INVERTER THYRISTOR C771 77mm / 2800V / 100us Type C771 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially available heat dissipators and mechanical clamping hardware. MODEL ON-STATE CHARACTERISTIC C771LS C771LM C771LE C771LD C771LC C771LB C771LA C771L On-State Current. It, (A) 30000 10000 1000 process maximum Tj = 125 C 100 0 1 2 3 VDRM / VRRM 0 to +125oC volts 2800 2700 2600 2500 2400 2300 2200 2100 4 5 6 7 8 @ -40oC 2700 2600 2500 2400 2300 2200 2100 2000 Gate Drive Requirements: 20 - 30V / 10 ohms / 0.5us risetime 10 - 20 us minimum duration External Clamping Force 7000 - 9000 lbs. 31.1 - 40.0 kN On-State Voltage, Vt (V) THERMAL IMPEDANCE MECHANICAL OUTLINE J CL THERMAL IMPEDANCE vs. ON-TIME .02 Zthj-c (deg C/W) CL 20° ±5° .01 A Ø .001 B Ø Rthj-case(dc) = .012 degC/watt .0001 D B Ø .00001 0.1 1 10 100 On-Time (milliseconds) 1000 10000 AΦ = 4.35 in (110.5 mm) BΦ= 2.88 in (73.2 mm) D= 1.45 in (36.8 mm) SILICON POWER CORPORATION 175 GREAT VALLEY PKWY. MALVERN, PA 19355 USA SPEC2: 7/31/96 C771 / 6RT215 SPCO LIMITING CHARACTERISTICS TEST CONDITIONS LIMIT UNITS TJ = -40 to +125oC up to 2800V volts PARAMETER SYMBOL Repetitive peak offstate & reverse voltage VDRM/VRRM Off-state & reverse current IDM/IRM Peak half cycle non-repetitive surge current ITSM 60Hz (8.3ms 50Hz (10ms) On-state voltage VTM Critical rate of rise of on-state current di/dtrep Critical rate of rise of off-state voltage Peak recovery current Non-Repetitive Half-Cycle Peak Surge Current & I2t 60 Itsm (kA) I2t (amp-sq-sec) 52 Tj = 125oC 150 @ VDRM/VRRM code LE @ 80% VDRM/VRRM codes LM & LS ma 50 5E6 4.5 32.5 30 kA) 40 4E6 IT = 2000A tP = 8.3ms TJ = 125oC 1.74 volts 30 303E6 VD = 60%VDRM 60Hz Tj=125oC see gate drive 300 A/us dv/dt VDCRIT = 80%VDRM Tj = 125oC 500 v/us IRM TJ = 125oC @ 10A/us @ 50A/us @ 100 A/us 130 450 750 A 2.03 2E6 20 10 1 Circuit commutated turn-off time tQ 400V/us to 80% VDRM Vr = > 50 V 100 3 5 10 Pulse Width - milliseconds us ON-STATE ENERGY Half Sine Pulses ON-STATE ENERGY Trapezoidal Wave di/dt = 100 A/us pulse width Energy per Pulse (joules) 200 100 pulse width Energy per Pulse (joules) (us) 300 (us) 9000 200 9000 7000 5000 7000 5000 100 2000 2000 1000 1000 750 10 750 500 10 500 250 250 1 92I: 3 4 5 6 Peak Current (kA) 1 7 3 4 6 5 Peak Current, It (kA) 7 92I: spec2: 7/31/96