BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. 3 Cathode Specification Features • • • • • • • http://onsemi.com 1 Anode 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) Pb−Free Packages are Available 3 1 2 SOT−23 CASE 318 STYLE 8 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 xxx M G G 1 MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C RqJA PD Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BZX84CxxxET1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel BZX84CxxxET1G BZX84CxxxET3 BZX84CxxxET3G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2009 July, 2009 − Rev. 6 1 Publication Order Number: BZX84C2V4ET1/D BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Symbol Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF Parameter VZ QVZ I VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator http://onsemi.com 2 V BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (V) @ IZT1 = 5 mA (Note 4) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4ET1, G BA1 2.2 2.4 2.6 BZX84C2V7ET1, G BA2 2.5 2.7 2.9 BZX84C3V0ET1, G BA3 2.8 3.0 BZX84C3V3ET1, G BA4 3.1 BZX84C3V6ET1, G BA5 BZX84C3V9ET1, G VZ2 (V) @ IZT2 = 1 mA (Note 4) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.4 3.6 3.8 BA6 3.7 3.9 BZX84C4V3ET1, G BA7 4.0 BZX84C4V7ET1, G BA9 4.4 BZX84C5V1ET1, G BB1 BZX84C5V6ET1, G VZ3 (V) @ IZT3=20 mA (Note 4) Max Reverse Leakage Current qVZ C (pF) (mV/k) @ @ IZT1=5 mA VR = 0 f= Min Max 1 MHz Min Max ZZT3 (W) @ IZT3= 20 mA 600 2.6 3.2 50 50 1.0 −3.5 0 450 600 3.0 3.6 50 20 1.0 −3.5 0 450 2.7 600 3.3 3.9 50 10 1.0 −3.5 0 450 2.3 2.9 600 3.6 4.2 40 5.0 1.0 −3.5 0 450 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 −3.5 0 450 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 −3.5 −2.5 450 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 −3.5 0 450 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 −3.5 0.2 260 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 −2.7 1.2 225 BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 −2 2.5 200 BZX84C6V2ET1, G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185 BZX84C6V8ET1, G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155 BZX84C7V5ET1, G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140 BZX84C8V2ET1, G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135 BZX84C9V1ET1, G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130 BZX84C10ET1, G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130 BZX84C11ET1, G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130 BZX84C12ET1, G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130 BZX84C13ET1, G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120 BZX84C15ET1, G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110 BZX84C16ET1, G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105 BZX84C18ET1, G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100 BZX84C20ET1, G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85 BZX84C22ET1, G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85 BZX84C24ET1, G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80 Device* VZ2 Below @ IZT2 = 0.1 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27ET1, G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 BZX84C30ET1 BD1 28 30 32 80 27.8 32 300 28.1 BZX84C33ET1, G BD2 31 33 35 80 BZX84C36ET1, G BD3 34 36 38 90 30.8 35 325 33.8 38 350 BZX84C39ET1, G BD4 37 39 41 130 36.7 41 BZX84C43ET1, G BK6 40 43 46 150 39.7 BZX84C47ET1, G BD5 44 47 50 170 BZX84C51ET1, G BD6 48 51 54 BZX84C56ET1, G BD7 52 56 BZX84C62ET1, G BD8 58 BZX84C68ET1, G BD9 64 BZX84C75ET1, G BE1 70 Device Min Max Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA V IR @ R (V) mA Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 32.4 50 0.05 21 24.4 29.4 70 31.1 35.4 55 0.05 23.1 27.4 33.4 70 34.1 38.4 60 0.05 25.2 30.4 37.4 70 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 VZ1 Below @ IZT1 = 2 mA ZZT2 Below @ IZT4 = 0.5 mA V IR @ R (V) mA VZ3 Below @ IZT3 = 10 mA 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 BZX84C2V4ET1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 VZ @ IZT 10 2 1 0 −1 −2 −3 TYPICAL TC VALUES 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 255C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS I R , LEAKAGE CURRENT ( μA) TA = 25°C 1 V BIAS 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 5. Typical Capacitance 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 100 I Z, ZENER CURRENT (mA) 10 0.01 1 0.1 0.01 12 10 30 50 70 VZ, ZENER VOLTAGE (V) PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) PEAK VALUE IRSM @ 8 ms tr 90 TA = 25°C 10 Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) 100 80 Figure 6. Typical Leakage Current TA = 25°C % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) 100 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (ms) Figure 9. 8 × 20 ms Pulse Waveform http://onsemi.com 5 80 90 BZX84C2V4ET1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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