DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBZ5226B to PMBZ5257B Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES PMBZ5226B to PMBZ5257B PINNING • Total power dissipation: max. 250 mW PIN • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 75 V DESCRIPTION 1 anode 2 not connected 3 cathode • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 2 APPLICATIONS 1 • General regulation functions. 2 n.c. 1 DESCRIPTION 3 Low-power voltage regulator diodes in small SOT23 plastic SMD packages. 3 Top view The series consists of 32 types with nominal working voltages from 3.3 to 75 V. MAM243 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE PMBZ5226B ∗8A PMBZ5234B ∗8J PMBZ5242B ∗8S PMBZ5250B 81A PMBZ5227B ∗8B PMBZ5235B ∗8K PMBZ5243B ∗8T PMBZ5251B 81B PMBZ5228B ∗8C PMBZ5236B ∗8L PMBZ5244B ∗8U PMBZ5252B 81C PMBZ5229B ∗8D PMBZ5237B ∗8M PMBZ5245B ∗8V PMBZ5253B 81D PMBZ5230B ∗8E PMBZ5238B ∗8N PMBZ5246B ∗8W PMBZ5254B 81E PMBZ5231B ∗8F PMBZ5239B ∗8P PMBZ5247B ∗8X PMBZ5255B 81F PMBZ5232B ∗8G PMBZ5240B ∗8Q PMBZ5248B ∗8Y PMBZ5256B 81G PMBZ5233B ∗8H PMBZ5241B ∗8R PMBZ5249B ∗8Z PMBZ5257B 81H Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. 1999 May 17 2 Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. IF continuous forward current − IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge see Table “Per type” Ptot total power dissipation PZSM non-repetitive peak reverse power dissipation Tstg Tj MAX. UNIT 200 mA Tamb = 25 °C; note 1 − 300 mW Tamb = 25 °C; note 2 − 250 mW tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 − 40 W storage temperature −65 +150 °C junction temperature − 150 °C Notes 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage 1999 May 17 CONDITIONS IF = 200 mA; see Fig.3 3 MAX. UNIT 1.1 V NOM. MAX. TYP. DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 4 1600 −0.064 20 450 25 1.0 6.0 PMBZ5227B 3.6 1700 −0.065 20 450 15 1.0 6.0 PMBZ5228B 3.9 1900 −0.063 20 450 10 1.0 6.0 PMBZ5229B 4.3 2000 −0.058 20 450 5 1.0 6.0 PMBZ5230B 4.7 2000 −0.047 20 450 5 1.0 6.0 PMBZ5231B 5.1 2000 −0.013 20 300 5 2.0 6.0 PMBZ5232B 5.6 1600 +0.023 20 300 5 3.0 6.0 PMBZ5233B 6.0 1600 +0.023 20 300 5 3.5 6.0 PMBZ5234B 6.2 1000 +0.039 20 200 5 4.0 6.0 PMBZ5235B 6.8 750 +0.040 20 200 3 5.0 6.0 PMBZ5236B 7.5 500 +0.047 20 150 3 6.0 4.0 PMBZ5237B 8.2 500 +0.052 20 150 3 6.5 4.0 PMBZ5238B 8.7 600 +0.053 20 150 3 6.5 3.5 PMBZ5239B 9.1 600 +0.055 20 150 3 7.0 3.0 10 600 +0.055 20 90 3 8.0 3.0 PMBZ5241B 11 600 +0.058 20 85 2 8.4 2.5 PMBZ5242B 12 600 +0.062 20 85 1 9.1 2.5 PMBZ5243B 13 600 +0.065 9.5 80 0.5 9.9 2.5 PMBZ5244B 14 600 +0.067 9.0 80 0.1 10 2.0 PMBZ5245B 15 600 +0.073 8.5 75 0.1 11 2.0 PMBZ5246B 16 600 +0.073 7.8 75 0.1 12 1.5 PMBZ5247B 17 600 +0.073 7.4 75 0.1 13 1.5 PMBZ5248B 18 600 +0.078 7.0 70 0.1 14 1.5 PMBZ5249B 19 600 +0.078 6.6 70 0.1 14 1.5 PMBZ5250B 20 600 +0.080 6.2 60 0.1 15 1.5 PMBZ5251B 22 600 +0.080 5.6 60 0.1 17 1.25 PMBZ5240B Product specification 3.3 PMBZ5226B to PMBZ5257B PMBZ5226B Philips Semiconductors TYPE No. TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE rdif (Ω) at IZ(2) IZtest (mA) VZ (V)(1) at IZtest at IZ = 0.25 mA Voltage regulator diodes 1999 May 17 Per type Tj = 25 °C unless otherwise specified. MAX. TYP. REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MAX. MAX. VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. PMBZ5252B 24 600 +0.081 5.2 55 0.1 18 1.25 PMBZ5253B 25 600 +0.082 5.0 55 0.1 19 1.25 PMBZ5254B 27 600 +0.085 4.6 50 0.1 21 1.0 PMBZ5255B 28 600 +0.085 4.5 50 0.1 21 1.0 PMBZ5256B 30 600 +0.085 4.2 50 0.1 23 1.0 PMBZ5257B 33 700 +0.085 3.8 45 0.1 25 0.9 Philips Semiconductors NOM. DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V Voltage regulator diodes 1999 May 17 TYPE No. TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE at IZ(2) rdif (Ω) IZtest (mA) VZ (V)(1) at IZ = 0.25 mA at IZtest Notes 1. VZ is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C. 5 Product specification PMBZ5226B to PMBZ5257B Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 330 K/W 500 K/W Note 1. Device mounted on a printed-circuit board. GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 1999 May 17 Fig.3 6 Forward current as a function of forward voltage; typical values. Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 17 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 17 8 Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B NOTES 1999 May 17 9 Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B NOTES 1999 May 17 10 Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B NOTES 1999 May 17 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp12 Date of release: 1999 May 17 Document order number: 9397 750 05922