COMCHIP CDBUR0520

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBUR0520 (RoHs Device)
Io = 500 mA
V R = 20 Volts
0603(1608)
Features
0.071(1.80)
0.063(1.60)
Low forward voltage.
Designed for mounting on small surface.
0.039(1.00)
0.031(0.80)
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
0.033(0.85)
Case: 0603(1608) standard package,
molded plastic.
0.027(0.70)
0.018(0.45) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
0.028(0.70) Typ.
Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Symbol Min Typ Max Unit
V RM
30
V
VR
20
V
IO
0.5
A
I FSM
2
A
Storage temperature
T STG
Junction temperature
Tj
-40
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 100mA
I F = 500mA
VF
0.36
0.47
V
Reverse current
V R = 20V
IR
100
uA
Capacitance between terminals
f = 1 MHz, and 0 VDC reverse voltage
CT
100
pF
REV:A
QW-A1076
Page 1
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBUR0520)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
100m
Reverse current ( A )
C
O
-25
O
25
C
O
7 5 OC
10
C
100
125
Forward current (mA )
1000
10m
O
100 C
1m
O
75 C
100u
O
25 C
10u
1u
1
O
-25 C
0.1u
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
Fig. 3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
120
f=1MHz
O
T a =25 C
Average forward current(%)
Capacitance between terminals ( P F)
20
Reverse voltage (V)
Forward voltage (V)
60
15
10
50
40
30
20
10
100
80
60
40
20
0
0
0
5
10
15
Reverse voltage (V)
20
0
25
50
75
100
125
150
O
Ambient temperature ( C)
REV:A
QW-A1076
Page 2