BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE FEATURES • Sillicon Planar Zener Diode • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering : 260 OC/10 sec. at terminals • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOD-123FL Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0168 grams ABSOLUTE MAXIMUM RATINGS (TA=25OC , unless otherwise specified) Parameter Test conditon Symbol Value Units PTOT PTOT 2.3 0.8 (note 1) W 100 µs square pulse(note 2) PZSM 300 10/1000 µs waveform (BZD27-C7V5P to BZD27-C75P) PRSM 150 O TL =80 C TA =25 OC Power dissipation Non-repetitive peak pulse power dissipation W THERMAL CHARACTERISTICS (TA=25OC , unless otherwise noted) P a ra me te r Te s t c o n d i t i o n S ym b o l Va l ue U ni t The r m a l r e s i s t a nc e j unc t i o n t o a m b i e nt a i r R θJ A 180 K /W The r m a l r e s i s t a nc e j unc t i o n t o l e a d R θJ L 30 K /W M a xi m um j unc t i o n t e m p e r a t ur e ΤJ 150 O C S t o r a g e t e m p e r a t ur e r a ng e Ts -5 5 to + 1 5 0 O C ELCTRICAL CHARACTERISTICS PA RA M E TE R F o r w a r d vo l t a g e Te s t c o n d i t i o n S ym b o l IF = 0 . 2 A VF Mi n Ty p Max U ni t s 1.2 V NOTES: 1. Mounted on epoxy-glass PCB with 3X3 mm Cu pads (>40µm thick) 2. T J =25 O C prior to surge STAD-JAN.12.2007 PAGE . 1 BZD27C3V6P~BZD27C75P Nomi nal Zener Voltage Part Number Max Reverse Leakage C urrent Max. Zener Impedance VZ@IZT ZZT@IZT ZZK@IZK Marki ng C ode IR@VR Nom. V Mi n. V Max. V Ω mA Ω mA µA V BZD 27C 3V6P 3.6 3.42 3.78 8 100 400 1 100 1 3V 6 BZD 27C 3V9P 3.9 3.71 4.10 8 100 400 1 50 1 3V 9 BZD 27C 4V3P 4.3 4.09 4.52 7 100 400 1 25 1 4V 3 BZD 27C 4V7P 4.7 4.47 4.94 7 100 500 1 10 1 4V 7 BZD 27C 5V1P 5.1 4.85 5.36 6 100 550 1 5 1 5V 1 BZD 27C 5V6P 5.6 5.32 5.88 4 100 600 1 10 2 5V 6 BZD 27C 6V0P 6.0 5.70 6.30 3 100 600 1 8 2 6V 1 BZD 27C 6V2P 6.2 5.89 6.51 3 100 700 1 5 2 6V 2 BZD 27C 6V8P 6.8 6.46 7.14 3 100 700 1 10 3 6V 8 BZD 27C 7V5P 7.5 7.13 7.88 2 100 700 0.5 50 3 7V 5 BZD 27C 8V2P 8.2 7.79 8.61 2 100 700 0.5 10 3 8V 2 BZD 27C 8V7P 8.7 8.27 9.14 3 50 700 0.5 10 4 8V 7 BZD 27C 9V1P 9.1 8.65 9.56 4 50 700 0.5 10 5 9V 1 BZD 27C 10P 10 9.50 10.50 4 50 700 0.25 7 7.5 10P BZD 27C 11P 11 10.45 11.55 7 50 700 0.25 4 8.2 11P BZD 27C 12P 12 11.40 12.60 7 50 700 0.25 3 9.1 12P BZD 27C 13P 13 12.35 13.65 10 50 700 0.25 2 10 13P BZD 27C 14P 14 13.30 14.70 10 50 700 0.25 2 11 14P BZD 27C 15P 15 14.25 15.75 10 50 700 0.25 1 11 15P BZD 27C 16P 16 15.20 16.80 15 25 700 0.25 1 12 16P BZD 27C 17P 17 16.15 17.85 15 25 750 0.25 1 13 17P BZD 27C 18P 18 17.10 18.90 15 25 750 0.25 1 13 18P BZD 27C 19P 19 18.05 19.95 15 25 750 0.25 1 14 19P BZD 27C 20P 20 19.00 21.0 15 25 750 0.25 1 15 20P BZD 27C 22P 22 20.90 23.10 15 25 750 0.25 1 16 22P BZD 27C 24P 24 22.80 25.20 15 25 750 0.25 1 18 24P BZD 27C 25P 25 23.75 26.25 15 25 750 0.25 1 19 25P BZD 27C 27P 27 25.65 28.35 15 25 1000 0.25 1 20 27P BZD 27C 28P 28 26.60 29.40 15 25 1000 0.25 1 21 28P BZD 27C 30P 30 28.50 31.50 15 25 1000 0.25 1 22 30P BZD 27C 33P 33 31.35 34.65 15 25 1000 0.25 1 24 33P BZD 27C 36P 36 34.20 37.80 40 10 1000 0.25 1 27 36P BZD 27C 39P 39 37.05 40.95 40 10 1000 0.25 1 30 39P BZD 27C 43P 43 40.85 45.15 45 10 1500 0.25 1 33 43P BZD 27C 47P 47 44.65 49.35 45 10 1500 0.25 1 36 47P BZD 27C 51P 51 48.45 53.55 60 10 1500 0.25 1 39 51P BZD 27C 56P 56 53.2 58.8 60 10 2000 0.25 1 43 56P BZD 27C 62P 62 58.9 65.1 80 10 2000 0.25 1 47 62P BZD 27C 68P 68 64.6 71.4 80 10 2000 0.25 1 51 68P BZD 27C 75P 75 71.25 78.75 100 10 2000 0.25 1 56 75P STAD-JAN.12.2007 PAGE . 2 BZD27C3V6P~BZD27C75P O Max. Pulse Power Dissipation ( W ) Typical Characteristics (T A =25 C unless otherwise specified) IF - Forward Current (A) 10.00 Typ. VF Max. VF 1.00 160 140 120 100 80 60 40 20 0 RSM 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 P 0 25 V F - Forward Current vs. Forward Voltage Figure1. Forward Current vs. Forward Voltage C D - Typ. Junction Capacitance ( pF ) 50 75 V znom - Z e n e r Vo l t a g e ( V ) Figure4. Maximum Pulse Power Dissipation vs. Zener Voltage 10000 C5V1P C6V8P IRSM (%) 100 90 C18P C12P 1000 t1 = 10 ms t2 = 1000 ms 50 100 C27P C51P 10 10 0.0 0.5 1.0 1.5 2.0 2.5 V R - Reverse Voltage (V) t t1 3.0 t2 Figure2. Typ. Diode Capacitance vs. Reverse Voltage Figure5. Non-Repetitive Peak Reverse Current Pulse Definition Ptot ower D is s ipat ion ( W ) 3.0 tie point temperature 2.5 2.0 1.5 ambient temperature 1.0 0.5 0.0 0 25 50 75 100 125 150 O TA - Ambient Temperature ( C) Figure3. Power Dissipation vs. Ambient Temperature STAD-JAN.12.2007 q PAGE . 3 BZD27C3V6P~BZD27C75P MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2008 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JAN.12.2007 PAGE . 4