DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BZT03 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Jun 11 Philips Semiconductors Product specification Voltage regulator diodes BZT03 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pack. 2/3 page k(Datasheet) construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM204 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation CONDITIONS MIN. MAX. UNIT Ttp = 25 °C; lead length 10 mm; see Fig.2 − 3.25 W Tamb = 45 °C; see Fig.2; PCB mounted (see Fig.6) − 1.30 W − 10 W PZRM repetitive peak reverse power dissipation PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Fig.3 − 600 W PRSM non-repetitive peak reverse power dissipation 10/1000 µs exponential pulse (see Fig.4); Tj = 25 °C prior to surge − 300 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 11 2 Philips Semiconductors Product specification Voltage regulator diodes BZT03 series ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS forward voltage VF MAX. IF = 0.5 A; see Fig.5 1.2 UNIT V Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX WORKING VOLTAGE VZ (V) at IZ DIFFERENTIAL TEMPERATURE TEST RESISTANCE COEFFICIENT CURRENT rdif (Ω) at IZ SZ (%/K) at IZ (1) MIN. NOM. MAX. TYP. MAX. MIN. MAX. IZ (mA) REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. VR (V) C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 750 C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 600 6.2 C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 20 6.8 C10 9.4 10 10.6 2 4 0.05 0.09 50 10 7.5 C11 10.4 11 11.6 4 7 0.05 0.10 50 4 8.2 C12 11.4 12 12.7 4 7 0.05 0.10 50 3 9.1 C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36 C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68 1996 Jun 11 3 5.6 Philips Semiconductors Product specification Voltage regulator diodes TYPE No. SUFFIX WORKING VOLTAGE VZ (V) at IZ BZT03 series DIFFERENTIAL TEMPERATURE TEST RESISTANCE COEFFICIENT CURRENT rdif (Ω) at IZ SZ (%/K) at IZ (1) MIN. NOM. MAX. TYP. MAX. MIN. MAX. IZ (mA) REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. VR (V) C100 94 100 106 60 200 0.09 0.13 5 1 75 C110 104 110 116 80 250 0.09 0.13 5 1 82 C120 114 120 127 80 250 0.09 0.13 5 1 91 C130 124 130 141 110 300 0.09 0.13 5 1 100 C150 138 150 156 130 300 0.09 0.13 5 1 110 C160 153 160 171 150 350 0.09 0.13 5 1 120 C180 168 180 191 180 400 0.09 0.13 5 1 130 C200 188 200 212 200 500 0.09 0.13 5 1 150 C220 208 220 233 350 750 0.09 0.13 2 1 160 C240 228 240 256 400 850 0.09 0.13 2 1 180 C270 251 270 289 450 1000 0.09 0.13 2 1 200 Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100. 1996 Jun 11 4 Philips Semiconductors Product specification Voltage regulator diodes BZT03 series Per type when used as transient suppressor diodes Tj = 25 °C unless otherwise specified. TYPE NUMBER REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT TEST CURRENT V(BR)R (V) at Itest SZ (%/K) at Itest Itest (mA) V(CL)R (V) CLAMPING VOLTAGE at IRSM (A) note 1 IR (µA) MIN. MAX. BZT03-C10 7.0 7.7 8.5 9.4 0.00 0.03 0.03 0.05 0.07 0.08 0.08 0.09 100 100 50 50 11.3 12.3 13.3 14.8 26.5 24.4 22.7 20.3 1500 1200 100 20 6.2 6.8 7.5 8.2 BZT03-C11 10.4 0.05 0.10 50 15.7 19.1 5 9.1 BZT03-C12 11.4 0.05 0.10 50 17.0 17.7 5 10 BZT03-C13 12.4 0.05 0.10 50 18.9 15.9 5 11 BZT03-C15 13.8 