R SNS 0.1 P RSNS + 176.9 mW (19) Select standard value 100 mΩ, 0.25W 0805, 1206 or 2010 size, high precision sensing resistor. (i.e., Vishay CRCW1210-0R10F) 4. Determine ISET 1 resistor using the following equation: K V ISET1 R ISET1 + ISET1 RSNS I CHARGE R ISET1 + 1000 1.0 0.1 1.33 R ISET1 + 7.5 kW (20) Select standard value 7.5 kΩ, 1/16W ±1% resistor (i.e., Vishay CRCWD0603-7501-F) 5. Determine ISET 2 resistor using the following equation: KISET2 VISET2 R ISET2 + RSNS I PRECHARGE R ISET2 + 1000 0.1 0.1 0.133 R ISET2 + 7.5 kW (21) Select standard value 7.5 kΩ, 1/16W ±1% resistor (i.e., Vishay CRCWD0603-7501-F) 24 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 6. Determine TTC capacitor (TTC) for the 5.0 hours safety timer using the following equation: t C TTC + CHARGE K TTC C TTC + 300 m 2.6 mńnF C TTC + 115.4 nF (22) Select standard value 100 nF, 16V, X7R, ±10% ceramic capacitor (i.e., Panasonic ECJ-1VB1C104K). Using this capacitor the actual safety timer will be 4.3 hours. 7. Determine TS resistor network for an operating temperature range from 0°C to 45°C. VTSB RT1 TS RTH RT2 103AT Figure 17. TS Resistor Network Assuming a 103AT NTC Thermistor on the battery pack, determine the values for RT1 and RT2 using the following equations: VO(VTSB) ´ RTHCOLD ´ RTHHOT ´ 1 - 1 VLTF VHTF RT2 = RTHHOT ´ ( VO(VTSB) -1 VHTF VO(VTSB) -1 VLTF RT1 = 1 + 1 RT2 RTHCOLD ) - RTHCOLD ´ ( VO(VTSB) -1 VLTF ) Where: VLTF = VO(VTSB) ´ % LTF¸100 / 100 VHTF = VO(VTSB) ´ % HTF¸100 / 100 (23) RTH COLD + 27.28 kW RTH HOT + 4.912 kW RT1 + 9.31 kW RT2 + 442 kW Copyright © 2004–2008, Texas Instruments Incorporated (24) Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 25 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com APPLICATION INFORMATION Charging Battery and Powering System Without Affecting Battery Charge and Termination RSYS LOUT BQ24100 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done 3 Charge IN OUT 1 4 IN 6 VCC 2 STAT1 PGND 18 OUT 20 PGND 17 RSNS 10 mH D1 COUT 0.1W Battery Pack Pack+ 10 mF Pack- MMBZ18VALT1 103AT 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 7.5 KW VTSB ISET1 8 7.5 KW CTTC 16 CE 9.31 KW ISET2 9 0.1 mF 10 VSS 0.1 mF 13 NC TS 12 VTSB 11 442 KW 0.1 mF 0.1 mF Figure 18. Application Circuit for Charging a Battery and Powering a System Without Affecting Termination The bqSWITCHER was designed as a stand-alone battery charger but can be easily adapted to power a system load, while considering a few minor issues. Advantages: 1. The charger controller is based only on what current goes through the current-sense resistor (so precharge, constant current, and termination all work well), and is not affected by the system load. 2. The input voltage has been converted to a usable system voltage with good efficiency from the input. 3. Extra external FETs are not needed to switch power source to the battery. 4. The TTC pin can be grounded to disable termination and keep the converter running and the battery fully charged, or let the switcher terminate when the battery is full and then run off of the battery via the sense resistor. Other Issues: 1. If the system load current is large (≥ 1 A), the IR drop across the battery impedance causes the battery voltage to drop below the refresh threshold and start a new charge. The charger would then terminate due to low charge current. Therefore, the charger would cycle between charging and termination. If the load is smaller, the battery would have to discharge down to the refresh threshold resulting in a much slower cycling. Note that grounding the TTC pin keeps the converter on continuously. 2. If TTC is grounded, the battery is kept at 4.2 V (not much different than leaving a fully charged battery set unloaded). 3. Efficiency declines 2-3% hit when discharging through the sense resistor to the system. 26 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 Using bq24105 to Charge the LiFePO4 Battery The LiFePO4 battery has many unique features such as a high thermal runaway temperature, discharge current capability, and charge current. These special features make it attractive in many applications such as power tools. The recommended charge voltage is 3.6 V and termination current is 50 mA. Figure 19 shows an application circuit for charging one cell LiFePO4 using bq24105. The charge voltage is 3.6 V and recharge voltage is 3.516 V. The fast charging current is set to 1.33 A while the termination current is 50 mA. This circuit can be easily changed to support two or three cell applications. However, only 84 mV difference between regulation set point and rechargeable threshold makes it frequently enter into recharge mode when small load current is applied. This can be solved by lower down the recharge voltage threshold to 200 mV to discharge more energy from the battery before it enters recharge mode again. See the application report, Using the bq24105/25 to Charge LiFePO4 Battery (SLUA443), for additional details. The recharge threshold should be selected according to real application conditions. LOUT BQ24105 VIN CIN 1.5 KW 10 mF 1.5 KW Adapter Present 1.5 KW Done Charge 3 IN OUT 1 4 IN OUT 20 6 VCC RSNS 10 mH COUT D1 Battery Pack Pack+ 0.1W 10 mF Pack- MMBZ18VALT1 PGND 17 103AT 2 STAT1 PGND 18 19 STAT2 5 PG 7 TTC SNS 15 BAT 14 ISET1 8 7.5 KW RISET1 VTSB 20 KW CTTC 16 CE ISET2 9 0.1 mF 10 VSS 0.1 mF 13 FB 9.31 KW RT1 442 KW RT2 RISET2 TS 12 VTSB 11 0.1 mF 0.1 mF 143 KW 200 KW Figure 19. 