BT138X-600E 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate "series E" triac is intended for gate triggering by low power drivers and microcontrollers. 1.2 Features and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Isolated package • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Triggering in all four quadrants 1.3 Applications • General purpose motor control • General purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 95 A Tj junction temperature - - 125 °C IT(RMS) RMS on-state current - - 12 A - 2.5 10 mA full sine wave; Th ≤ 56 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT138X-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; - 4 10 mA - 5 10 mA - 11 25 mA - 150 - V/µs Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated mb Graphic symbol T2 T1 G sym051 1 2 3 TO-220F (SOT186A) 3. Ordering information Table 3. Ordering information Type number Package BT138X-600E Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage BT138X-600E Product data sheet Conditions All information provided in this document is subject to legal disclaimers. 27 July 2012 Min Max Unit - 600 V © NXP B.V. 2012. All rights reserved 2 / 13 BT138X-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Max Unit IT(RMS) RMS on-state current full sine wave; Th ≤ 56 °C; Fig. 1; Fig. 2; - 12 A - 95 A - 105 A Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I t for fusing tp = 10 ms; sine-wave pulse - 45 A s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs 2 2 2 T2+ G+ IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aaj939 15 IT(RMS) (A) 12 Fig. 1. 56 °C (A) 80 9 60 6 40 3 20 0 -50 0 50 100 Th (°C) 0 150 RMS on-state current as a function of heatsink temperature; maximum values BT138X-600E Product data sheet 003aaj941 100 IT(RMS) 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Th = 56 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 3 / 13 BT138X-600E NXP Semiconductors 4Q Triac 003aaj943 20 Ptot (W) 16 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 12 Th(max) (°C) 61 α = 180° 120° α 45 90° 77 60° 30° 8 93 4 109 0 0 3 6 9 12 125 15 IT(RMS) (A) α = conduction angle Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaj944 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f 0 Tj(init) = 25 °C max 1 102 10 number of cycles (n) 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 4 / 13 BT138X-600E NXP Semiconductors 4Q Triac 003aaj945 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 10-1 tp (s) tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full or half cycle; with heatsink compound; Fig. 6 - - 4 K/W full or half cycle; without heatsink compound; Fig. 6 - - 5.5 K/W thermal resistance from junction to ambient in free air - 55 - K/W Rth(j-a) BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 5 / 13 BT138X-600E NXP Semiconductors 4Q Triac 003aaj342 10 Zth(j-h) (K/W) (1) (2) 1 (3) (4) 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink ; f = 1 MHz; Th = 25 °C - 10 - pF Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 6 / 13 BT138X-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G+; - 11 25 mA - - 30 mA - - 40 mA - - 30 mA - - 40 mA Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA VT on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1.5 V 0.25 0.4 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; (VDM = 67% - 150 - V/µs - 2 - µs Fig. 11 VD = 600 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 16 A; VD = 600 V; IG = 0.2 A; dIG/ time dt = 5 A/µs BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 7 / 13 BT138X-600E NXP Semiconductors 4Q Triac 003aaj946 3 IGT IGT(25°C) 003aaj947 3 IL IL(25°C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 -50 1 (4) 0 50 100 Tj (°C) 0 -50 150 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aaj948 3 003aaj949 40 IT (A) IH IH(25°C) 30 2 20 1 (1) (2) (3) 10 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 0.5 1 1.5 2 2.5 VT (V) Vo = 1.175 V; Rs = 0.0316 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 8 / 13 BT138X-600E NXP Semiconductors 4Q Triac 003aaj950 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 9 / 13 BT138X-600E NXP Semiconductors 4Q Triac 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION REFERENCES IEC SOT186A JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 12. TO-220F (SOT186A) BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 10 / 13 BT138X-600E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 9. 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BT138X-600E Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Limiting values .......................................................2 5 Thermal characteristics .........................................5 6 Isolation characteristics ........................................6 7 Characteristics ....................................................... 6 8 Package outline ................................................... 10 9 9.1 9.2 9.3 9.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 July 2012 BT138X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 27 July 2012 © NXP B.V. 2012. All rights reserved 13 / 13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: BT138X-600E,127 BT138X-600E