COMCHIP CDBM220L-G

COMCHIP
Low V F SMD Sch ottky Bar rier Rect ifier s
SMD Diodes Specialist
CDBM220L-G Thru. CDBM240L-G
Reverse Voltage: 20 to 40 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
Mini SMA
-Ideal for surface mount applications.
0.154(3.9)
0.138(3.5)
-Easy pick and place.
0.012(0.3) Typ.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.071(1.8)
0.055(1.4)
-Exceeds environmental standard MIL-S19500/228.
-Low leakage current.
0.126(3.2)
0.110(2.8)
Mechanical data
-Case: Mini SMA/SOD-123, molded plastic.
0.067(1.7)
0.051(1.3)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.035(0.9) Typ.
0.035(0.9) Typ.
-Polarity: Color band denotes cathode end.
Dimensions in inches and (millimeter)
-Approx. weight: 0.04 grams
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CDBM220L-G
CDBM240L-G
Units
V RRM
20
40
V
VR
20
40
V
Max. RMS voltage
V RMS
14
28
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
I FSM
50
A
Max. average forward current
IO
2.0
A
Max. instantaneous forward voltage at
2.0A
VF
Max. DC reverse current at T A =25 OC
V RRM
T A =100 OC
IR
1.0
10
RθJA
70
CJ
160
T STG
-55 to +150
O
C
TJ
-55 to +125
O
C
Max. repetitive peak reverse voltage
Continuous reverse voltage
Max. thermal resistance, junction to
ambient
Diode junction capacitance
Storage temperature
Operating temperature
0.38
0.40
V
mA
O
C/W
pF
REV:A
Page 1
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Comchip Technology CO., LTD.
COMCHIP
Low V F SMD Sch ottky Bar rier Rect ifier s
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBM220L-G thru CDBM240L-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
10
10
F o r w a rd C u rren t (A)
100
R e v e r s e C u r rent (mA)
100
1
O
T J =75 C
C
D
BM
22
0L
-G
C
D
BM
24
0L
-G
1
0.1
0.1
T J =25 OC, Pulse
width=300μs
O
T J =25 C
0.01
0
20
40
60
80
100
120
0.01
0.1
140
0.3
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
0.7
0.9
1.1
1.3
1.5
Fig.4 Current Derating Curve
350
2.8
Average Forward Current (A)
T J =25 OC
f=1MHz and applied
4VDC reverse voltage
300
J u n c ti o n C apaci t ance (p F )
0.5
Forward Voltage (V)
250
200
150
100
2.4
2.0
1.6
1.2
0.8
0.4
50
0
0.01
0
0.1
1
10
100
0
25
50
75
100
125
150
175
Ambient Temperature ( OC)
Reverse Voltage (V)
Fig.5 Non-repetitive Forward Surge
Current
60
P e a k F o r w a r d S u r g e Cur r e n t (A )
O
T J =25 C
8.3ms single half sine
wave, JEDEC method
50
40
30
20
10
0
1
10
100
Number of Cycles at 60Hz
REV:A
Page 2
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Comchip Technology CO., LTD.