1-Cell LiFePO4 Application Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 27 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com THERMAL CONSIDERATIONS The SWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal pad to provide an effective thermal contact between the IC and the printed circuit board (PCB). Full PCB design guidelines for this package are provided in the application report entitled: QFN/SON PCB Attachment (SLUA271). The most common measure of package thermal performance is thermal impedance (θJA) measured (or modeled) from the chip junction to the air surrounding the package surface (ambient). The mathematical expression for θJA is: T * TA q (JA) + J P (25) Where: TJ = chip junction temperature TA = ambient temperature P = device power dissipation Factors that can greatly influence the measurement and calculation of θJA include: • Whether or not the device is board mounted • Trace size, composition, thickness, and geometry • Orientation of the device (horizontal or vertical) • Volume of the ambient air surrounding the device under test and airflow • Whether other surfaces are in close proximity to the device being tested The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal power FET. It can be calculated from the following equation: P = [Vin × lin - Vbat × Ibat] Due to the charge profile of Li-xx batteries, the maximum power dissipation is typically seen at the beginning of the charge cycle when the battery voltage is at its lowest. (See Figure 9.) 28 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 www.ti.com .................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 PCB LAYOUT CONSIDERATION It is important to pay special attention to the PCB layout. The following provides some guidelines: • To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placed as close as possible to the bqSWITCHER. The output inductor should be placed directly above the IC and the output capacitor connected between the inductor and PGND of the IC. The intent is to minimize the current path loop area from the OUT pin through the LC filter and back to the GND pin. The sense resistor should be adjacent to the junction of the inductor and output capacitor. Route the sense leads connected across the R(SNS) back to the IC, close to each other (minimize loop area) or on top of each other on adjacent layers (do not route the sense leads through a high-current path). Use an optional capacitor downstream from the sense resistor if long (inductive) battery leads are used. • Place all small-signal components (CTTC, RSET1/2 and TS) close to their respective IC pin (do not place components such that routing interrupts power stage currents). All small control signals should be routed away from the high current paths. • The PCB should have a ground plane (return) connected directly to the return of all components through vias (3 vias per capacitor for power-stage capacitors, 3 vias for the IC PGND, 1 via per capacitor for small-signal components). A star ground design approach is typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A single ground plane for this design gives good results. With this small layout and a single ground plane, there is not a ground-bounce issue, and having the components segregated minimizes coupling between signals. • The high-current charge paths into IN and from the OUT pins must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be connected to the ground plane to return current through the internal low-side FET. The thermal vias in the IC PowerPAD™ provide the return-path connection. • The bqSWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal pad to provide an effective thermal contact between the IC and the PCB. Full PCB design guidelines for this package are provided in the application report entitled: QFN/SON PCB Attachment (SLUA271). Six 10-13 mil vias are a minimum number of recommended vias, placed in the IC's power pad, connecting it to a ground thermal plane on the opposite side of the PWB. This plane must be at the same potential as VSS and PGND of this IC. • See user guide SLUU200 for an example of good layout. WAVEFORMS: All waveforms are taken at Lout (IC Out pin). VIN = 7.6 V and the battery was set to 2.6 V, 3.5 V, and 4.2 V for the three waveforms. When the top switch of the converter is on, the waveform is at ~7.5 V, and when off, the waveform is near ground. Note that the ringing on the switching edges is small. This is due to a tight layout (minimized loop areas), a shielded inductor (closed core), and using a low-inductive scope ground lead (i.e., short with minimum loop) . Copyright © 2004–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 29 bq24100,, bq24103,, bq24103A bq24104, bq24105, bq24108, bq24109 bq24113, bq24113A, bq24115 SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 .................................................................................................................................................. www.ti.com Precharge: The current is low in precharge; so, the bottom synchronous FET turns off after its minimum on-time which explains the step between ≈0 V and -0.5 V. When the bottom FET and top FET are off, the current conducts through the body diode of the bottom FET which results in a diode drop below the ground potential. The initial negative spike is the delay turning on the bottom FET, which is to prevent shoot-through current as the top FET is turning off. Fast Charge: This is captured during the constant-current phase. The two negative spikes are the result of the short delay when switching between the top and bottom FETs. The break-before-make action prevents current shoot-through and results in a body diode drop below ground potential during the break time. Charge during Voltage Regulation and Approaching Termination: Note that this waveform is similar to the precharge waveform. The difference is that the battery voltage is higher so the duty cycle is slightly higher. The bottom FET stays on longer because there is more of a current load than during precharge; it takes longer for the inductor current to ramp down to the current threshold where the synchronous FET is disabled. 30 Submit Documentation Feedback Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 PACKAGE OPTION ADDENDUM www.ti.com 19-Dec-2008 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty 50 Call TI MSL Peak Temp (3) BQ24100RHL PREVIEW QFN RHL 20 BQ24100RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24103ARHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24103ARHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24103ARHLT ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24103ARHLTG4 ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24103RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24104RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24104RHLT ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24105RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24105RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24108RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24108RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24109RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24109RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24109RHLT ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24109RHLTG4 ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24113ARHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24113ARHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24113ARHLT ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24113ARHLTG4 ACTIVE QFN RHL 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24113RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24113RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24115RHLR ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ24115RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Addendum-Page 1 TBD Lead/Ball Finish Call TI PACKAGE OPTION ADDENDUM www.ti.com 19-Dec-2008 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 24-Dec-2008 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel Diameter Width (mm) W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ24100RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24103ARHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24103ARHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24103RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24104RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24104RHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24105RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24108RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24109RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24109RHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24113ARHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24113ARHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24113RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 BQ24115RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 24-Dec-2008 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ24100RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24103ARHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24103ARHLT QFN RHL 20 250 190.5 212.7 31.8 BQ24103RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24104RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24104RHLT QFN RHL 20 250 190.5 212.7 31.8 BQ24105RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24108RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24109RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24109RHLT QFN RHL 20 250 190.5 212.7 31.8 BQ24113ARHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24113ARHLT QFN RHL 20 250 190.5 212.7 31.8 BQ24113RHLR QFN RHL 20 3000 346.0 346.0 29.0 BQ24115RHLR QFN RHL 20 3000 346.0 346.0 29.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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