BZX84J series Single Zener diodes Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n Non-repetitive peak reverse power dissipation: ≤ 40 W n Total power dissipation: ≤ 550 mW n Two tolerance series: ±2 % and ±5 % n Wide working voltage range: nominal 2.4 V to 75 V (E24 range) n Low differential resistance n Small plastic package suitable for surface-mounted design 1.3 Applications n General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter forward voltage VF PZSM Conditions IF = 100 mA non-repetitive peak reverse power dissipation [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge Min Typ Max Unit [1] - - 1.1 V [2] - - 40 W 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. BZX84J series NXP Semiconductors Single Zener diodes 3. Ordering information Table 3. Ordering information Type number BZX84J-B2V4 to BZX84J-C75[1] [1] Package Name Description Version SC-90 plastic surface-mounted package; 2 leads SOD323F The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code Type number Marking code Type number Marking code Type number Marking code BZX84J-B2V4 SL BZX84J-B15 SC BZX84J-C2V4 U3 BZX84J-C15 TV BZX84J-B2V7 SM BZX84J-B16 SD BZX84J-C2V7 U4 BZX84J-C16 TW BZX84J-B3V0 ST BZX84J-B18 SE BZX84J-C3V0 U9 BZX84J-C18 TX BZX84J-B3V3 SU BZX84J-B20 SF BZX84J-C3V3 UA BZX84J-C20 TY BZX84J-B3V6 SV BZX84J-B22 SG BZX84J-C3V6 UB BZX84J-C22 TZ BZX84J-B3V9 SW BZX84J-B24 SH BZX84J-C3V9 UC BZX84J-C24 U1 BZX84J-B4V3 SZ BZX84J-B27 SK BZX84J-C4V3 UF BZX84J-C27 U2 BZX84J-B4V7 TA BZX84J-B30 SN BZX84J-C4V7 UG BZX84J-C30 U5 BZX84J-B5V1 TD BZX84J-B33 SP BZX84J-C5V1 UL BZX84J-C33 U6 BZX84J-B5V6 TE BZX84J-B36 SR BZX84J-C5V6 UM BZX84J-C36 U7 BZX84J-B6V2 TH BZX84J-B39 SS BZX84J-C6V2 UR BZX84J-C39 U8 BZX84J-B6V8 TK BZX84J-B43 SX BZX84J-C6V8 US BZX84J-C43 UD BZX84J-B7V5 TM BZX84J-B47 SY BZX84J-C7V5 UU BZX84J-C47 UE BZX84J-B8V2 TN BZX84J-B51 TB BZX84J-C8V2 UV BZX84J-C51 UH BZX84J-B9V1 TP BZX84J-B56 TC BZX84J-C9V1 UW BZX84J-C56 UK BZX84J-B10 S8 BZX84J-B62 TF BZX84J-C10 TR BZX84J-C62 UN BZX84J-B11 S9 BZX84J-B68 TG BZX84J-C11 TS BZX84J-C68 UP BZX84J-B12 SA BZX84J-B75 TL BZX84J-C12 TT BZX84J-C75 UT BZX84J-B13 SB - - BZX84J-C13 TU - - BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 2 of 12 BZX84J series NXP Semiconductors Single Zener diodes 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IF forward current Min Max Unit mA - 250 - see Table 8 and 9 IZSM non-repetitive peak reverse current [1] PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation [2] - 550 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Tamb ≤ 25 °C [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point in free air Min Typ Max Unit [1] - - 230 K/W [2] - - 55 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Soldering point of cathode tab. 