ETC BZX84

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX84 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 18
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
• Total power dissipation:
max. 250 mW
• Three tolerance series: ±1%, ±2%
and approx. ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
BZX84 series
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• General regulation functions.
handbook, halfpage
2
1
2
n.c.
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The diodes are available in the
normalized E24 ±1% (BZX84-A), ±2%
(BZX84-B) and approx. ±5%
(BZX84-C) tolerance range.
The series consists of 37 types with
nominal working voltages from
2.4 to 75 V.
1999 May 18
1
3
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
MARKING
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4
Z11
BZX84-C6V2
Z4∗
BZX84-C16
Y5∗
BZX84-C43
Y15
BZX84-C2V7
Z12
BZX84-C6V8
Z5∗
BZX84-C18
Y6∗
BZX84-C47
Y16
BZX84-C3V0
Z13
BZX84-C7V5
Z6∗
BZX84-C20
Y7∗
BZX84-C51
Y17
BZX84-C3V3
Z14
BZX84-C8V2
Z7∗
BZX84-C22
Y8∗
BZX84-C56
Y18
BZX84-C3V6
Z15
BZX84-C9V1
Z8∗
BZX84-C24
Y9∗
BZX84-C62
Y19
BZX84-C3V9
Z16
BZX84-C10
Z9∗
BZX84-C27
Y10
BZX84-C68
Y20
BZX84-C4V3
Z17
BZX84-C11
Y1∗
BZX84-C30
Y11
BZX84-C75
Y21
BZX84-C4V7
Z1∗
BZX84-C12
Y2∗
BZX84-C33
Y12
−
−
BZX84-C5V1
Z2∗
BZX84-C13
Y3∗
BZX84-C36
Y13
−
−
BZX84-C5V6
Z3∗
BZX84-C15
Y4∗
BZX84-C39
Y14
−
−
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4
Z50
BZX84-B6V2
Z60
BZX84--B16
Z70
BZX84-B43
Z80
BZX84-B2V7
Z51
BZX84-B6V8
Z61
BZX84-B18
Z71
BZX84-B47
Z81
BZX84-B3V0
Z52
BZX84-B7V5
Z62
BZX84-B20
Z72
BZX84-B51
Z82
BZX84-B3V3
Z53
BZX84-B8V2
Z63
BZX84-B22
Z73
BZX84-B56
Z83
BZX84-B3V6
Z54
BZX84-B9V1
Z64
BZX84-B24
Z74
BZX84-B62
Z84
BZX84-B3V9
Z55
BZX84-B10
Z65
BZX84-B27
Z75
BZX84-B68
Z85
BZX84-B4V3
Z56
BZX84-B11
Z66
BZX84-B30
Z76
BZX84-B75
Z86
BZX84-B4V7
Z57
BZX84-B12
Z67
BZX84-B33
Z77
−
−
BZX84-B5V1
Z58
BZX84-B13
Z68
BZX84-B36
Z78
−
−
BZX84-B5V6
Z59
BZX84-B15
Z69
BZX84-B39
Z79
−
−
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4
Y50
BZX84-A6V2
Y60
BZX84-A16
Y70
BZX84-A43
Y80
BZX84-A2V7
Y51
BZX84-A6V8
Y61
BZX84-A18
Y71
BZX84-A47
Y81
BZX84-A3V0
Y52
BZX84-A7V5
Y62
BZX84-A20
Y72
BZX84-A51
Y82
BZX84-A3V3
Y53
BZX84-A8V2
Y63
BZX84-A22
Y73
BZX84-A56
Y83
BZX84-A3V6
Y54
BZX84-A9V1
Y64
BZX84-A24
Y74
BZX84-A62
Y84
BZX84-A3V9
Y55
BZX84-A10
Y65
BZX84-A27
Y75
BZX84-A68
Y85
BZX84-A4V3
Y56
BZX84-A11
Y66
BZX84-A30
Y76
BZX84-A75
Y86
BZX84-A4V7
Y57
BZX84-A12
Y67
BZX84-A33
Y77
−
−
BZX84-A5V1
Y58
BZX84-A13
Y68
BZX84-A36
Y78
−
−
BZX84-A5V6
Y59
BZX84-A15
Y69
BZX84-A39
Y79
−
−
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1999 May 18
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
−
IZSM
non-repetitive peak reverse current tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Tables
1 and 2
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
250
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.2
−
40
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
200
mA
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
1999 May 18
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.3
0.9
V
BZX84-A/B/C2V4
VR = 1 V
50
µA
BZX84-A/B/C2V7
VR = 1 V
20
µA
BZX84-A/B/C3V0
VR = 1 V
10
µA
BZX84-A/B/C3V3
VR = 1 V
5
µA
BZX84-A/B/C3V6
VR = 1 V
5
µA
BZX84-A/B/C3V9
VR = 1 V
3
µA
BZX84-A/B/C4V3
VR = 1 V
3
µA
BZX84-A/B/C4V7
VR = 2 V
3
µA
BZX84-A/B/C5V1
VR = 2 V
2
µA
BZX84-A/B/C5V6
VR = 2 V
1
µA
BZX84-A/B/C6V2
VR = 4 V
3
µA
BZX84-A/B/C6V8
VR = 4 V
2
µA
BZX84-A/B/C7V5
VR = 5 V
1
µA
BZX84-A/B/C8V2
VR = 5 V
700
nA
BZX84-A/B/C9V1
VR = 6 V
500
nA
BZX84-A/B/C10
VR = 7 V
200
nA
BZX84-A/B/C11
VR = 8 V
100
nA
BZX84-A/B/C12
VR = 8 V
100
nA
BZX84-A/B/C13
VR = 8 V
100
nA
BZX84-A/B/C15 to 75
VR = 0.7VZnom
50
nA
4
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
Cd (pF)
PEAK REVERSE
at f = 1 MHz;
CURRENT
VR = 0 V
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
5
Tol. approx.
