CYStech Electronics Corp. Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2097LI3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1326LI3 Symbol Outline TO-251 BTD2097LI3 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD(TA=25℃) PD(TC=25℃) Tj Tstg Limits 40 15 6 5 8 (Note 1) 1 10 150 -55~+150 Unit V V V A A W W °C °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. BTD2097LI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 15 6 180 160 - Typ. 0.25 150 Max. 0.1 0.1 0.5 820 50 Unit V V V µA µA V MHz pF Test Conditions IC=50µA, IB=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE1 Rank Range BTD2097LI3 R 180~390 S 270~560 T 390~820 CYStek Product Specification Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) VCE(SAT) Current Gain---HFE VCE=5V VCE=2V VCE=1V 100 IC=100IB IC=60IB 10 IC=30IB IC=10IB 1 100 1 10 100 1000 1 10000 Collector Current---IC(mA) 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 1.2 10000 VBE(SAT) @ IC=10IB Power Dissipation---PD(W) Saturation Voltage---(mV) 10 1000 100 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 50 100 150 200 Case Temperature---TC(℃) BTD2097LI3 CYStek Product Specification Spec. No. : C850I3 Issued Date : 2004.02.27 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D D2097 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2097LI3 CYStek Product Specification