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol VF [1] Parameter Conditions Min Typ Max Unit IF = 10 mA - - 0.9 V IF = 100 mA - - 1.1 V [1] forward voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 3 of 12 BZX84J series NXP Semiconductors Single Zener diodes Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24 Tj = 25 °C unless otherwise specified. BZX84J Sel -xxx Working voltage Differential resistance Reverse current Temperature coefficient VZ (V) rdif (Ω) IR (µA) SZ (mV/K) Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 IZ = 5 mA IZ = 1 mA IZ = 5 mA Min Max Max Max Max VR (V) Min B 2.35 2.45 400 100 50 1 C 2.2 2.6 450 100 20 500 95 500 B 2.65 2.75 C 2.5 2.9 B 2.94 3.06 C 2.8 3.2 B 3.23 3.37 C 3.1 3.5 B 3.53 3.67 C 3.4 3.8 B 3.82 3.98 C 3.7 4.1 B 4.21 4.39 C 4 4.6 B 4.61 4.79 C 4.4 5 B 5 5.2 C 4.8 5.4 B 5.49 5.71 C 5.2 6 B 6.08 6.32 C 5.8 6.6 B 6.66 6.94 C 6.4 7.2 B 7.35 7.65 C 7 7.9 B 8.04 8.36 C 7.7 8.7 B 8.92 9.28 C 8.5 9.6 B 9.8 10.2 C 9.4 10.6 B 10.8 11.2 C 10.4 11.6 B 11.8 12.2 C 11.4 12.7 IZ = 5 mA Max Max Max −3.5 0 450 12 1 −3.5 0 440 12 10 1 −3.5 0 425 12 95 5 1 −3.5 0 410 12 500 90 5 1 −3.5 0 390 12 500 90 3 1 −3.5 0 370 12 600 90 3 1 −3.5 0 350 12 500 80 3 2 −3.5 0.2 325 12 480 60 2 2 −2.7 1.2 300 12 400 40 1 2 −2 2.5 275 12 150 10 3 4 0.4 3.7 250 12 80 15 2 4 1.2 4.5 215 12 80 10 1 5 2.5 5.3 170 4 80 10 0.7 5 3.2 6.2 150 4 100 10 0.5 6 3.8 7 120 3 150 10 0.2 7 4.5 8 110 3 150 10 0.1 8 5.4 9 108 2.5 150 10 0.1 8 6 10 105 2.5 BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 4 of 12 BZX84J series NXP Semiconductors Single Zener diodes Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continued Tj = 25 °C unless otherwise specified. BZX84J Sel -xxx Working voltage Differential resistance Reverse current Temperature coefficient VZ (V) rdif (Ω) IR (µA) SZ (mV/K) Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] 13 15 16 18 20 22 24 IZ = 5 mA IZ = 1 mA IZ = 5 mA Min Max Max Max Max VR (V) Min Max Max Max 170 10 0.1 8 7 11 103 2.5 200 15 0.05 10.5 9.2 13 99 2 200 20 0.05 11.2 10.4 14 97 1.5 225 20 0.05 12.6 12.4 16 93 1.5 225 20 0.05 14 14.4 18 88 1.5 250 25 0.05 15.4 16.4 20 84 1.25 250 30 0.05 16.8 18.4 22 80 1.25 B 12.7 13.3 C 12.4 14.1 B 14.7 15.3 C 13.8 15.6 B 15.7 16.3 C 15.3 17.1 B 17.6 18.4 C 16.8 19.1 B 19.6 20.4 C 18.8 21.2 B 21.6 22.4 C 20.8 23.3 B 23.5 24.5 C 22.8 25.6 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge IZ = 5 mA BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 5 of 12 BZX84J series NXP Semiconductors Single Zener diodes Table 9. Characteristics per type; BZX84J-B27 to BZX84J-C75 Tj = 25 °C unless otherwise specified. BZX84J- Sel xxx Working voltage Differential resistance Reverse current Temperature coefficient VZ (V) rdif (Ω) IR (µA) SZ (mV/K) Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] 27 30 33 36 39 43 47 51 56 62 68 75 IZ = 2 mA IZ = 0.5 mA IZ = 2 mA Min Max Max Max Max VR (V) Min Max Max Max B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 73 1 C 25.1 28.9 250 40 0.05 21 24.4 29.4 66 1 275 40 0.05 23.1 27.4 33.4 60 0.9 300 60 0.05 25.2 30.4 37.4 59 0.8 300 75 0.05 27.3 33.4 41.2 58 0.7 325 80 0.05 30.1 37.6 46.6 56 0.6 325 90 0.05 32.9 42 51.8 55 0.5 350 110 0.05 35.7 46.6 57.2 52 0.4 375 120 0.05 39.2 52.2 63.8 49 0.3 400 140 0.05 43.4 58.8 71.6 44 0.3 400 160 0.05 47.6 65.6 79.8 40 0.25 400 175 0.05 52.5 73.4 88.6 35 0.2 B 29.4 30.6 C 28 32 B 32.3 33.7 C 31 35 B 35.3 36.7 C 34 38 B 38.2 39.8 C 37 41 B 42.1 