±5% (C)
at
at
IZtest = 1 mA IZtest = 5 mA
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
TYP. MAX. TYP. MAX.
MIN.
TYP.
MAX.
MAX.
2V4
2.37
2.43
2.35
2.45
2.2
2.6
275
600
70
100
−3.5
−1.6
0
450
6.0
2V7
2.67
2.73
2.65
2.75
2.5
2.9
300
600
75
100
−3.5
−2.0
0
450
6.0
3V0
2.97
3.03
2.94
3.06
2.8
3.2
325
600
80
95
−3.5
−2.1
0
450
6.0
3V3
3.26
3.34
3.23
3.37
3.1
3.5
350
600
85
95
−3.5
−2.4
0
450
6.0
3V6
3.56
3.64
3.53
3.67
3.4
3.8
375
600
85
90
−3.5
−2.4
0
450
6.0
3V9
3.86
3.94
3.82
3.98
3.7
4.1
400
600
85
90
−3.5
−2.5
0
450
6.0
4V3
4.25
4.35
4.21
4.39
4.0
4.6
410
600
80
90
−3.5
−2.5
0
450
6.0
4V7
4.65
4.75
4.61
4.79
4.4
5.0
425
500
50
80
−3.5
−1.4
0.2
300
6.0
5V1
5.04
5.16
5.00
5.20
4.8
5.4
400
480
40
60
−2.7
−0.8
1.2
300
6.0
5V6
5.54
5.66
5.49
5.71
5.2
6.0
80
400
15
40
−2.0
1.2
2.5
300
6.0
6V2
6.13
6.27
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.73
6.87
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.42
7.58
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.11
8.29
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
9.00
9.20
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.90
10.10
9.80
10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80
11.11
10.80
11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.88
12.12
11.80
12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.87
13.13
12.70
13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.85
15.15
14.70
15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.84
16.16
15.70
16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.82
18.18
17.60
18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.80
20.20
19.60
20.40
18.8
21.2
60
225
15
55
14.4
16.4
18.0
60
1.5
22
21.78
22.22
21.60
22.40
20.8
23.3
60
250
20
55
16.4
18.4
20.0
60
1.25
24
23.76
24.24
23.50
24.50
22.8
25.6
60
250
25
70
18.4
20.4
22.0
55
1.25
MAX.
Product specification
Tol. ±2% (B)
BZX84 series
Tol. ±1% (A)
Philips Semiconductors
BZX84-A
or B or C
XXX
DIFFERENTIAL
RESISTANCE
rdif (Ω)
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
1999 May 18
Table 1 Per type BZX84-A/B/C2V4 to A/B/C24
Tj = 25 °C unless otherwise specified.
TEMP. COEFF.
DIODE CAP. NON-REPETITIVE
SZ (mV/K)
Cd (pF)
PEAK REVERSE
at IZtest = 2 mA
at f = 1 MHz;
CURRENT
(see Figs 4 and 5)
VR = 0 V
IZSM (A)
at tp = 100 µ;
Tamb = 25 °C
6
Tol. ±1% (A)
Tol. ±2% (B)
Tol. approx.
±5% (C)
at
IZtest = 0.5 m
A
at
IZtest = 2 mA
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
27
26.73
27.27
26.50
27.50
25.1
28.9
65
300
25
80
21.4
23.4
25.3
50
1.0
30
29.70
30.30
29.40
30.60
28.0
32.0
70
300
30
80
24.4
26.6
29.4
50
1.0
33
32.67
33.33
32.30
33.70
31.0
35.0
75
325
35
80
27.4
29.7
33.4
45
0.9
36
35.64
36.36
35.30
36.70
34.0
38.0
80
350
35
90
30.4
33.0
37.4
45
0.8
39
38.61
39.39
38.20
39.80
37.0
41.0
80
350
40
130
33.4
36.4
41.2
45
0.7
43
42.57
43.43
42.10
43.90
40.0
46.0
85
375
45
150
37.6
41.2
46.6
40
0.6
47
46.53
47.47
46.10
47.90
44.0
50.0
85
375
50
170
42.0
46.1
51.8
40
0.5
51
50.49
51.51
50.00
52.00
48.0
54.0
90
400
60
180
46.6
51.0
57.2
40
0.4
56
55.44
56.56
54.90
57.10
52.0
60.0
100
425
70
200
52.2
57.0
63.8
40
0.3
62
61.38
62.62
60.80
63.20
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
67.32
68.68
66.60
69.40
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
74.25
75.75
73.50
76.50
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
MAX. MIN. TYP. MAX.
MAX.
MAX.
Philips Semiconductors
BZX84-A
or B or C
XXX
DIFFERENTIAL
RESISTANCE
rdif (Ω)
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
1999 May 18
Table 2 Per type BZX84-A/B/C27 to A/B/C75
Tj = 25 °C unless otherwise specified.
Product specification
BZX84 series
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed circuit-board.
1999 May 18
7
VALUE
UNIT
330
K/W
500
K/W
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
GRAPHICAL DATA
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
0.8
VF (V)
1.0
Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
0
20
40
IZ (mA)
−5
60
0
4
8
BZX84-A/B/C2V4 to A/B/C4V3.
Tj = 25 to 150 °C.
BZX84-A/B/C4V7 to A/B/C12.
Tj = 25 to 150 °C.
Fig.4
Fig.5
Temperature coefficient as a function of
working current; typical values.
1999 May 18
8
12
16
IZ (mA)
20
Temperature coefficient as a function of
working current; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 May 18
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 18
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX84 series
NOTES
1999 May 18
11
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254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 18
Document order number:
9397 750 05931