BYV52/PI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOT93, or TOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOT93 (Plastic) isolated TOP3I (Plastic) BYV52-200 BYV52PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) Parameter Average forward current SOT93 δ = 0.5 TOP3I Surge non repetitive forward current Tstg Tj Storage and junction temperature range Symbol October 1999 Unit Per diode 50 A Tc=110°C Per diode 30 A Tc=90°C Per diode 30 tp=10ms sinusoidal Per diode 500 A - 40 to + 150 - 40 to + 150 °C °C RMS forward current IFSM VRRM Value Parameter Repetitive peak reverse voltage Ed : 2C Value Unit 200 V 1/6 BYV52/PI THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case SOT93 Value Unit 1.2 °C/W Per diode 0.75 Total TOP3I Rth (c) Coupling Per diode 1.8 Total 1.2 SOT93 0.3 TOP3I 0.6 °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 25 µA 2.5 mA V Tj = 125°C IF = 20 A 0.85 Tj = 125°C IF = 40 A 1.00 Tj = 25°C IF = 40 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. IF = 0.5A IR = 1A Irr = 0.25A 35 IF = 1A VR = 30V dIF/dt = -50A/µs 50 Unit ns tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V 2/6 BYV52/PI Fig.1 : Average forward power dissipation versus average forward current. 40 P F(av)(W) IM(A) 35 =1 =0.5 =0.2 =0.1 30 =0.05 25 20 T 15 10 5 IF(av)(A) 0 0 Fig.2 : Peak current versus form factor. 5 10 15 =tp/T 20 25 tp 30 35 Fig.3 : Forward voltage drop versus forward current (maximum values). 500 450 400 350 300 250 200 150 100 50 0 0 =tp/T tp P=10W P=30W 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 K 1.8 1.6 IM Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 VFM(V) T P=20W Zth(j-c) (tp. ) K = Rth(j-c) Tj= 125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 = 0 .1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 300 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. (SOD93) 300 IM(A) 1.0E-02 1.0E-01 tp 1. 0E+00 Fig.6 : Non repetitive surge peak forward current versus overload duration. (TOP3I) 250 250 =tp/T tp(s) 0.1 IM(A) 200 200 150 Tc=25 oC 150 Tc=25 o C 100 100 Tc=50 o C IM 50 t Tc=110 oC t(s) =0.5 0 0.001 0.01 Tc=50 o C IM 50 Tc=90 o C t t(s) =0.5 0.1 1 0 0.001 0.01 0.1 1 3/6 BYV52/PI Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) 35 versus ambient IF(av)(A) 35 Rth(j-a)=Rth(j-c) 30 =0.5 25 T Rth(j-a)=Rth(j-c) =0.5 25 =tp/T 15 tp 10 T =tp/T tp 10 Rth(j-a)=15 o C/W Rth(j-a)=15 o C/W 5 5 Tamb( o C) 0 0 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). F=1Mhz Tj=25 oC 11 0 1 00 1 Tamb( o C) 0 0 20 40 60 80 100 120 140 160 Fig.10 : Recovery charges versus dIF/dt. QRR(nC) C(pF) 1 50 1 40 1 30 1 20 VR(V) 10 1 00 2 00 Fig.11 : Peak reverse current versus dIF/dt. 1 00 90 90%CONFIDENCE 80 IF=IF(av) 70 Tj=100 OC 60 50 40 Tj=25 O C 30 20 10 dIF/dt(A/us) 0 1 10 100 Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] IRM(A) 1.50 90%CONFIDENCE 2.5 ambient 20 15 3.0 versus IF(av)(A) 30 20 20 0 1 90 1 80 1 70 1 60 Fig.8 : Average current temperature. (duty cycle : 0.5) (TOP3I) IF=IF(av) 1.25 Tj=100 O C 2.0 1.00 1.5 0.75 1.0 0.50 IRM QRR Tj=25 O C 0.5 0.0 1 4/6 0.25 dIF/dt(A/us) 20 10 100 0.00 0 Tj( o C) 25 50 75 100 125 150 BYV52/PI PACKAGE MECHANICAL DATA SOD93 REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.70 4.90 0.185 0.193 1.17 1.37 0.046 0.054 2.50 0.098 1.27 0.050 0.50 0.78 0.020 0.031 1.10 1.30 0.043 0.051 1.75 0.069 10.80 11.10 0.425 0.437 14.70 15.20 0.578 0.598 12.20 0.480 16.20 0.638 18.0 0.709 3.95 4.15 0.156 0.163 31.00 1.220 4.00 4.10 0.157 0.161 Marking : Type number Cooling method : C Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/6 BYV52/PI PACKAGE MECHANICAL DATA TOP3I (isolated) DIMENSIONS REF. Millimeters Inches A B C D E F G H J K L P R Min. Max. 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 5.4 5.65 3.4 3.65 4.08 4.17 1.20 1.40 4.60 typ. Min. Max. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.213 0.222 0.134 0.144 0.161 0.164 0.047 0.055 0.181 typ. Marking : Type number Cooling method : C Weight : 4.46 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. 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