43.9 C 40 46 B 46.1 47.9 C 44 50 B 50 52 C 48 54 B 54.9 57.1 C 52 60 B 60.8 63.2 C 58 66 B 66.6 69.4 C 64 72 B 73.5 76.5 C 70 79 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge IZ = 2 mA BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 6 of 12 BZX84J series NXP Semiconductors Single Zener diodes mbg801 103 PZSM (W) mbg781 300 IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 10 tp (ms) (1) Tj = 25 °C (prior to surge) 0 0.6 0.8 1 VF (V) Tj = 25 °C (2) Tj = 150 °C (prior to surge) Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mld444 0.5 SZ (mV/K) Fig 2. Forward current as a function of forward voltage; typical values mld445 12 15 SZ (mV/K) 4V7 13 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 0 8 4V3 −0.5 2V4 4 2V7 3V9 −1 3V6 −1.5 −2 10−1 0 3V3 3V0 1 102 10 −4 10−1 1 IZ (mA) BZX84J-B/C2V4 to BZX84J-B/C4V7 BZX84J-B/C5V1 to BZX84J-B/C15 Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C Fig 3. Temperature coefficient as a function of working current; typical values Fig 4. Temperature coefficient as a function of working current; typical values BZX84J_SER_1 Product data sheet 102 10 IZ (mA) © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 7 of 12 BZX84J series NXP Semiconductors Single Zener diodes 006aaa996 50 VZ(nom) (V) = 2.7 IZ (mA) 3.3 3.9 40 4.7 5.6 6.8 12 20 8.2 006aaa997 30 VZ(nom) (V) = 10 IZ (mA) 25 30 15 15 20 10 18 10 22 27 33 36 5 0 0 0 2 4 6 8 10 0 10 20 30 40 VZ (V) VZ (V) Tj = 25 °C Tj = 25 °C BZX84J-B/C2V7 to BZX84J-B/C8V2 BZX84J-B/C10 to BZX84J-B/C36 All curves have a test current IZ = 5 mA. For the curves VZ(nom) = (10, 12, 15, 18, 22) V the test current IZ = 5 mA. For the curves VZ(nom) = (27, 33, 36) V the test current IZ = 2 mA. Fig 5. Working current as a function of working voltage; typical values Fig 6. Working current as a function of working voltage; typical values BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 8 of 12 BZX84J series NXP Semiconductors Single Zener diodes 8. Package outline 1.35 1.15 0.80 0.65 0.5 0.3 1 2.7 2.3 1.8 1.6 2 0.25 0.10 0.40 0.25 Dimensions in mm 04-09-13 Fig 7. Package outline SOD323F (SC-90) 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package BZX84J-B2V4 to SOD323F BZX84J-C75 [1] Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 13. 10. Soldering 3.05 2.80 2.10 1.60 solder lands solder resist 1.65 0.95 0.50 0.60 occupied area solder paste 0.50 (2×) msa433 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 8. Reflow soldering footprint SOD323F (SC-90) BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 9 of 12 BZX84J series NXP Semiconductors Single Zener diodes 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BZX84J_SER_1 20070301 Product data sheet - - BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 10 of 12 BZX84J series NXP Semiconductors Single Zener diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BZX84J_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 1 March 2007 11 of 12 BZX84J series NXP Semiconductors Single Zener diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 March 2007 Document identifier: BZX84J_SER_1