0.05 0.10 50 20.9 14.4 5 12 BZT03-C16 15.3 0.06 0.11 25 22.9 13.1 5 13 BZT03-C18 16.8 0.06 0.11 25 25.6 11.7 5 15 BZT03-C20 18.8 0.06 0.11 25 28.4 10.6 5 16 BZT03-C22 20.8 0.06 0.11 25 31.0 9.7 5 18 BZT03-C24 22.8 0.06 0.11 25 33.8 8.9 5 20 BZT03-C27 25.1 0.06 0.11 25 38.1 7.9 5 22 BZT03-C30 28 0.06 0.11 25 42.2 7.1 5 24 BZT03-C33 31 0.06 0.11 25 46.2 6.5 5 27 BZT03-C36 34 0.06 0.11 10 50.1 6.0 5 30 BZT03-C39 37 0.06 0.11 10 54.1 5.5 5 33 BZT03-C43 40 0.07 0.12 10 60.7 4.9 5 36 BZT03-C47 44 0.07 0.12 10 65.5 4.6 5 39 BZT03-C51 48 0.07 0.12 10 70.8 4.2 5 43 BZT03-C56 52 0.07 0.12 10 78.6 3.8 5 47 BZT03-C62 58 0.08 0.13 10 86.5 3.5 5 51 BZT03-C68 64 0.08 0.13 10 94.4 3.2 5 56 BZT03-C75 70 0.08 0.13 10 103.5 2.9 5 62 BZT03-C82 77 0.08 0.13 10 114.0 2.6 5 68 BZT03-C91 85 0.09 0.13 5 126 2.4 5 75 BZT03-C100 94 0.09 0.13 5 139 2.2 5 82 BZT03-C110 104 0.09 0.13 5 152 2.0 5 91 BZT03-C120 114 0.09 0.13 5 167 1.8 5 100 BZT03-C130 124 0.09 0.13 5 185 1.6 5 110 BZT03-C150 138 0.09 0.13 5 204 1.5 5 120 BZT03-C160 153 0.09 0.13 5 224 1.3 5 130 1996 Jun 11 5 MAX. at VR (V) MIN. BZT03-C7V5 BZT03-C8V2 BZT03-C9V1 MAX. REVERSE CURRENT at STAND-OFF VOLTAGE Philips Semiconductors Product specification Voltage regulator diodes TYPE NUMBER BZT03 series REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT TEST CURRENT V(BR)R (V) at Itest SZ (%/K) at Itest Itest (mA) MIN. MIN. MAX. CLAMPING VOLTAGE V(CL)R (V) MAX. at IRSM (A) note 1 REVERSE CURRENT at STAND-OFF VOLTAGE IR (µA) MAX. at VR (V) BZT03-C180 168 0.09 0.13 5 249 1.2 5 150 BZT03-C200 188 0.09 0.13 5 276 1.1 5 160 BZT03-C220 BZT03-C240 BZT03-C270 BZT03-C300 BZT03-C330 BZT03-C360 BZT03-C390 BZT03-C430 BZT03-C470 BZT03-C510 208 228 251 280 310 340 370 400 440 480 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 2 2 2 2 2 2 2 2 2 2 305 336 380 419 459 498 537 603 655 707 1.0 0.9 0.8 0.72 0.65 0.60 0.56 0.50 0.45 0.42 5 5 5 5 5 5 5 5 5 5 180 200 220 240 270 300 330 360 390 430 Note 1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 46 K/W 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6. For more information please refer to the “General Part of associated Handbook”. 1996 Jun 11 6 Philips Semiconductors Product specification Voltage regulator diodes BZT03 series GRAPHICAL DATA MBH534 4 MBH535 104 handbook, halfpage handbook, halfpage Ptot PZSM (W) (W) 3 103 2 102 1 10 10−2 0 0 100 T (°C) 200 1 tp (ms) 10 Tj = 25 °C prior to surge. Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig 6. Fig.3 Fig.2 10−1 Maximum total power dissipation as a function of temperature. IRSMhalfpage handbook, Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). MBH536 3 handbook, halfpage (%) IF (A) 100 90 2 50 1 10 t t1 0 t2 0 MGD521 In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Fig.4 1996 Jun 11 1 VF (V) 2 Tj = 25 °C. Non-repetitive peak reverse current pulse definition. Fig.5 7 Forward current as a function of forward voltage; typical values. Philips Semiconductors Product specification Voltage regulator diodes BZT03 series 50 handbook, halfpage 25 7 50 2 3 MGA200 Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. 1996 Jun 11 8 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max BZT03 series a 28 min 0.81 max MBC880 Fig.7 SOD57. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 11 9