DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N5225B to 1N5267B Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes 1N5225B to 1N5267B FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. • Tolerance series: ±5% The series consists of 43 types with nominal working voltages from 3.0 to 75 V. • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage k a APPLICATIONS MAM239 • Low-power voltage stabilizers or voltage references. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. − 250 UNIT IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge mA Ptot total power dissipation Tamb = 50 °C; lead length max.; note 1 − 400 mW Lead length 8 mm; note 2 − 500 mW PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 − 40 W tp = 8.3 ms; square wave; Tj ≤ 55 °C prior to surge − 10 W see Table “Per type” Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature ≤ 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj = 25 °C; unless otherwise specified. SYMBOL VF 1996 Apr 26 PARAMETER forward voltage CONDITIONS IF = 200 mA; see Fig.4 2 MAX. UNIT 1.1 V TEMP. COEFF. SZ (%/K) at IZ(2) DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C 3 MAX. VR (V) 450 50 1.0 6.0 450 25 1.0 6.0 20 450 15 1.0 6.0 −0.060 20 450 10 1.0 6.0 2000 ±0.055 20 450 5 1.0 6.0 1900 ±0.030 20 450 5 1.5 6.0 5.1 1600 ±0.030 20 300 5 2.0 6.0 1N5232B 5.6 1600 +0.038 20 300 5 3.0 6.0 1N5233B 6.0 1600 +0.038 20 300 5 3.5 6.0 1N5234B 6.2 1000 +0.045 20 200 5 4.0 6.0 1N5235B 6.8 750 +0.050 20 200 3 5.0 6.0 1N5236B 7.5 500 +0.058 20 150 3 6.0 4.0 1N5237B 8.2 500 +0.062 20 150 3 6.5 4.0 1N5238B 8.7 600 +0.065 20 150 3 6.5 3.5 1N5239B 9.1 600 +0.068 20 150 3 7.0 3.0 600 +0.075 20 90 3 8.0 3.0 NOM. MAX. MAX. 1N5225B 3.0 1600 −0.075 20 1N5226B 3.3 1600 −0.070 20 1N5227B 3.6 1700 −0.065 1N5228B 3.9 1900 1N5229B 4.3 1N5230B 4.7 1N5231B 1N5240B 10 MAX. MAX. 600 +0.076 20 85 2 8.4 2.5 12 600 +0.077 20 85 1 9.1 2.5 1N5243B 13 600 +0.079 9.5 80 0.5 9.9 2.5 1N5244B 14 600 +0.082 9.0 80 0.1 10.0 2.0 1N5245B 15 600 +0.082 8.5 75 0.1 11.0 2.0 1N5246B 16 600 +0.083 7.8 75 0.1 12.0 1.5 1N5247B 17 600 +0.084 7.4 75 0.1 13.0 1.5 1N5248B 18 600 +0.085 7.0 70 0.1 14.0 1.5 1N5249B 19 600 +0.086 6.6 70 0.1 14.0 1.5 1N5250B 20 600 +0.086 6.2 60 0.1 15.0 1.5 Product specification 11 1N5242B 1N5225B to 1N5267B 1N5241B Philips Semiconductors TYPE No. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest Voltage regulator diodes 1996 Apr 26 Per type Tj = 25 °C; unless otherwise specified. MAX. MAX. DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. MAX. VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 4 1N5251B 22 600 +0.087 5.6 60 0.1 17.0 1.25 1N5252B 24 600 +0.088 5.2 55 0.1 18.0 1.25 1N5253B 25 600 +0.089 5.0 55 0.1 19.0 1.25 1N5254B 27 600 +0.090 4.6 50 0.1 21.0 1.0 1N5255B 28 600 +0.091 4.5 50 0.1 21.0 1.0 1N5256B 30 600 +0.091 4.2 50 0.1 23.0 1.0 1N5257B 33 700 +0.092 3.8 45 0.1 25.0 0.9 1N5258B 36 700 +0.093 3.4 45 0.1 27.0 0.8 1N5259B 39 800 +0.094 3.2 45 0.1 30.0 0.7 1N5260B 43 900 +0.095 3.0 40 0.1 33.0 0.6 1N5261B 47 1000 +0.095 2.7 40 0.1 36.0 0.5 1N5262B 51 1100 +0.096 2.5 40 0.1 39.0 0.4 1N5263B 56 1300 +0.096 2.2 40 0.1 43.0 0.3 1N5264B 60 1400 +0.097 2.1 40 0.1 46.0 0.3 1N5265B 62 1400 +0.097 2.0 35 0.1 47.0 0.3 1N5266B 68 1600 +0.097 1.8 35 0.1 52.0 0.25 1N5267B 75 1700 +0.098 1.7 35 0.1 56.0 0.2 Philips Semiconductors NOM. TEMP. COEFF. SZ (%/K) at IZ(2) Voltage regulator diodes 1996 Apr 26 TYPE No. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest Notes 2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C. Product specification 1N5225B to 1N5267B 1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. Philips Semiconductors Product specification Voltage regulator diodes 1N5225B to 1N5267B THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Apr 26 5 Philips Semiconductors Product specification Voltage regulator diodes 1N5225B to 1N5267B GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp δ= T 1 10−1 1 102 10 103 104 tp T tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. MBG803 MBG801 103 handbook, halfpage 250 handbook, halfpage PZSM (W) IF (mA) 102 125 (1) 10 (2) 1 10−1 1 duration (ms) 0 0.5 10 0.75 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 1996 Apr 26 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 6 Forward current as a function of forward voltage; typical values. Philips Semiconductors Product specification Voltage regulator diodes 1N5225B to 1N5267B PACKAGE OUTLINE ndbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Fig.5 SOD27 (DO-35). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 7